HITACHI 2SD2423

2SD2423
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Features
The transistor with a built-in zener diode of surge absorb.
Outline
UPAK
2, 4
1
3
2
1
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
ID
2 kΩ
(Typ)
0.5 Ω
(Typ)
3
2SD2423
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
1.5
A
1
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Collector to emitter diode forward current
ID
1.5
A
Note:
1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
50
—
70
V
I C = 100 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
50
—
—
V
I C = 10 mA, RBE = ∞
Collector to emitter sustaining
voltage
VCEO(sus)
50
—
70
V
I C = 1.5 A, RBE = ∞,
L = 10 mH*1
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CEO
—
—
10
µA
VCE = 40 V, RBE = ∞
DC current transfer ratio
hFE
2000
—
10000
Collector to emitter saturation
voltage
VCE(sat)1
—
—
1.5
V
I C = 1 A, IB = 1 mA*1
Collector to emitter saturation
voltage
VCE(sat)2
—
—
2.3
V
I C = 1.5 A, IB = 1.5 mA*1
Base to emitter saturation
voltage
VBE(sat)1
—
—
2.0
V
I C = 1 A, IB = 1 mA*1
Base to emitter saturation
voltage
VBE(sat)2
—
—
2.5
V
I C = 1.5 A, IB = 1.5 mA*1
Emitter to collector diode
forward voltage
VD
—
—
3.5
V
I D = 1.5 A*1
Notes: 1. Pulse test
2. Marking is “GT”.
2
VCE = 3 V, IC = 1 A*1
2SD2423
Area of Safe Operation
(A)
10
IC
Collector Current
0.1
50
100
150
200
Ambient Temperature Ta (°C)
1 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.01
DC Current Transfer Ratio vs.
Collector Current
10000
h FE
Pc = 1 W
5000
A
0.5 m
0.4 mA
0.3 mA
0.8
0.4
0
on
0.001
0.1
1
10
100
Cellector to Emitter Voltage V CE (V)
0.2 mA
I B = 0 Ta = 25°C
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio
I C (A)
Collector Current
1.2
ati
s
er
Typical Output Characteristics
1.6
Op
Ta = 25°C
1 shot pulse
0
2.0
s
DC
m
10
0.5
1
=
1.0
1m
1.5
Pw
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
2.0
VCE = 3 V
pulse
Ta = 75°C
2000
1000
500
25°C
–25°C
200
100
0.1
0.2
0.5
1
2
5
Collector Current I C (A)
10
3
2SD2423
2
1
Ta = –25°C
0.5
10
5
0.2
2
1
0.2
0.2
0.5
1
2
5
Collector Current I C (A)
I C / I = 200
B
0.1 pulse
0.1 0.2
0.5
1
2
5
Collector Current I C (A)
10
Collector Current vs.
Base to Emitter Voltage
Collector Current
I C (mA)
VCE = 3 V
1000 pulse
100
25°C
75°C
30
10
3
1
0
4
Ta = –25°C
0.4
0.8
1.2
1.6
2.0
Base to Emitter Voltage V BE (V)
10
Collector Output Capacitance vs.
Collector to Base Voltage
100
Collector Output Capacitance Cob (pF)
3000
300
Ta = –25°C
25°C
75°C
0.5
25°C
75°C
0.1
0.1
Base to Emitter Saturation Voltage vs.
Collector Current
Base to Emitter Saturation Voltage
V BE(sat) (V)
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Collector to Emitter Saturation Voltage vs.
Collector Current
10
I C / I B = 200
5 pulse
50
Ta = 25°C
IE = 0
f = 1 MHz
20
10
5
2
1
0.1 0.2
0.5
1
2
Collector to Base Voltage
5
10
V CB (V)
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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