HITACHI 2SK435

2SK435
Silicon N-Channel Junction FET
Application
Low frequency / High frequency amplifier
Outline
TO-92 (2)
1. Drain
2. Source
3. Gate
3
2
1
2SK435
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
22
V
Gate to source voltage
VGSO
–22
V
Drain current
ID
100
mA
Gate current
IG
10
mA
Channel power dissipation
Pch
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to source breakdown
voltage
V(BR)GSS
–22
—
—
V
I G = –10 µA, VDS = 0
Gate cutoff current
I GSS
—
—
–10
nA
VGS = –15 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
—
—
–2.5
V
VDS = 5 V, ID = 10 µA
6
—
40
mA
VDS = 5 V, VGS = 0, Pulse test
y fs
20
—
—
mS
VDS = 5 V, ID = 10 mA,
f = 1kHz
Input capacitance
Ciss
—
9.0
11.0
pF
VDS = 5 V, VGS = 0,
f = 1MHz
Reverse transfer capacitance
Crss
—
2.8
4.0
pF
VDS = 5 V, VGS = 0,
f = 1MHz
Noise figure
NF
—
0.5
3.0
dB
VDS = 5 V, ID = 1 mA,
f = 1kHz, Rg = 1kΩ
Drain current
I DSS*
Forward transfer admittance
Note:
1
1. The 2SK435 is grouped by I DSS as follows.
Grade
B
C
D
E
I DSS
6 to 14
12 to 22
18 to 30
26 to 40
2
2SK435
Maximum Channel Dissipation Curve
Typical Output Characteristics
20
VGS = 0V
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
400
300
200
100
0
16
–0.2
12
–0.3
8
–0.4
–0.5
4
0
50
100
150
200
Ambient Temperature Ta (°C)
–0.1
–0.6
2
4
6
8
10
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
100
VDS = 5 V
Forward Transfer Admittance
yfs (mS)
Drain Current ID (mA)
20
16
12
8
4
0
–1.25
–1.0 –0.75 –0.5 –0.25
Gate to Source Voltage VGS (V)
0
VDS = 5 V
f = 1 kHz
10
1.0
0.1
0.1
1.0
10
Drain Current ID (mA)
100
3
2SK435
Forwaed Transfer Admittance
vs. Gate to Source Voltage
Gate Cutoff Current
vs. Gate to Source Voltage
1,000
VDS = 5 V
f = 1 kHz
40
Gate Cutoff Current IGSS (pA)
Forward Transfer Admittance
yfs (mS)
50
30
20
10
0
–1.25
VDS = 0
100
10
1.0
0.1
–1.0 –0.75 –0.5 –0.25
Gate to Source Voltage VGS (V)
0
0
Input Capacitance vs.
Drain to Source Voltage
50
f = 1 MHz
VGS = 0
20
10
5
2
1
0.1
4
Reverse Transfer Capacitance
vs. Drain to Source Voltage
0.2
0.5
1.0
2
5
Drain to Source Voltage VDS (V)
10
Reverse Transfer Capacitance Crss (pF)
Input Capacitance Ciss (pF)
100
–10
–20
–30
–40
–50
Gate to Source Voltage VGS (V)
100
50
f = 1 MHz
VGS = 0
20
10
5
2
1
0.1
0.2
0.5 1.0
2
5
Drain to Source Voltage VDS (V)
10
2SK435
Noise Figure vs.
Signal Source Resistance
Noise Figure NF (dB)
12
VDS = 5 V
ID = 1mA
f = 1 kHz
10
8
6
4
2
0
10
100
1k
10 k
Signal Source Resistance Rg (Ω)
100 k
Noise Figure vs. Frequency
Noise Figure NF (dB)
12
VDS = 5 V
ID = 1mA
Rg = 1 kΩ
10
8
6
4
2
0
10
100
1k
10 k
Frequency f (Hz)
100 k
5
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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