HITACHI 2SD1126

2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
ID
1.5 kΩ
(Typ)
130 Ω
(Typ)
3
2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
10
A
Collector peak current
I C(peak)
15
A
50
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
ID
10
A
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
I C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 200 mA, IC = 0
Collector cutoff current
I CBO
—
—
100
µA
VCB = 120 V, IE = 0
I CEO
—
—
10
µA
VCE = 100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
2000
Collector to emitter saturation
VCE(sat)1
—
—
1.5
V
I C = 5 A, IB = 10 mA*1
voltage
VCE(sat)2
—
—
3.0
V
I C = 10 A, IB = 0.1 A*1
Base to emitter saturation
VBE(sat)1
—
—
2.0
V
I C = 5 A, IB = 10 mA*1
voltage
VBE(sat)2
—
—
3.5
V
I C = 10 A, IB = 0.1 A*1
C to E diode forward voltage
VD
—
—
3.0
V
I D = 10 A*1
Turn on time
t on
—
0.8
—
µs
I C = 5 A, IB1 = –IB2 = 10 mA
Turn off time
t off
—
8.0
—
µs
Note:
2
Symbol
1. Pulse test.
VCE = 3 V, IC = 5 A*1
2SD1126(K)
Maximum Collector Dissipation Curve
Area of Safe Operation
=
ot
t
sh
1
ho
s
s
1
n
m
s
1
tio
m
ra
pe
O
IC (max)
10
3
D
1.0
C
20
10
=
40
iC (peak)
PW
Collector current IC (A)
30
PW
Collector power dissipation Pc (W)
60
0.3
TC = 25°C
0.1
0.03
0
50
100
Case temperature TC (°C)
3
150
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
8
6
4
2
30,000
2.0
TC = 25°C
1.5
DC current transfer ratio hFE
Collector current IC (A)
10
1.0
0.8
0.7
0.6
0.5 mA
IB = 0
0
10
30
100
300
Collector to emitter voltage VCE (V)
1
2
3
4
Collector to emitter voltage VCE (V)
5
VCE = 3 V
Pulse
10,000
3,000
5°C
=7
TC 5
2
1,000
–2
5
300
100
30
0.3
1.0
3
10
Collector current IC (A)
30
3
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
2SD1126(K)
4
Saturation Voltage vs. Collector Current
10
3
VBE (sat)
1.0
0.3
VCE (sat)
200
500
lC/lB = 100
0.1
0.03
0.01
0.3
TC = 25°C
Pulse
1.0
3
10
Collector current IC (A)
30
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.