ETC HAT1053M

HAT1053M
Silicon P Channel Power MOS FET
Power Switching
ADE-208-1220 (Z)
Preliminary 1st. Edition
Dec. 2000
Features
•
•
•
•
Low on-resistance
Low drive current
High density mounting
2.5 V gate drive device
Outline
TSOP-6
4
5
6
1 2 5 6
D D D D
3
2
1
3
G
4
Source
3
Gate
1, 2, 5, 6 Drain
S
4
HAT1053M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–20
V
Gate to source voltage
VGSS
±12
V
Drain current
ID
–5.5
A
–22
A
–5.5
A
2.0
W
1.05
W
Drain peak current
I D(pulse)
Note 1
Body-drain diode reverse drain current
Channel dissipation
I DR
Note 2
Pch (pulse)
Note 2
Pch (continuous)
Note 3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (50 x 50 x 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. Value on the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–20
—
—
V
I D = –10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±12 V, V DS = 0
Zero gate voltege drain current
I DSS
—
—
–1
µA
VDS = –20 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–0.4
—
–1.4
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
RDS(on)
—
34
41
mΩ
I D = –3 A, VGS = –4.5 V Note 1
—
53
64
mΩ
I D = –3 A, VGS = –2.5 V Note 1
resistance
Forward transfer admittance
|yfs|
6
8.5
—
S
I D = –3 A, VDS = –10 V Note 1
Input capacitance
Ciss
—
1240
—
pF
VDS = –10 V
Output capacitance
Coss
—
285
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
110
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
60
—
ns
VGS = –4.5 V, ID = –3 A
Rise time
tr
—
310
—
ns
RL = 3.3 Ω
Turn-off delay time
t d(off)
—
660
—
ns
Fall time
tf
—
570
—
ns
Body–drain diode forward
voltage
VDF
—
–0.85
–1.1
V
Note:
2
1. Pulse test
I F = –5.5 A, VGS = 0
HAT1053M
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation
Pch (W)
2.0
1.5
Value on the alumina
ceramic board.
(50 x 50 x 0.7 mm) ,(PW≤ 5s)
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
3
HAT1053M
Package Dimensions
As of January, 2001
Unit: mm
2.95 ± 0.15
+0.1
1.6 ± 0.15
0.6
2.8 ± 0.2
0.6
6-0.3 -0.05
+0.1
0.15-0.05
0 - 0.1
1.0
1.0
0.2
0.9 ± 0.1
2.0 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
TSOP-6
—
—
0.012 g
HAT1053M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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