HITACHI 2SK1579

2SK1579
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Suitable for low voltage operation
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SK1579
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified.)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
12
V
Gate to source voltage
VGSS
±7
V
Drain current
ID
2
A
4
A
2
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel power dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the almina ceramic board (12.5 × 20 × 0.7 mm)
2
2SK1579
Electrical Characteristics (Ta = 25°C unless otherwise specified.)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source cutoff current
I DSS
—
—
1
µA
VDS = 8 V, VGS = 0
Gate to source cutoff current
I GSS
—
—
±5
µA
VGS = ±6.5 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.4
V
VDS = 5 V, ID = 100 µA
Drain to source on resistance
(1)
RDS(on)1
—
0.36
0.7
Ω
VGS = 2.2 V, ID = 0.5 A
Drain to source on resistance
(2)
RDS(on)2
—
0.25
0.35
Ω
VGS = 4 V, ID = 1 A
DC forward transfer admittance |yfs|
1
2.5
—
S
VDS = 5 V, ID = 1 A,
∆VGS = 0.1 V
Input capacitance
Ciss
—
110
—
pF
VDS = 5 V, VGS = 0,
Reverse transfer capacitance
Crss
—
30
—
pF
f = 1 MHz
Output capacitance
Coss
—
150
—
pF
Turn-on time
t (on)
—
500
—
ns
I D = 0.2 A, VGS = 0,
Turn-off time
t (off)
—
1500
—
ns
Vin = 4 V, RL = 51 Ω
Note
1. Marking is “DY”.
3
2SK1579
Maximum Safe Operation Area
Power vs. Temperature Derating
50
0.5
DS
5
2
1
0.5
0.2
Op
PW = 10 ms
1 Shot
era
tio
n(
T
C
=2
5°
C)
50
100
Ambient Temperature Ta (°C)
150
Ta = 25°C
0.05
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5
4V
Typical Transfer Characteristics
5
3.5 V
3V
Ta = 25°C
Pulse Test
2.5 V
3
2
2V
1
Drain Current ID (A)
4
Drain Current ID (A)
DC
0.1
0
4
0
2
1
2
6
8
4
10
Drain to Source Voltage VDS (V)
Ta = –25°C
25°C
75°C
3
VGS = 1.5 V
4
(o
n)
10
O
is per
lim ati
ite on
d b in
y R this
1.0
ar
ea
20
Drain Current ID (A)
Channel Dissipation Pch (W)
1.5
0
VDS = 5 V
Pulse Test
1
3
4
2
Gate to Source Voltage VGS (V)
5
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source on State Resistance
vs. Gate to Source Voltage
0.5
0.4
ID = 0.1 A
0.2 A
0.3
0.5 A 1 A
0.2
Ta = 25°C
Pulse Test
0.1
2
1
3
4
Gate to Source Voltage VGS (V)
0
5
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
0.6
0.4
ID = 1 A
0.5 A
VGS = 2 V
ID = 0.5 A
VGS = 4 V
0.2
1A
0
–25
2A
25
0
50
75
Case Temperature TC (°C)
2V
1
VGS = 3 V
0.5
4V
0.2
0.1
0.05
0.2
0.5
5
2
10
1
Drain Current ID (A)
20
Forward Transfer Admittance
vs. Drain Current
1.0
0.8
Ta = 25°C
Pulse Test
2
Static Drain to Source on State
Resistance vs. Temperature
100
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source on State Resistance RDS (on) (Ω)
2SK1579
50
VDS = 5 V
Pulse Test
20
10
5
Ta = –25°C
25°C
75°C
2
1
0.05
0.2
0.5
2
10
1
5
Drain Current ID (A)
20
5
2SK1579
Reverse Drain Current vs.
Sourse to Drain Voltage
Typical Capacitance vs.
Drain to Source Voltage
500
Coss
Pulse Test
4
Capacitance C (pF)
Reverse Dratin Current IDR (A)
5
3
2
VGS = 2 V
1
VGS = 0
Ciss
100
Crss
50
20
10
VGS = 0
f = 1 MHz
5
0.1
0
0
200
1.0
2.0
Source to Drain Voltage VSD (V)
0.2
1
5
0.5
2
Drain to Source Voltage VDS (V)
Switching Characteristics
5,000
Switching Time t (ns)
VGS = 4 V, VDD = 10 V
PW = 2 µs, Duty cycle = 1%
2,000
1,000
500
td (off)
tf
200
100
50
0.05 0.1
6
tr
td (on)
0.5
1
2
0.2
Drain Current ID (A)
5
10
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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