HITACHI 2SC454

2SC454
Silicon NPN Epitaxial
Application
High frequency amplifier, mixer
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC454
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
30
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 18 V, IE = 0
Emitter cutoff current
I EBO
—
—
0.5
µA
VEB = 2 V, IC = 0
100
—
500
1
DC current transfer ratio
hFE*
Base to emitter voltage
VBE
—
0.63
0.75
V
VCE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.2
V
I C = 10 mA, IB = 1 mA
Gain bandwidth product
fT
—
230
—
MHz
VCE = 12 V, IC = 2 mA
Collector output capacitance
Cob
—
—
3.5
pF
VCB = 10 V, IE = 0, f = 1 MHz
Noise figure
NF
—
—
25
dB
VCE = 6 V, IC = 0.1 mA,
f = 1 kHz, Rg = 500 Ω
IF power gain
IFG
—
35
—
dB
VCE = 12 V, IC = 1 mA,
f = 455 kHz, Rg = 1.5 kΩ,
RL = 40 kΩ
Note:
1. The 2SC454 is grouped by h FE as follows.
B
C
D
100 to 200
160 to 320
250 to 500
2
VCE = 12 V, IC = 2 mA
2SC454
Small Signal y Parameters (VCE = 12 V, IC = 2mA, Emitter Common)
Item
Symbol
f
2SC454B
2SC454C
Unit
Input admittance
yie
455 kHz
0.35 + j0.074
0.28 + j0.070
mS
1MHz
0.35 + j0.130
0.28 + j0.125
455 kHz
–j0.005
–j0.005
1MHz
–j0.013
–j0.013
455 kHz
66 – j2.43
64 – j2.60
1MHz
66 – j4.27
66 – j5.7
455 kHz
0.006 + j0.02
0.007 + j0.022
1MHz
0.006 + j0.047
0.007 + j0.049
Reverse transfer admittance
Forward transfer admittance
Output admittance
yre
yfe
yoe
16
W
m
50
80
0
Collector current IC (mA)
200
100
20
20
100
mS
Typical Output Characteristics (1)
250
150
mS
=
PC
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
mS
12
60
8
40
4
20 µA
IB = 0
0
50
100
150
Ambient Temperature Ta (°C)
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
3
2SC454
Typical Transfer Characteristics (1)
Typical Output Characteristics (2)
5
5
25
4
Collector Current IC (mA)
Collector Current IC (mA)
30
20
3
15
2
10
1
5 µA
4
VCE = 12 V
3
2
1
IB = 0
0
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics (2)
300
16
12
8
4
0
4
VCE = 12 V
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio hFE
Collector Current IC (mA)
20
240
VCE = 12 V
180
120
60
0
0.1 0.2
0.5 1.0 2
5 10 20
Collector Current IC (mA)
50
2SC454
Percentage of Relative to VCE = 12 V (%)
Gain Band width Product vs.
Collector Current
VCE = 12 V
400
300
200
100
Percentage of Relative to IC = 2 mA (%)
0
0.1
0.3
1.0
3
10
Collector Current IC (mA)
1,000
500
200
goe
100
50
20
boe
gie
bie
bie
gie
boe
goe
10
0.1 0.2
0.5 1.0 2
5
Collector Current IC (mA)
goe
200
bie
100 gie
boe
IC = 2 mA
f = 455 kHz, 1 MHz
gie b
ie
boe
goe
50
20
10
1
2
5
10
20
50
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector Current
VCE = 12 V
f = 455 kHz, 1 MHz
500
30
10
Percentage of Relative to VCE = 12 V (%)
Gain Bandwidth Product fT (MHz)
500
Input/Output Admittance vs.
Collector to Emitter Voltage
500
bre
200
bfe
100
gfe
IC = 2 mA
f = 455 kHz, 1 MHz
gfe
bre bfe
50
20
10
1
2
5
10
20
50
Collector to Emitter Voltage VCE (V)
5
2SC454
Percentage of Relative to IC = 2 mA (%)
Transfer Admittance vs.Collector Current
6
1,000
500
VCE = 12 V
f = 455 kHz, 1 MHz
200
100
bfe
bre
gfe
bre
50
20
10
0.1
gfe
bfe
0.2
0.5 1.0
2
5
Collector Current IC (mA)
10
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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