HITACHI 2SD1137

2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
4
A
Collector peak current
I C (peak)
5
A
Collector power dissipation
PC
1.8
W
40
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at TC = 25°C.
2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
100
—
—
V
I C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
4
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CEO
—
—
100
µA
VCE = 80 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
50
µA
VEB = 3.5 V, IC = 0
DC current transfer ratio
hFE
50
—
250
25
—
350
—
—
1.0
Collector to emitter saturation
voltage
Note:
VCE (sat)
VCE = 4 V
I C = 50 mA
V
I C = 1 A, IB = 0.1 A
1. Pulse test.
Maximum Collector Dissipation
Curve
Area of Safe Operation
60
10
(10 V, 4 A)
Collector current IC (A)
Collector power dissipation PC (W)
I C = 0.5 A*1
40
20
3
DC Operation
TC = 25°C
1.0
(40 V, 1 A)
0.3
0.1
(100 V, 50 mA)
0.03
0.01
0
2
50
100
Case temperature TC (°C)
150
1
3
10
30
100 300 1,000
Collector to emitter voltage VCE (V)
2SD1137
1,000
VCE = 5 V
DC current transfer ratio hFE
1.0
Collector current IC (A)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristecs
10
TC = 25°C
8
0.8
6
0.6
4
0.4
2 mA
0.2
IB = 0
TC = 75°C
100
–25°C
30
Collector to Emitter Saturation Voltage
vs. Collector Current
IC = 10 IB
3
TC = 75°C
1.0
25°C
–25°C
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1.0
3
Collector current IC (A)
0.03
3
0.1
0.3
1.0
Collector current IC (A)
10
Base to Emitter Saturation Voltage
vs. Collector Current
10
0.3
25°C
10
0.01
2
4
6
8
10
Collector to emitter voltage VCE (V)
10
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
0
300
1.5
IC = 10 IB
1.0
TC = –25°C
25°C
0.5
0
0.01 0.03
75°C
0.1
0.3
1.0
3
Collector current IC (A)
10
3
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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