HITACHI 2SK2220

2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
•
•
•
•
•
•
•
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Outline
TO-3P
D
1
G
2
S
3
1. Gate
2. Source
(Flange)
3. Drain
2SK2220, 2SK2221
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK2220
Symbol
Ratings
Unit
VDSX
180
V
2SK2221
200
Gate to source voltage
VGSS
±20
V
Drain current
ID
8
A
Body to drain diode reverse drain current
I DR
8
A
1
Channel dissipation
Pch*
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note
1. Value at Tc = 25 °C
Electrical Characteristics (Ta = 25°C)
Item
Drain to source
2SK2220
breakdown
voltage
2SK2221
Symbol
Min
Typ
Max
Unit
Test conditions
V(BR)DSX
180
—
—
V
I D = 10 mA, VGS = –10 V
200
—
—
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.15
—
1.45
V
I D = 100 mA
VDS = 10 V
Drain to source saturation
voltage
VDS(sat)
—
—
12
V
I D = 8 A, VGD = 0 V*1
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = 3 A
VDS = 10 V*1
Input capacitance
Ciss
—
600
—
pF
VGS = –5 V
Output capacitance
Coss
—
800
—
pF
VDS = 10 V
Reverse transfer capacitance
Crss
—
8
—
pF
f = 1 MHz
Turn-on time
t on
—
250
—
ns
VDD = 30 V
Turn-off time
t off
—
90
—
ns
ID = 4 A
Note
2
1. Pulse Test
2SK2220, 2SK2221
Power vs. Temperature Derating
Ta = 25°C
s
(1
0
t)
(1
t)
=
(T C
o
Sh
n
)
°C
25
1.0
o
Sh
s
m
tio
ra
Drain Current ID (A)
m
10
pe
2
0.5
2SK2220
0
50
100
Case Temperature
9
8
VGS =
10 V
8
5
Tc (°C)
7
Drain Current ID (A)
8
Pch = 125 W
6
5
4
4
3
2
6
4
6
4
3
2
1
1
10
30
40
20
Drain to Source Voltage VDS (V)
8
9
5
2
0
VGS = 10 V
TC = 25°C
7
2
0
10
20 50
100 200
500
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10
TC = 25°C
6
2SK2221
0.2
150
Typical Output Characteristics
10
Drain Current ID (A)
10
=
O
50
5
=
100
PW
10
C
D
Channel Dissipation
Maximum Safe Operation Area
20
PW
Pch (W)
150
50
0
2
6
8
4
Drain to Source Voltage VDS (V)
0
10
3
2SK2220, 2SK2221
Typical Transfer Characteristics
Typical Transfer Characteristics
10
4
2
4
2
6
8
Gate to Source Voltage VGS (V)
10
°C
75
25
0
Forward Transfer Admittance
vs. Frequency
1.0
0.1
TC = 25°C
VDS = 10 V
ID = 2 A
0.01
0.001
0.0005
2k
0.8
0.4
1.2
1.6
Gate to Source Voltage VGS (V)
2.0
Switching Time vs. Drain Current
500
5
Switching Time t on, t off (ns)
Forward Transfer Admittance yfs (S)
=–
0.4
0.2
0
4
C
0.6
T
Drain Current ID (A)
75
VDS = 10 V
25
C
6
0.8
25
=–
25°
VDS = 10 V
TC
Drain Current ID (A)
8
1.0
10 k
1M
100 k
Frequency f (Hz)
10 M 20 M
t on
200
100
50
t off
20
10
5
0.1
0.2
2
0.5 1.0
Drain Current ID (A)
5
10
2SK2220, 2SK2221
Waveforms
Switching Time Test Circuit
90%
Output
RL
Input
Input
10%
t on
PW = 50 µs
duty ratio
= 1%
10%
30 V
50 Ω
t off
Output
90%
5
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.