2SC1342 Silicon NPN Epitaxial Planar Application • VHF amplifier, mixer • Local oscollator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1342 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4 V Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 20 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 10 V, IE = 0 35 — 200 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — 0.8 1.2 V I C = 10 mA, IB = 1 mA Collector output capacitance Cob — 1.1 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz Base time constant rbb’ •CC — 20 35 ps VCB = 6 V, IC = 1 mA, f = 31.8 MHz Gain bandwidth product fT 150 320 — MHz VCE = 6 V, IC = 1 mA Noise figure NF — 5.5 8.5 dB VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 Ω Reverse transfer capacitance Cre — 0.9 1.2 pF VCE = 10 V, IE = –1 mA, f = 1 MHz Power gain PG 13 17 — dB VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100 Ω, RL = 550 Ω, Unneutralized Note: 1. The 2SC1342 is grouped by h FE as follows. A B C 35 to 70 60 to 120 100 to 200 2 VCE = 6 V, IC = 1 mA 2SC1342 Typical Output Characteristics (1) 20 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 150 100 50 16 12 60 8 PC = 100 mW 40 4 20 µA IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) Typical Output Characteristics (2) 4 50 Typical Transfer Characteristics (1) 40 30 3 20 2 10 µA 1 IB = 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 20 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) 5 Collector Current IC (mA) 240 200 160 180 140 120 100 80 16 VCE = 6 V 12 8 4 0 0.60 0.64 0.68 0.72 0.76 0.80 Base to Emitter Voltage VBE (V) 3 2SC1342 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics (2) 140 4 VCE = 6 V 3 2 1 0 0.60 DC Current Transfer Ratio hFE Collector Current IC (mA) 5 VCE = 6 V 120 100 80 60 40 20 0 0.1 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) 0.64 0.68 0.72 0.76 0.80 Base to Emitter Voltage VBE (V) 4 2.0 1.8 f = 1 MHz IE = 0 1.6 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Base Voltage VCB (V) Reverse Transfer Capacitance vs. Collector to Emitter Voltage Reverse Transfer Capacitance Cre (pF) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 20 2.8 2.4 2.0 1.6 f = 1 MHz IE = –1 mA 1.2 0.8 0.4 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 2SC1342 Gain Bandwidth Product vs. Collector Current 450 1.0 Gain Bandwidth Product fT (MHz) Reverse Transfer Capacitance Cre (pF) Reverse Transfer Capacitance vs. Emitter Current 0.8 0.6 0.4 VCE = 10 V f = 1 MHz 0.2 0 –0.1 –0.2 –0.5 –1.0 –2 Emitter Current IE (mA) 400 350 300 250 200 150 100 12 12 10 Noise Figure NF (dB) Noise Figure NF (dB) Noise Figure vs. Collector Current 14 10 6 50 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector Current IC (mA) –5 Noise Figure vs. Collector to Emitter Voltage 8 VCE = 6 V IC = 1 mA f = 100 MHz Rg = 50 Ω 4 VCE = 6 V f = 100 MHz Rg = 50 Ω 8 6 4 2 2 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 0 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Power Gain Test Circuit IN f = 100 MHz Rg = 100 Ω 300 p D.U.T. 0.1 µ 10 p max 3k 500 OUT RL = 550 Ω 0.01 µ 0.01 µ VEE 0.01 µ VCC Unit R : Ω C:F 5 2SC1342 Small Signal y Parameters (VCE = 6V, IC = 1 mA, Emitter Common Ta = 25°C) Item Symbol f = 50 MHz f = 100 MHz f = 200 MHz Unit Input admittance yie 1.8 + j5.5 4.3 + j9.9 11.5 + j15.25 mS Reverse transfer admittance yre –0.022 – j0.26 –0.04 – j0.52 –0.105 – j0.96 Forward transfer admittance yfe 34 – j12 28 – j19 15.5 – j25 Output admittance yoe 0.1 + j0.5 0.15 + j0.9 0.21 + j1.45 Reverse Transfer Admittance vs. Frequency Input Admittance vs. Frequency Reverse Transfer Conductance gre (mS) 24 –0.3 yie = gie + jbie VCE = 6 V –0.25 –0.2 yre = gre + jbre VCE = 6 V 200 16 100 70 f = 50 MHz 5 mA 3 mA 8 2 mA 4 IC = 1 mA 300 32 1 –2.0 60 IC = 1 mA Output Admittance vs. Frequency 3.0 80 100 yfe = gfe + jbfe VCE = 6 V 2 –40 3 300 200 5 100 70 2.5 yoe = goe + jboe VCE = 6 V 300 2.0 1.5 200 1.0 0.5 IC = 1 mA 2 3 5 100 70 f = 50 MHz f = 50 MHz 0 –100 –1.6 42 Output Suceptance boe (mS) Forward Transfer Suceptance bfe (mS) 6 40 –20 –80 –0.4 –1.2 IC = 5 mA Forward Transfer Conductance gfe (mS) 20 70 100 –0.8 Forward Transfer Admittance vs. Frequency –60 0 200 6 12 18 24 30 36 Input Conductance gie (mS) 0 –0.05 300 12 –20 0 –0.1 f = 50 MHz 20 0 –0.15 Reverse Transfer Suceptance bre (mS) Input Suceptance bie (mS) 28 0.1 0.2 0.3 0.4 0.5 Output Conductance goe (mS) 0.6 2SC1342 Reverse Transfer Admittance vs. Collector to Emitter Voltage –1.0 bre Input Admittance vs. Collector to Emitter Voltage Reverse Transfer Admittance yre (mS) Input Admittance yie (mS) 20 bie 10 gie 5 Yie = gie + jbie IC = 1 mA f = 100 MHz 2 1 1 –0.5 –0.2 –0.1 –0.05 gre –0.02 –0.01 2 5 10 20 Collector to Emitter Voltage VCE (V) 1 2 5 10 20 Collector to Emitter Voltage VCE (V) Forward Transfer Admittance vs. Collector to Emitter Voltage Output Admittance vs. Collector to Emitter Voltage 100 2.0 Yfe = gfe + jbfe IC = 1 mA f = 100 MHz 50 gfe bfe 20 10 5 Output Admittance yoe (mS) Forward Transfer yfe (mS) Yre = gre + jbre IC = 1 mA f = 100 MHz boe 1.0 Yoe = goe + jboe IC = 1 mA f = 100 MHz 0.5 goe 0.2 0.1 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 7 2SC1342 Reverse Transfer Admittance vs. Collector Current Input Admittance vs. Collector Current Reverse Transfer Admittance yre (mS) Input Admittance yie (mS) 50 Yie = gie + jbie VCE = 6 V f = 100 MHz 20 bie 10 5 gie 2 1.0 0.5 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 –1.0 –0.1 –0.02 –0.01 0.1 Yfe = gfe + jbfe VCE = 6 V f = 100 MHz Output Admittance yoe (mS) Forward Transfer Admittance yfe (mS) 8 10 Output Admittance vs. Collector Current gfe bfe 2 1 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA) 5 20 5 gre –0.05 100 10 Yre = gre + jbre VCE = 6 V f = 100 MHz –0.2 Forward Transfer Admittance vs. Collector Current 50 bre –0.5 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 2 1.0 0.5 boe Yoe = goe + jboe VCE = 6 V f = 100 MHz 0.2 0.1 0.05 0.1 goe 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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