HITACHI 2SK522

2SK522
Silicon N-Channel Junction FET
Application
VHF amplifier, Mixer, local oscillator
Outline
SPAK
1
23
1. Gate
2. Source
3. Drain
2SK522
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
–30
V
Gate current
IG
10
mA
Drain current
ID
20
mA
Channel power dissipation
Pch
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V(BR)GDO
–30
—
—
V
I G = –100 µA, IS = 0
Gate cutoff current
I GSS
—
—
–10
nA
VGS = –0.5 V, VDS = 0
4
—
20
mA
VDS = 5 V, VGS = 0
1
Drain current
I DSS*
Gate to source cutoff voltage
VGS(off)
—
—
–3
V
VDS = 5 V, ID = 10 µA
Forward transfer admittance
y fs
8
10
—
mS
VDS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
6.8
—
pF
VDS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance
Crss
—
0.1
—
pF
Power gain
PG
20
27
—
dB
Noise figure
NF
—
1.7
2.5
dB
Note:
1. The 2SK522 is grouped by I DSS as follows.
Drain
D
E
F
I DSS
4 to 8
6 to 10
10 to 20
2
VDS = 5 V, VGS = 0,
f = 100 MHz
2SK522
Typical Output Characteristics (1)
10
300
0
–0.2 V
m
6
20
W
100
=
200
8
h
Drain Current ID (mA)
VGS = 0
Pc
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
–0.4
4
–0.6
2
–0.8
–1.0
0
0
50
100
150
Ambient Temperature Ta (°C)
10
20
30
40
Drain to Source Voltage VDS (V)
50
Typical Transfer Characteristics
Typical Output Characteristics (2)
15
10
Drain Current ID (mA)
Drain Current ID (mA)
VGS = 0
8
–0.2 V
6
–0.4
4
–0.6
2
0
–0.8
–1.0
1
2
3
4
Drain to Source Voltage VDS (V)
VDS = 5 V
10
F
E
5
D
5
0
–3.0
–2.0
–1.0
Gate to Source Voltage VGS (V)
0
3
2SK522
Ta = –25°C
25°C
75°C
10
5
VGS = 0
f = 1 kHz
0
5
10
Drain to Source Voltage VDS (V)
Input Capacitance vs.
Drain to Source Voltage
Input Capacitance Ciss (pF)
20
VGS = 0
f = 1 MHz
10
5
2
0.1
4
0.5 1.0
2
5
10
0.2
Drain to Source Voltage VDS (V)
15
Forward Transfer Admittance yfs (mS)
15
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
VDS = 5 V
f = 1 kHz
1.0
0.5
0.2
0.5 1.0
2
5
10
Drain Current ID (mA)
20
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Reverse Transfer Capacitance Crss (pF)
Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance vs.
Drain to Source Voltage
5
2
1.0
0.5
VGS = 0
f = 1 MHz
0.2
0.1
0.05
0.1
0.2
0.5 1.0
2
5
Drain to Source Voltage VDS (V)
10
2SK522
Power Gain vs.
Drain to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
30
100
VGS = 0
f = 1 MHz
Power Gain PG (dB)
50
20
10
VGS = 0
f = 100 MHz
20
10
5
2
0.1
0.2
0.5 1.0
2
5
10
Drain to Source Voltage VDS (V)
0
5
10
Drain to Source Voltage VDS (V)
15
Noise Figure vs.
Drain to Source Voltage
8
Noise Figure NF (dB)
Output Capacitance Coss (pF)
200
6
VGS = 0
f = 100 MHz
4
2
0
4
8
12
16
Drain to Source Voltage VDS (V)
5
2SK522
Power Gain and Noise Figure
Test Circuit
5.4
SG Output
Impedance
50
C1
S.G.
Shield
3.0
D.U.T.
L1
C2
L2 4,700
50
1,000
VDD
V.V
Unit R : Ω
C : pF
C1, C2 : 0 to 30pF Max Variable Air
L1 : 3.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
L2 : 4.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
6
Unit: mm
2.2 Max
0.6
0.6 Max
0.45 ± 0.1
14.5 Min
1.8 Max
3.2 Max
4.2 Max
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SPAK
—
—
0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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