2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3133(L),2SK3133(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 50 A 200 A 50 A 50 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note 1 Note 2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10 mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltege drain current I DSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V I D = 1 mA, VDS = 10 V Note 1 Static drain to source on state RDS(on) — 7 10 mΩ I D = 25 A, VGS = 10 V Note 1 — 12 18 mΩ I D = 25 A, VGS = 4 V Note 1 resistance Forward transfer admittance |yfs| TBD TBD — S I D = 25 A, VDS = 10 V Note 1 Input capacitance Ciss — TBD — pF VDS = 10V Output capacitance Coss — TBD — pF VGS = 0 Reverse transfer capacitance Crss — TBD — pF f = 1 MHz Total gate charge Qg — TBD — nc VDD = 10 V Gate to source charge Qgs — TBD — nc VGS = 10 V Gate to drain charge Qgd — TBD — nc I D = 50 A Turn-on delay time t d(on) — TBD — ns VGS = 10 V, ID = 25 A Rise time tr — TBD — ns RL = 0.4 Ω Turn-off delay time t d(off) — TBD — ns Fall time tf — TBD — ns Body–drain diode forward voltage VDF — TBD — V I F = 50 A, VGS = 0 Body–drain diode reverse recovery time t rr — TBD — ns I F = 50 A, VGS = 0 diF/ dt = 50 A/ µs Note: 2 1. Pulse test 2SK3133(L),2SK3133(S) Main Characteristics Power vs. Temperature Derating Channel Dissipation Pch (W) 80 60 40 20 0 50 100 Case Temperature 150 200 Tc (°C) 3 2SK3133(L),2SK3133(S) Package Dimensions 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 2.54 ± 0.5 (1.4) (1.5) (1.5) 1.27 ± 0.2 3.0 +0.3 –0.5 2.59 ± 0.2 4.44 ± 0.2 8.6 ± 0.3 10.0 +0.3 –0.5 10.2 ± 0.3 1.27 ± 0.2 0.76 ± 0.1 1.3 ± 0.2 11.3 ± 0.5 4.44 ± 0.2 11.0 ± 0.5 1.2 ± 0.2 0.86 +0.2 –0.1 8.6 ± 0.3 10.0 +0.3 –0.5 (1.5) 10.2 ± 0.3 (1.4) Unit: mm 1.3 ± 0.2 0.1 +0.2 –0.1 2.59 ± 0.2 0.4 ± 0.1 0.86 +0.2 –0.1 2.54 ± 0.5 S type Hitachi Code EIAJ JEDEC 4 LDPAK — — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. 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