TIL3020 THRU TIL3023 OPTOCOUPLERS/OPTOISOLATORS SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995 • • • • • • 400-V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically-Coupled Silicon Triac Driver (Bilateral Switch) UL Recognized . . . File Number E65085 High Isolation . . . 3535 V peak Output Driver Designed for 220 V AC Standard 6-Pin Plastic DIP TIL3020 – TIL3023 . . . PACKAGE (TOP VIEW) ANODE CATHODE NC 1 6 2 5 3 4 MAIN TERM TRIAC SUB† MAIN TERM † Do not connect this terminal NC – No internal connection description Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound. The case withstands soldering temperature with no deformation. Device performance characteristics remain stable when operated in high-humidity conditions. logic diagram 1 6 2 4 absolute maximum ratings at 25°C free-air (unless otherwise noted)† Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . 3.535 kV Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V Output on-state current, total rms value (50-60 Hz, full sine wave): TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 mA Continuous power dissipation at (or below) 25°C free-air temperature: Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 100°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating. 2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C. 3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C. 4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C. Copyright 1995, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7–1 TIL3020 THRU TIL3023 OPTOCOUPLERS/OPTOISOLATORS SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995 electrical characteristics 25°C free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS IR VF Static reverse current IDRM dv/dt Repetitive off-state current, either direction dv/dt(c) Critical rate of rise of communication voltage MIN VR = 3 V IF = 10 mA static forward voltage Critical rate of rise of off-state voltage VDRM = 250 V, See Figure 1 See Note 5 IO = 15 mA, See Figure 1 Input trigger current, current either direction VTM IH Peak on-state voltage, either direction TIL3021 TIL3022 MAX UNIT 0.05 100 µA 1.2 1.5 V 10 100 100 TIL3020 IFT TYP Output supply voltage = 3 V TIL3023 ITM = 100 mA Holding current, either direction 0.15 V/µs 15 30 8 15 5 10 3 5 1.4 3 100 NOTE 5: Test voltage must be applied at a rate no higher than 12 V/µs. PARAMETER MEASUREMENT INFORMATION VCC 1 6 Vin = 30 V rms 4 2 Input (see Note A) RL 10 kΩ 2N3904 NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input of 0 volts. The frequency of Vin is increased until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula: ń + 2 Ǹ2 p f Vin dv dt The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input pulses., the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs can then be used to calculate the dv/dt(c) according to the formula shown above. Figure 1. Critical Rate of Rise Test Circuit 7–2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 nA V/µs mA V µA TIL3020 THRU TIL3023 OPTOCOUPLERS/OPTOISOLATORS SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995 TYPICAL CHARACTERISTICS EMITTING DIODE TRIGGER CURRENT (NORMALIZED) vs FREE-AIR TEMPERATURE ON-STATE CHARACTERISTICS 800 Output tw = 800 µs IF = 20 mA f = 60 Hz TA = 25°C 600 I TM – Peak On-State Current – mA 1.3 1.2 1.1 1 0.9 0.8 – 50 400 200 0 – 200 – 400 – 600 – 25 0 25 50 75 – 800 –3 100 TA – Free-Air Temperature – °C –2 –1 0 1 2 VTM – Peak On-State Voltage – V Figure 2 3 Figure 3 NONREPETITIVE PEAK ON-STATE CURRENT vs PULSE DURATION I TSM – Nonrepetitive Peak On-State Current – mA Emitting Diode Trigger Current (Normalized) 1.4 3 TA = 25°C 2 1 0 0.01 0.1 1 10 100 tw – Pulse Duration – ms Figure 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7–3 TIL3020 THRU TIL3023 OPTOCOUPLERS/OPTOISOLATORS SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995 APPLICATION INFORMATION Rin VCC RL TIL3020, TIL3023 1 6 180 Ω 220 V, 60 Hz 2 RL 4 Figure 5. Resistive Load Rin VCC ZL TIL3020, TIL3023 1 6 180 Ω 2.4 kΩ 0.1 µF 2 220 V, 60 Hz 4 IGT ≤ 15 mA Figure 6. Inductive Load With Sensitive-Gate Traic Rin VCC ZL TIL3020, TIL3023 1 6 180 Ω 1.2 kΩ 0.2 µF 2 4 15 mA < IGT < 50 mA Figure 7. Inductive Load With Nonsensitive-Gate Triac 7–4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 220 V, 60 Hz TIL3020 THRU TIL3023 OPTOCOUPLERS/OPTOISOLATORS SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995 MECHANICAL INFORMATION 9,40 (0.370) 8,38 (0.330) CL CL 6 5 4 1 2 3 Index Dot (see Note B) 7,62 (0.300) T.P. (see Note A) 6,61 (0.260) 6,09 (0.240) (see Note C) 1,78 (0.070) MAX 6 Places 5,46 (0.215) 2,92 (0.115) Seating Plane 1,78 (0.070) 0,51 (0.020) 105° 90° 0°– 15° 1,78(0.070) 3,17 (0.125) 0.010 (0,25) NOM 2,29 (0.090) 1,27 (0.050) 4 Places 2,54 (0.100) T.P. (see Note A) 1,01 (0.040) MIN 0,534 (0.021) 0,381 (0.015) 6 Places NOTES: A. Leads are within 0,13 (0.005) radius of true position (T.P.) with maximum material condition and unit installed. B. Pin 1 identified by index dot. C. Terminal connections: 1. Anode (part of the infrared-emitting diode) 2. Cathode (part of the infrared-emitting diode) 3. No internal connection 4. Main terminal (part of the phototransistor) 5. Triac Substrate (DO NOT connect) (part of the phototransistor) 6. Main terminal (part of the phototransistor) D. The dimensions given fall within JEDEC MO-001 AM dimensions. E. All linear dimensions are given in millimeters and parenthetically given in inches. Figure 8. Mechanical Information POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7–5 7–6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (“Critical Applications”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. 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