HITACHI 2SC1907

2SC1907
Silicon NPN Epitaxial Planar
Application
UHF TV Tuner, Local oscillator
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1907
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
19
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
50
mA
Emitter current
IE
–50
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
19
—
—
V
I C = 3 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
2
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 10 V, IE = 0
DC current transfer ratio
hFE
40
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
0.2
1.0
V
I C = 20 mA, IB = 4 mA
Collector output capacitance
Cob
—
1.0
2.0
pF
VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
900
1100
—
MHz
VCE = 10 V, IC = 10 mA
Base time constant
rbb’
—
10
25
ps
VCB = 10 V, IC = 10 mA,
f = 31.8 MHz
Oscillation output power
Pout
—
8
—
mW
VCB = 10 V, IC = 10 mA,
f = 930 MHz
2
•
CC
VCE = 10 V, IC = 10 mA
2SC1907
Typical Output Caracteristics
40
30
20
IB = 10 µA
4
4
0
100
150
50
Ambient Temperature Ta (°C)
16
20
200
DC Current Transfer Ratio hFE
Collector Current IC (mA)
12
DC Current Transfer Ratio vs.
Collector Current
20
VCE = 10 V
12
8
4
0
8
Collector to Emitter Voltage VCE (V)
Typical Transfer Caracteristics
16
W
0
8
m
100
12
0
200
16
120
110
100
90
80
70
60
50
30
Collector Current IC (mA)
300
0
13
=
Collector Power Dissipation PC (mW)
20
PC
Maximum Collector Dissipation Curve
0.2
0.4
0.6
0.8
Base to Emitter Voltage VBE (V)
1.0
VCE = 10 V
160
120
80
40
0
0.1 0.2
0.5 1.0
2
5
10
20
50
Collector Current IC (mA)
3
2SC1907
Gain Bandwidth Product vs.
Collector Current
Base Time Constant vs.
Collector Current
200
Base Time Constant rbb'•CC (ps)
VCE = 10 V
1,000
800
600
400
200
0
0.2
5
0.5 1.0 2
10 20
50 100
VCB = 10 V
f = 31.8 MHz
100
50
20
10
5
2
0.1
0.2
0.5
2
1.0
5
Collector Current IC (mA)
Reverse Transfer Admittance
Characteristics
Input Admittance Characteristics
0
0
600
–40
VCB = 10 V
Input end short
m
15
=
–50
800
900
1,000
400
VCB = 10 V
Output end short
–2
–3
–4
A
5 mA
10
15 mA
mA
–30
–1
5m
IC =
400 MHz
A
600
–20
yrb = grb+jbrb
mA
–10
yib = gib+jbib
10
1,200 MHz
1,000
900
800
IC
Input Suceptance bib (mS)
10
Collector Current IC (mA)
–5
1,200
–60
–6
0
5
10
15
20
25
Input Conductance gib (mS)
4
30
–1.2 –1.0 –0.8 –0.6 –0.4 –0.2
0
Reverse Transfer Conductance grb (mS)
Reverse Transfer Suceptance brb (mS)
Gain Bandwidth Product fT (MHz)
1,200
2SC1907
Output Admittance Characteristics
15
60
yob = gob+jbob
400 MHz
50
m
A
5m
=1
10
40
A
5m
600
A
30
800
20
10
900
1,000
VCB = 10 V
Output end short
10
5
1,200
1,000
900
800
600
400 MHz
IC =
5
10 mA
15 mA
mA
Output Suceptance bob (mS)
yfb = gfb+jbfb
IC
Forward Transfer Suceptance bfb (mS)
Forward Transfer Admittance
Characteristics
VCB = 10 V
Input end short
1,200
0
–30
–20
–10
0
10
20
30
Forward Transfer Conductance gfb (mS)
0
1.5
3.0
4.5
6.0
7.5
Output Conductance gob (mS)
5
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
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products.
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