HITACHI 2SB647

2SB647, 2SB647A
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD667/A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SB647, 2SB647A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SB647
2SB647A
Unit
Collector to base voltage
VCBO
–120
–120
V
Collector to emitter voltage
VCEO
–80
–100
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–1
–1
A
Collector peak current
iC(peak)
–2
–2
A
Collector power dissipation
PC
0.9
0.9
W
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SB647
Item
Symbol Min
Collector to base
breakdown voltage
V(BR)CBO
–120 —
—
–120 —
—
V
I C = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–80
—
—
–100 —
—
V
I C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–5
—
—
–5
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–10
—
—
–10
µA
VCB = –100 V, IE = 0
60
—
320
60
—
200
VCE = –5 V,
I C = –150 mA*2
hFE2
30
—
—
30
—
—
VCE = –5 V,
I C = –500 mA*2
Collector to emitter
saturation voltage
VCE(sat)
—
—
–1
—
—
–1
Base to emitter voltage
VBE
—
—
–1.5 —
—
–1.5 V
Gain bandwidth product
fT
—
140
—
—
140
—
MHz VCE = –5 V, IC = –150 mA
—
20
—
—
20
—
pF
DC current transfer ratio
hFE1*
Collector output capacitance Cob
1
Typ
2SB647A
Max Min
Typ
Notes: 1. The 2SB647 and 2SB647A are grouped by h FE1 as follows.
2. Pulse test
B
C
D
2SB647
60 to 120
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
—
2
Max Unit Test conditions
V
I C = –500 mA,
I B = –50 mA*2
VCE = –5 V,
I C = –150 mA*2
VCB = –10 V, IE = 0
f = 1 MHz
2SB647, 2SB647A
Maximum Collector Dissipation
Curve
Typical Output Characteristics
–1.0
Collector current IC (A)
Collector power dissipation PC (W)
1.2
0.8
0.4
–0.8
–40
–30 20
–
–10
–5
–2
–0.6
–0.4
PC
–0.2
–1
= 0.
9W
–0.5mA
IB = 0
0
50
100
Ambient Tmperature Ta (°C)
0
150
–2
–4
–6
–8
–10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Typical Transfer Characteristics
600
VCE = –5 V
Pulse
–200
–100
–20
–10
25
–25
Ta = 7
5°C
–50
–5
–2
–1
0
–0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
DC current transfer ratio hFE
–500
Collector current IC (mA)
–120
0
–10
–80
–60
500
VCE = –5 V
Pulse
400
300
200
Ta = 75°C
25
–25
100
0
–1
–3
–10 –30 –100 –300 –1,000
Collector Current IC (mA)
3
2SB647, 2SB647A
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
Saturation Voltage
vs. Collector Current
–1.2
–1.0
IC = 10 IB
Pulse
–0.8 VBE(sat) Ta = –25°C
25
75
–0.6
–0.4
–0.2
0
–1
Ta = 75°C
25
–25
VCE(sat)
–3
–10 –30 –100 –300 –1,000
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
VCE = –5 V
200
160
120
80
40
0
–10
4
Collector output capacitance Cob (pF)
Gain bandwidth product fT (MHz)
240
Collector Output Capacitance vs.
Collector to Base Voltage
–30
–100
–300
Collector Current IC (mA)
–1,000
200
100
f = 1 MHz
IE = 0
50
20
10
5
2
–1
–2
–5 –10 –20
–50 –100
Collector to Base Voltage VCB (V)
Unit: mm
4.8 ± 0.3
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.5 ± 0.1
10.1 Min
2.3 Max
8.0 ± 0.5
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
—
Conforms
0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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