HITACHI 2SD1113K

2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
6 kΩ
(Typ)
450 Ω
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
300
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
6
A
Collector peak current
I C(peak)
10
A
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
300
—
500
V
I C = 0.1 mA, IE = 0
Collector to emitter sustain
voltage
VCEO(sus)
300
—
—
V
I C = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CEO
—
—
100
µA
VCE = 300 V, RBE = ∞
DC current transfer ratio
hFE
500
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 4 A, IB = 40 mA*1
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
I C = 4 A, IB = 40 mA*1
Turn on time
t on
—
2.0
—
µs
I C = 4 A, IB1 = –IB2 = 40 mA
Turn off time
t off
—
23
—
µs
I C = 4 A, IB1 = –IB2 = 40 mA
Note:
VCE = 2 V, IC = 4 A*1
1. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
Collector current IC (A)
40
20
0
2
50
50
100
Case temperature TC (°C)
150
10
iC (peak)
IC (max)
1.0
0.1
Ta = 25°C
1 shot pulse
ms s
=1
m
ion
rat
PW = 10
pe
PW DC O
Collector power dissipation Pc (W)
60
0.01
0.005
0.5 1.0 2
5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
2SD1113(K)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
10,000
TC = 25°C
DC current transfer ratio hFE
4
1.0
0.8
3
0.6
0.4
2
1
0.2 mA
5,000
2,000
TC
=
°C
75
25
5
–2
1,000
500
VCE = 2 V
Pulse
200
IB = 0
0
100
0.1
1
2
3
4
5
Collector to emitter voltage VCE (V)
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
Collector current IC (A)
5
0.2
0.5 1.0
2
5
Collector current IC (A)
10
Saturation Voltage vs. Collector Current
10
lC = 200 lB
TC = 25°C
Pulse
5
2
VBE (sat)
1.0
VCE (sat)
0.5
0.2
0.1
0.1
0.2
0.5 1.0
2
5
Collector current IC (A)
10
3
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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