2SK435 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK435 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 22 V Gate to source voltage VGSO –22 V Drain current ID 100 mA Gate current IG 10 mA Channel power dissipation Pch 300 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate to source breakdown voltage V(BR)GSS –22 — — V I G = –10 µA, VDS = 0 Gate cutoff current I GSS — — –10 nA VGS = –15 V, VDS = 0 Gate to source cutoff voltage VGS(off) — — –2.5 V VDS = 5 V, ID = 10 µA 6 — 40 mA VDS = 5 V, VGS = 0, Pulse test y fs 20 — — mS VDS = 5 V, ID = 10 mA, f = 1kHz Input capacitance Ciss — 9.0 11.0 pF VDS = 5 V, VGS = 0, f = 1MHz Reverse transfer capacitance Crss — 2.8 4.0 pF VDS = 5 V, VGS = 0, f = 1MHz Noise figure NF — 0.5 3.0 dB VDS = 5 V, ID = 1 mA, f = 1kHz, Rg = 1kΩ Drain current I DSS* Forward transfer admittance Note: 1 1. The 2SK435 is grouped by I DSS as follows. Grade B C D E I DSS 6 to 14 12 to 22 18 to 30 26 to 40 2 2SK435 Maximum Channel Dissipation Curve Typical Output Characteristics 20 VGS = 0V Drain Current ID (mA) Channel Power Dissipation Pch (mW) 400 300 200 100 0 16 –0.2 12 –0.3 8 –0.4 –0.5 4 0 50 100 150 200 Ambient Temperature Ta (°C) –0.1 –0.6 2 4 6 8 10 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain Current Typical Transfer Characteristics 100 VDS = 5 V Forward Transfer Admittance yfs (mS) Drain Current ID (mA) 20 16 12 8 4 0 –1.25 –1.0 –0.75 –0.5 –0.25 Gate to Source Voltage VGS (V) 0 VDS = 5 V f = 1 kHz 10 1.0 0.1 0.1 1.0 10 Drain Current ID (mA) 100 3 2SK435 Forwaed Transfer Admittance vs. Gate to Source Voltage Gate Cutoff Current vs. Gate to Source Voltage 1,000 VDS = 5 V f = 1 kHz 40 Gate Cutoff Current IGSS (pA) Forward Transfer Admittance yfs (mS) 50 30 20 10 0 –1.25 VDS = 0 100 10 1.0 0.1 –1.0 –0.75 –0.5 –0.25 Gate to Source Voltage VGS (V) 0 0 Input Capacitance vs. Drain to Source Voltage 50 f = 1 MHz VGS = 0 20 10 5 2 1 0.1 4 Reverse Transfer Capacitance vs. Drain to Source Voltage 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 Reverse Transfer Capacitance Crss (pF) Input Capacitance Ciss (pF) 100 –10 –20 –30 –40 –50 Gate to Source Voltage VGS (V) 100 50 f = 1 MHz VGS = 0 20 10 5 2 1 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 2SK435 Noise Figure vs. Signal Source Resistance Noise Figure NF (dB) 12 VDS = 5 V ID = 1mA f = 1 kHz 10 8 6 4 2 0 10 100 1k 10 k Signal Source Resistance Rg (Ω) 100 k Noise Figure vs. Frequency Noise Figure NF (dB) 12 VDS = 5 V ID = 1mA Rg = 1 kΩ 10 8 6 4 2 0 10 100 1k 10 k Frequency f (Hz) 100 k 5 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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