2SC1907 Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1907 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2 V Collector current IC 50 mA Emitter current IE –50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 19 — — V I C = 3 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 2 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 10 V, IE = 0 DC current transfer ratio hFE 40 — — Collector to emitter saturation voltage VCE(sat) — 0.2 1.0 V I C = 20 mA, IB = 4 mA Collector output capacitance Cob — 1.0 2.0 pF VCB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product fT 900 1100 — MHz VCE = 10 V, IC = 10 mA Base time constant rbb’ — 10 25 ps VCB = 10 V, IC = 10 mA, f = 31.8 MHz Oscillation output power Pout — 8 — mW VCB = 10 V, IC = 10 mA, f = 930 MHz 2 • CC VCE = 10 V, IC = 10 mA 2SC1907 Typical Output Caracteristics 40 30 20 IB = 10 µA 4 4 0 100 150 50 Ambient Temperature Ta (°C) 16 20 200 DC Current Transfer Ratio hFE Collector Current IC (mA) 12 DC Current Transfer Ratio vs. Collector Current 20 VCE = 10 V 12 8 4 0 8 Collector to Emitter Voltage VCE (V) Typical Transfer Caracteristics 16 W 0 8 m 100 12 0 200 16 120 110 100 90 80 70 60 50 30 Collector Current IC (mA) 300 0 13 = Collector Power Dissipation PC (mW) 20 PC Maximum Collector Dissipation Curve 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 VCE = 10 V 160 120 80 40 0 0.1 0.2 0.5 1.0 2 5 10 20 50 Collector Current IC (mA) 3 2SC1907 Gain Bandwidth Product vs. Collector Current Base Time Constant vs. Collector Current 200 Base Time Constant rbb'•CC (ps) VCE = 10 V 1,000 800 600 400 200 0 0.2 5 0.5 1.0 2 10 20 50 100 VCB = 10 V f = 31.8 MHz 100 50 20 10 5 2 0.1 0.2 0.5 2 1.0 5 Collector Current IC (mA) Reverse Transfer Admittance Characteristics Input Admittance Characteristics 0 0 600 –40 VCB = 10 V Input end short m 15 = –50 800 900 1,000 400 VCB = 10 V Output end short –2 –3 –4 A 5 mA 10 15 mA mA –30 –1 5m IC = 400 MHz A 600 –20 yrb = grb+jbrb mA –10 yib = gib+jbib 10 1,200 MHz 1,000 900 800 IC Input Suceptance bib (mS) 10 Collector Current IC (mA) –5 1,200 –60 –6 0 5 10 15 20 25 Input Conductance gib (mS) 4 30 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 Reverse Transfer Conductance grb (mS) Reverse Transfer Suceptance brb (mS) Gain Bandwidth Product fT (MHz) 1,200 2SC1907 Output Admittance Characteristics 15 60 yob = gob+jbob 400 MHz 50 m A 5m =1 10 40 A 5m 600 A 30 800 20 10 900 1,000 VCB = 10 V Output end short 10 5 1,200 1,000 900 800 600 400 MHz IC = 5 10 mA 15 mA mA Output Suceptance bob (mS) yfb = gfb+jbfb IC Forward Transfer Suceptance bfb (mS) Forward Transfer Admittance Characteristics VCB = 10 V Input end short 1,200 0 –30 –20 –10 0 10 20 30 Forward Transfer Conductance gfb (mS) 0 1.5 3.0 4.5 6.0 7.5 Output Conductance gob (mS) 5 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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