2SK217 Silicon N-Channel Junction FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK217 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain current VGDO –30 V Drain current ID 20 mA Gate current IG 10 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate to drain breakdown voltage V(BR)GDO –30 — — V I G = –100 µA Gate cutoff current I GSS — — –10 nA VGS = –0.5 V, VDS = 0 Gate to source cutoff voltage VGS(off) — — –2.5 V VDS = 5 V, ID = 10 µA 2.5 — 12 mA VDS = 5 V, VGS = 0 1 Drain current I DSS* Forward transfer admittance |yfs| — 8.0 — mS VDS = 5 V, VGS = 0, f = 1 kHz Reverse transfer capacitance Crss — 0.1 — pF VDS = 5 V, VGS = 0, f = 1 MHz Note: 1. The 2SK217 is grouped by I DSS as follows. Grade C D E Mark ZC ZD ZE I DSS 2.5 to 5 4 to 8 6 to 12 2 2SK217 Typical Output Characteristics (1) 10 150 6 –0.4 W m 50 –0.2 V 0 15 100 = Drain Current ID (mA) VGS = 0 8 P ch Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 4 –0.6 –0.8 2 –1.0 0 0 50 100 150 Ambient Temperature Ta (°C) 10 20 30 40 50 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics (2) 15 10 Drain Current ID (mA) Drain Current ID (mA) VGS = 0 8 –0.2 V 6 –0.4 4 –0.6 2 0 –0.8 –1.0 1 2 3 4 Drain to Source Voltage VDS (V) 10 VDS = 5 V 5 E D C 5 0 –3 –2 –1 Gate to Source Voltage VGS (V) 0 3 2SK217 Ta = –25°C 25 75 10 5 VGS = 0 f = 1 kHz 0 5 10 Drain to Source Voltage VDS (V) 15 Input Capacitance vs. Drain to Source Voltage Input Capacitance Ciss (pF) 20 VGS = 0 f = 1 MHz 10 5 2 0.1 4 0.2 0.5 1.0 2 5 10 Drain to Source Voltage VDS (V) 50 20 10 5 2 1.0 0.5 0.2 VDS = 5 V f = 1 kHz 0.5 1.0 2 5 10 Drain Current ID (mA) 20 Reverse Transfer Capacitance vs. Drain to Source Voltage Reverse Transfer Capacitance Crss (pF) Forward Transfer Admittance yfs (mS) 15 Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance vs. Drain to Source Voltage 5 2 1.0 0.5 0.2 VGS = 0 f = 1 MHz 0.1 0.05 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 2SK217 Power Gain vs. Drain to Source Voltage Output Capacitance vs. Drain to Source Voltage 30 VGS = 0 f = 1 MHz 100 Power Gain PG (dB) Output Capacitance Coss (pF) 200 50 20 10 VGS = 0 f = 100 MHz 20 10 5 2 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 0 5 10 Drain to Source Voltage VDS (V) 15 Noise Figure vs. Drain to Source Voltage Noise Figure NF (dB) 8 VGS = 0 f = 100 MHz 6 4 2 0 4 8 12 16 Drain to Source Voltage VDS (V) Power Gain and Noise Figure Test Circuit 5.4 SG Output Impedance 50 C1 S.G. Shield 3.0 D.U.T. L1 C2 L2 4.700 50 VDD V.V Unit R : Ω C : pF C1, C2 : 0 to 30pF Variable Air L1 : 3.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia. L2 : 4.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia. 5 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 3 – 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.