HITACHI 2SB1399

2SB1399
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1
12
3
1. Base
2. Collector
3. Emitter
ID
1.0 kΩ
(Typ)
200 Ω
(Typ)
3
2SB1399
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–120
V
Collector to emitter voltage
VCEO
–120
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–10
A
Collector peak current
I C (peak)
–15
A
Collector power dissipation
PC
2
W
PC *
1
Junction temperature
Tj
Storage temperature
Tstg
C to E diode forward current
Note:
ID*
30
1
150
°C
–55 to +150
°C
10
A
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V(BR)CBO
–120
—
—
V
I C = –0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–120
—
—
V
I C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
I E = –50 mA, IC = 0
Collector cutoff current
I CBO
—
—
–10
µA
VCB = –100 V, IE = 0
I CEO
—
—
–10
VCE = –100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
VCE = –3 V, IC = –5 A*1
Collector to emitter saturation
VCE (sat)1
—
—
–1.5
voltage
VCE (sat)2
—
—
–3.0
Base to emitter saturation
VBE (sat)1
—
—
–2.0
voltage
VBE (sat)2
—
—
–3.5
C to E diode forward voltage
VD
—
—
3.0
Note:
1. Pulse Test.
See switching characteristic curve of 2SB955(K).
2
V
I C = –5 A, IB = 10 mA*1
I C = –10 A, IB = –100 mA*1
V
I C = –5 A, IB = 10 mA*1
I C = –10 A, IB = –100 mA*1
V
I D = 10 A*1
2SB1399
Maximum Collector Dissipation Curve
Area of Safe Operation
Collector Current IC (A)
–0.8
–4
–0.6
–2
–0.4 mA
IB = 0
0
–1.0
–2
–3
–4
–5
Collector to emitter Voltage VCE (V)
Ta = 25°C
1 Shot pulse
DC Current Transfer Ratio vs.
Collector Current
10,000
DC current transfer ratio hFE
Collector Current IC (A)
W
–1.0
)
–0.1
–0.03
–0.3 –1.0 –3
–10 –30 –100 –300
Collector to emitter Voltage VCE (V)
150
–2.0
–1.8
–1.6
–1.4
–1.2
°C
25
30
–6
=
–8
PC
TC = 25°C
s
=
–0.3
Typical Output Characteristics
–10
s
s 1m s
0µ
0m
10
=1
50
100
Case Temperature TC (°C)
–1.0
PW
0
–3
(T C
10
IC (max)
n
tio
ra
pe
O
20
–10
1µ
–30 i
C (peak)
DC
Collector power dissipation Pc (W)
30
°C
3,000
1,000
TC
=
75
25°C
–25°C
300
100
VCE = –3 V
30
10
–0.1 –0.3 –1.0 –3
–10 –30
Collector current IC (A)
–100
3
2SB1399
Collector to emitter saturation voltage
VCE (sat) (V)
Base to emitter saturation voltage
VBE (sat) (V)
Saturation Voltage vs. Collector Current
–10
TC = 25°C
–3
200
VBE (sat)
500
–1.0
lC/lB = 200
VCE (sat)
–0.3
–0.1
–0.3 –1.0 –3
–10 –30
Collector current IC (A)
–100
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
10
3
TC = 25°C
1.0
0.3
0.1
1m
10 m
100 m
1.0
Time t (s)
4
10
100
1,000
10.0 ± 0.3
2.8 ± 0.2
7.0 ± 0.3
φ 3.2 ± 0.2
Unit: mm
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
2.5 ± 0.2
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220FM
—
Conforms
1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.