2SC2471 Silicon NPN Epitaxial Application • UHF Amplifier • UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 310 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 30 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 3 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 100 nA VCB = 24 V, IE = 0 Emitter cutoff current I EBO — — 100 nA VEB = 2 V, IC = 0 Collector to emitter saturation voltage VCE(sat) — — 300 mV I C = 10 mA, IB = 5 mA Base to emitter voltage VBE — — 0.95 V VCE = 10 V, IC = 5 mA DC current transfer ratio hFE 20 — — Gain bandwidth product fT 1000 2000 — MHz VCE = 10 V, IC = 5 mA Collector output capacitance Cob — 0.9 1.5 pF VCB = 10 V, IE = 0, f = 1 MHz Base time constant rbb’ — 12 20 ps VCB = 10 V, IC = 5 mA, f = 31.8 MHz 2 • CC VCE = 10 V, IC = 5 mA 2SC2471 DC Current Transfer Ratio vs. Collector Current 100 DC Current Transfer Ratio hFE Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 400 300 200 100 VCE = 10 V 80 60 40 20 0 1 50 100 150 Ambient Temperature Ta (°C) 0 VCE = 10 V 2,000 1,500 1,000 500 0 50 Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) 2,500 2 5 10 20 Collector Current IC (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 1 2 5 10 20 Collector Current IC (mA) 5 f = 1 MHz IE = 0 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC2471 Base Time Constant vs.Collector Current Input Admittance vs. Frequency 100 50 VCB = 10 V f = 31.8 MHz 40 Input Admittance yib (mS) Best Time Constant rbb'•CC (ps) 50 30 20 10 bib VCB = 10 V IC = 5 mA Common Base yib = gib + jbib 20 10 5 2 1.0 0.5 0.2 4 8 12 16 Collector Current IC (mA) 0 0.1 100 20 200 500 Frequency f (MHz) 20 Forward Transfer Admittance yfb (mS) Output Admittance yob (mS) 100 50 VCB = 10 V IC = 5 mA Common Base yob = gob + jbob 10 5 bob 2 1.0 0.5 gob 0.2 0.1 100 200 500 Frequency f (MHz) 1,000 Forward Transfer Admittance vs. Frequency Output Admittance vs. Frequency 4 gib 1,000 100 80 60 40 20 VCB = 10 V IC = 5 mA Common Base yfb = gfb + jbfb 0 bfb gfb –20 –40 –60 –80 –100 100 200 500 Frequency f (MHz) 1,000 2SC2471 Reverse Transfer Admittance yrb (mS) Reverse Transfer Admittance vs. Frequency 4 2 0 VCB = 10 V IC = 5 mA Common Base yrb = grb + jbrb grb brb –2 –4 –6 100 200 500 Frequency f (MHz) 1,000 5 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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