HITACHI 2SD2263

2SD2263
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Features
• Build in zener diode for surge absorb.
• Suitable for relay drive with small power loss.
Outline
TO-92 (1)
2
ID
3
1. Emitter
2. Collector
3. Base
1
3
2
1
2SD2263
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
25
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
0.5
A
Collector peak current
iC(peak)
1.0
A
E to C diode current
ID
0.5
A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
25
—
35
V
I C = 1 mA, RBE = ∞
Collector to emitter sustaining
voltage
V CEO (sus)
26
—
36
V
I C = 0.5 A, RBE = ∞,
L = 20 mH
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.2
µA
VCB = 20 V, IE = 0
I CEO
—
—
0.5
µA
VCE = 20 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
0.2
µA
VEB = 5 V, IC = 0
DC current transfer ratio
hFE1
100
—
500
VCE = 2 V, IC = 50 mA*1
hFE2
50
—
—
VCE = 2 V, IC = 0.5 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.5
V
I C = 0.5 A*1, I B = 50 mA
E to C diode forward voltage
VD
—
—
1.2
V
I E = 0.5 A*1
Note:
2
1. Pulse test
2SD2263
Area of Safe Operation
3
0.8
iC (peak)
Collector Current IC (A)
m
s
D
(T C O
C
= per
25 at
°C ion
)
0.03
Ta = 25°C, 1 Shot Pulse
0.01
0
50
100
150
200
Ambient Temperature Ta (°C)
0.003
0.1 0.3
1
3
10
30
100
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
PW = 0.5 W
2.0
0.4
1.6
1.4
1.2
1.0
0.3
0.8
1.8
0.6
0.2
0.4
0.1
Typical Transfer Characteristics
0.5
0.2 mA
Collector Current IC (A)
0.5
Collector Current IC (A)
s
m
0.2
0.1
IC (max)
10
0.4
0.3
=
0.6
1
1
PW
Collector Power Dissipation Pc (W)
Maximum Collector Dissipation Curve
0.4
0.3
0.2
0.1
VCE = 2 V
IB = 0, Ta = 25°C
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
3
2SD2263
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio hFE
300
100
30
VCE = 2 V
10
1
3
10
30
100 300
Collector Current IC (mA)
Collector to Emitter Saturation Voltage
VCE (sat) (V)
Base to Emitter Saturation Voltage
VBE (sat) (V)
Saturation Voltage vs. Collector Current
1,000
10
3
VBE (sat)
1
0.3
0.1
VCE (sat)
0.03
lC = 10 lB
0.01
1,000
1
Typical Characteristics of
Emitter to Collector Diode
3
10
30
100 300
Collector Current IC (mA)
1,000
Gain Bandwidth Product vs.
Collector Current
0.5
Gain Bandwidth Product fT (MHz)
Diode Current ID (A)
1,000
0.4
0.3
0.2
0.1
0
4
0.4
0.8
1.2
1.6
2.0
Emitter to Collector Forward Voltage
VECF (V)
VCE = 2 V
300
100
30
10
1
3
10
30
100 300
Collector Current IC (mA)
1,000
2SD2263
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
100
30
10
3
1
0.1
0.3
1
3
10
30
100
Collector to Base Voltage VCB (V)
5
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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