HITACHI 2SJ363

2SJ363
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ363
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–2
A
–4
A
–2
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “PY”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±10 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–1
µA
VDS = –24 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –100 µA, VDS = –10 V
Static drain to source on state
RDS(on)
—
0.6
0.75
Ω
I D = –1 A, VGS = –4 V*1
—
0.35
0.45
Ω
I D = –1 A, VGS = –10 V*1
resistance
Forward transfer admittance
|yfs|
1.4
2.0
—
S
I D = –1 A, VDS = –10 V*1
Input capacitance
Ciss
—
2.1
—
pF
VDS = –10 V, VGS = 0,
Output capacitance
Coss
—
100
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
0.25
—
pF
Turn-on delay time
t d(on)
—
1.65
—
µs
I D = –1 A, VGS = –10 V,
Rise time
tr
—
8
—
µs
RL = 30 Ω
Turn-off delay time
t d(off)
—
25.9
—
µs
Fall time
tf
—
14.9
—
µs
2
2SJ363
Maximum Safe Operation Area
–10
2.0
100 µs
Drain Current
1.5
1.0
0.5
–1
DC
s
m
= s
m
PW 10
I D (A)
–3
1
Channel Power Dissipation Pch (W)
(on the aluminam ceramic board)
Maximum Channel Power
Dissipation Curve
O
pe
ra
–0.3
tio
n
–0.1 Operation in
this area is
limited by R DS(on)
–0.03
Ta = 25 °C
–0.01
0
50
100
150
Ambient Temperature
200
–0.1
–0.3
–1
–3
–10
Drain to Source Voltage
Ta (°C)
Typical Output Characteristics
–4.5 V –4 V
–2.0
–30
–100
V DS (V)
Typical Transfer Characteristics
V
Pulse Test
(A)
–3
ID
–1.6
–1.2
–2.5
V
–0.8
–0.4
–2 V
Drain Current
Drain Current
I D (A)
–3
.5
V
–5
–4
Ta = –25 °C
25 °C
–3
75 °C
–2
V DS = –10 V
–1
V GS = –1.5 V
0
–2
–4
–6
Drain to Source Voltage
–8
–10
V DS (V)
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
3
2SJ363
Static Drain to Source on State Resistance
vs. Drain Current
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
R DS(on) ( Ω)
–2 A
–0.6
Pulse Test
3
1
VGS = –4 V
0.3
–0.4
I D = –0.5 A
–0.2
–4
–8
–12
Gate to Source Voltage
0.03
Pulse Test
1.6
I D = –2 A
0.8
0
–40
–1 A
–0.5 A
VGS = –4 V
0.4
I D = –2 A
VGS = –10 V
0.01
–0.01 –0.03 –0.1 –0.3
Drain Current
–16
–20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
1.2
–10 V
0.1
–1 A
0
4
Drain to Source On State Resistance
R DS(on) ( Ω )
–0.8
–1 A
–0.5 A
0
40
80
120
160
Case Temperature Tc (°C)
–1
–3
I D (A)
–10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–1.0
10
5
Tc = –25 °C
2
1
25 °C
75 °C
0.5
0.2
0.1
–0.1 –0.2
V DS = –10 V
Pulse Test
–0.5 –1 –2
–5
Drain Current I D (A)
–10
2SJ363
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
100
VGS = 0
f = 1 MHz
Coss
50
Switching Time t (µs)
200
100
50
20
10
5
Ciss
2
1
0.5
–10
–20
tf
10
Crss
0
t d(off)
20
tr
5
V GS = –10 V
PW = 50 µs, duty < 1 %
2
0.2
0.1
–30
–40
t d(on)
1
–50
–0.05 –0.1 –0.2
Drain to Source Voltage V DS (V)
–0.5
Drain Current
–1
–2
–5
I D (A)
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
Reverse Drain Current I DR (A)
Capacitance C (pF)
500
–4
–3
–2
–10 V
–5 V
V GS = 0
–1
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
V SD (V)
5
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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