2SD1436(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 1.5 kΩ (Typ) 130 Ω (Typ) 3 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 10 A Collector peak current I C (peak) 15 A 80 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 120 — — V I C = 25 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 200 mA, IC = 0 Collector cutoff current I CBO — — 100 µA VCB = 120 V, IE = 0 I CEO — — 10 µA VCE = 100 V, RBE = ∞ DC current transfer ratio hFE 1000 — 20000 Collector to emitter saturation VCE (sat)1 — — 1.5 V I C = 5 A, IB = 10 mA*1 voltage VCE (sat)2 — — 3.0 V I C = 10 A, IB = 0.1 A*1 Base to emitter saturation VBE (sat)1 — — 2.0 V I C = 5 A, IB = 10 mA*1 voltage VBE (sat)2 — — 3.5 V I C = 10 A, IB = 0.1 A*1 Turn on time Ton — 0.8 — µs I C = 5 A, IB1 = –IB2 = 10 mA Turn off time Toff — 4.0 — µs Note: 2 Symbol 1. Pulse test. VCE = 3 V, IC = 5 A*1 2SD1436(K) Maximum Collector Dissipation Curve Area of Safe Operation s 0µ IC (max) 3 1 m 10 ms (T C 1.0 s = = ) °C 25 40 10 10 80 1 µs iC (peak) DC Collector current IC (A) 30 PW Collector power dissipation Pc (W) 120 0.3 0.1 Ta = 25°C 1 shot pulse 0.03 0 50 100 Case temperature TC (°C) 3 150 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 8 6 4 2 30,000 2.0 TC = 25°C 1.5 DC current transfer ratio hFE Collector current IC (A) 10 1.0 0.8 0.7 0.6 0.5 IB = 0 mA 0 10 30 100 300 Collector to emitter voltage VCE (V) 1 2 3 4 Collector to emitter voltage VCE (V) 5 VCE = 3 V Pulse 10,000 3,000 1,000 5°C =7 TC 25 5 –2 300 100 30 0.3 1.0 3 10 Collector current IC (A) 30 3 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) 2SD1436(K) 4 Saturation Voltage vs. Collector Current 10 3 VBE (sat) 1.0 0.3 0.1 0.03 0.01 0.3 VCE (sat) 500 200 lC/lB = 100 TC = 25°C Pulse 1.0 3 10 Collector current IC (A) 30 15.6 ± 0.3 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g Cautions 1. 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