2SD2263 Silicon NPN Epitaxial Application Low frequency power amplifier Features • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Outline TO-92 (1) 2 ID 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD2263 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6 V Collector current IC 0.5 A Collector peak current iC(peak) 1.0 A E to C diode current ID 0.5 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 25 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 25 — 35 V I C = 1 mA, RBE = ∞ Collector to emitter sustaining voltage V CEO (sus) 26 — 36 V I C = 0.5 A, RBE = ∞, L = 20 mH Emitter to base breakdown voltage V(BR)EBO 6 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.2 µA VCB = 20 V, IE = 0 I CEO — — 0.5 µA VCE = 20 V, RBE = ∞ Emitter cutoff current I EBO — — 0.2 µA VEB = 5 V, IC = 0 DC current transfer ratio hFE1 100 — 500 VCE = 2 V, IC = 50 mA*1 hFE2 50 — — VCE = 2 V, IC = 0.5 A*1 Collector to emitter saturation voltage VCE(sat) — — 0.5 V I C = 0.5 A*1, I B = 50 mA E to C diode forward voltage VD — — 1.2 V I E = 0.5 A*1 Note: 2 1. Pulse test 2SD2263 Area of Safe Operation 3 0.8 iC (peak) Collector Current IC (A) m s D (T C O C = per 25 at °C ion ) 0.03 Ta = 25°C, 1 Shot Pulse 0.01 0 50 100 150 200 Ambient Temperature Ta (°C) 0.003 0.1 0.3 1 3 10 30 100 Collector to Emitter Voltage VCE (V) Typical Output Characteristics PW = 0.5 W 2.0 0.4 1.6 1.4 1.2 1.0 0.3 0.8 1.8 0.6 0.2 0.4 0.1 Typical Transfer Characteristics 0.5 0.2 mA Collector Current IC (A) 0.5 Collector Current IC (A) s m 0.2 0.1 IC (max) 10 0.4 0.3 = 0.6 1 1 PW Collector Power Dissipation Pc (W) Maximum Collector Dissipation Curve 0.4 0.3 0.2 0.1 VCE = 2 V IB = 0, Ta = 25°C 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 3 2SD2263 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE 300 100 30 VCE = 2 V 10 1 3 10 30 100 300 Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 1,000 10 3 VBE (sat) 1 0.3 0.1 VCE (sat) 0.03 lC = 10 lB 0.01 1,000 1 Typical Characteristics of Emitter to Collector Diode 3 10 30 100 300 Collector Current IC (mA) 1,000 Gain Bandwidth Product vs. Collector Current 0.5 Gain Bandwidth Product fT (MHz) Diode Current ID (A) 1,000 0.4 0.3 0.2 0.1 0 4 0.4 0.8 1.2 1.6 2.0 Emitter to Collector Forward Voltage VECF (V) VCE = 2 V 300 100 30 10 1 3 10 30 100 300 Collector Current IC (mA) 1,000 2SD2263 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Collector to Base Voltage VCB (V) 5 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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