2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B (Z) 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 1. Source 2. Gate 3. Drain G S 1 2SJ576 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±20 V Drain current ID -100 mA -400 mA -100 mA 300 mW Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note 2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -30 — — V I D = -100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±5 µA VGS = ±16 V, VDS = 0 Zero gate voltege drain current I DSS — — -1 µA VDS = -30 V, VGS = 0 Gate to source cutoff voltage VGS(off) -1.3 — -2.3 V I D = -10µA, VDS = -5 V Static drain to source on state RDS(on) — 2.8 3.3 Ω ID = -50 mA,VGS = -10 V Note 3 resistance RDS(on) — 5.7 7.9 Ω ID = -50 mA,VGS = -4 V Note 3 Forward transfer admittance |yfs| 68 105 — mS ID = -50 mA, V DS = -10 V Note 3 Input capacitance Ciss — 25 — pF VDS = -10 V Output capacitance Coss — 20 — pF VGS = 0 Reverse transfer capacitance Crss — 8 — pF f = 1 MHz Turn-on delay time t d(on) — 10 — ns I D = -50 mA, VGS = -10 V Rise time tr — 15 — ns RL = 200Ω Turn-off delay time t d(off) — 40 — ns Fall time tf — 45 — ns Note: 2 3. Pulse test 4. Marking is AP See characteristics curves of 2SJ575 2SJ576 Main Characteristics Maximum Safe Operation Area Power vs. temperature Derating -5 I D (A) 300 Drain Current Channel Dissipation *Pch (mW) 400 200 100 -2 -1.0 -0.2 -0.1 50 100 Ambient Temperature 150 200 Ta ( °C) *Value on the alumina ceramic board.(12.5x20x0.7mm) PW DC -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 0 10 µs 100 µs 1 ms -0.5 = (1 10 m sh s ot er ) at ion Op Operation in this area is limited by RDS(on) Ta=25 °C -0.0005 -0.05 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -20 Drain to Source Voltage -50 VDS (V) Value on the alumina ceramic board.(12.5x20x0.7mm) 3 2SJ576 Package Dimensions + 0.10 0.16 – 0.06 0 ~ 0.1 2.1 + 0.3 – 0.3 + 0.10 – 0.05 0.1 1.25 +– 0.1 0.3 0.425 Unit: mm 0.65 0.65 1.3 0.9– 0.1 + 0.1 0.2 2.0 0.1 0.3 +– 0.0.5 + 0.2 – 0.2 + 0.2 – 0.2 0.425 + 0.1 0.3– 0.05 Hitachi Code EIAJ JEDEC 4 CMPAK SC–70 – 2SJ576 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 5