HITACHI 4AK27

4AK27
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-728 (Z)
1st. Edition
January 1999
Features
• Low on-resistance
R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
• 4V gate drive devices.
• High density mounting
Outline
SP-10
3
D
2G
1 S
5
D
4
G
7
D
6
G
12
34
56
78
9 10
9
D
8
G
S 10
1, 10.
Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
4AK27
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
5
A
20
A
Note1
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
5
A
Avalanche current
I AP
5
A
Avalanche energy1
EAR
2.1
mJ
28
W
4
W
Channel dissipation
Pch(Tc=25˚C)
Note2
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 4 devices poeration
3. Value at Tch=25˚C, Rg ≥ 50Ω
4AK27
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
100
µA
VDS = 50 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.25
V
I D = 1mA, VDS = 10V
Static drain to source on state resistance
RDS(on)
—
0.12
0.15
Ω
I D = 3A, VGS = 10V Note4
Static drain to source on state resistance
RDS(on)
—
0.15
0.2
Ω
I D = 3A, VGS = 4V Note4
Forward transfer admittance
|yfs|
3.0
5.5
—
S
I D = 3A, VDS = 10V Note4
Input capacitance
Ciss
—
390
—
pF
VDS = 10V
Output capacitance
Coss
—
190
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
45
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
10
—
ns
VGS = 10V, ID = 3A
Rise time
tr
—
42
—
ns
RL = 10Ω
Turn-off delay time
t d(off)
—
90
—
ns
Fall time
tf
—
55
—
ns
Body–drain diode forward voltage
VDF
—
1.0
—
V
I F = 5A, VGS = 0
Body–drain diode reverse recovery time
t rr
—
60
—
ns
I F = 5A, VGS = 0
diF/ dt =50A/µs
Note:
4.
Pulse test
3
4AK27
Main Characteristics
Maximum Channel Dissipation Curve
4
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
2
0
50
100
Maximum Channel Dissipation Curve
30
Channel Dissipation Pch (W)
Channel Dissipation Pch (W)
6
150
10
0
Typical Output Characteristics
(A)
ID
4
2.5 V
2
8
4
2
4
6
Drain to Source Voltage
8
10
V DS (V)
V DS = 10 V
Pulse Test
6
4
75 °C
2
VGS = 2 V
0
150
Typical Transfer Characteristics
Drain Current
I D (A)
Drain Current
3V
100
10
Pulse Test
6
50
Case Temperature Tc (°C)
10
8
4 Device Operation
3 Device Operation
2 Device
Operation
1 Device
Operation
20
Ambient Temperature Tc (°C)
10 V
5V
4V
3.5 V
Condition : Channel Dissipation of
each die is identical
0
–25 °C
Tc = 25 °C
1
2
3
Gate to Source Voltage
4
5
V GS (V)
4AK27
Static Drain to Source State Resistance
vs. Drain Current
0.8
5A
0.6
0.4
2A
0.2
0
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Pulse Test
ID=1A
2
4
6
Gate to Source Voltage
8
10
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
ID=5A
0.2
V GS = 4 V
0.1
10 V
0
–40
1
Pulse Test
0.5
0.2
4V
0.1
VGS = 10 V
0.05
0.1 0.2
V GS (V)
2A
1A
5A 1A
2A
0
40
80
120
160
Case Temperature Tc (°C)
0.5 1 2
5 10 20
Drain Current I D (A)
50
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Sasuration Voltage
V DS(on) (V)
1.0
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
20
10
V DS = 10 V
Pulse Test
5
Tc = –25 °C
25 °C
75 °C
2
1
0.5
0.1
0.2
0.5
1
2
5
10
Drain Current I D (A)
5
4AK27
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
1000
di/dt = 50 A/µs, Ta = 25 °C
V GS = 0, Pulse Test
200
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
5
0.1
Crss
VGS = 0
f = 1 MHz
12
VDS
VGS
8
I D= 5 A
4
0
20
500
Switching Time t (ns)
16
4
8
12
16
Gate Charge Qg (nc)
20
30
40
50
Drain to Source Voltage V DS (V)
V GS (V)
V DD = 50 V
25 V
10 V
V DD = 10 V
25 V
50 V
10
0
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
6
50
Switching Characteristics
20
80
0
100
0.2
0.5
1
2
5
10
Reverse Drain Current I DR (A)
Dynamic Input Characteristics
20
Coss
10
100
40
200
20
10
60
Ciss
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
200
t d(off)
100
50
tf
20
tr
t d(on)
10
5
0.1
0.2
0.5
1
Drain Current
2
5
I D (A)
10
4AK27
Reverse Drain Current vs.
Source to Drain Voltage
Maximun Avalanche Energy vs.
Channel Temperature Derating
Repetive Avalanche Energy E AR (mJ)
Reverse Drain Current I DR (A)
10
Pulse Test
8
6
10 V
V GS = 0, –5 V
4
5V
2
0
0.4
0.8
1.2
1.6
Drain to Source Voltage
2.5
I AP = 5 A
V DD = 25 V
duty < 0.1 %
Rg > 50 Ω
2
1.5
1
0.5
2.0
V DS (V)
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit and Waveform
V DS
Monitor
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
7
4AK27
Package Dimensions
Unit: mm
26.5 ± 0.3
1.82
2.54
1
8
2
3
4
0.55 ± 0.1
1.4
5
6
7
10.5 ± 0.5
2.5
10.0 ± 0.3
4.0 ± 0.2
8
9
10
1.5 ± 0.2
+0.1
0.55 –0.06
Hitachi Code
JEDEC
EIAJ
SP-10
—
—
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.