TI TIL3020

TIL3020 THRU TIL3023
OPTOCOUPLERS/OPTOISOLATORS
SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995
•
•
•
•
•
•
400-V Phototriac Driver Output
Gallium-Arsenide-Diode Infrared Source
and Optically-Coupled Silicon Triac Driver
(Bilateral Switch)
UL Recognized . . . File Number E65085
High Isolation . . . 3535 V peak
Output Driver Designed for 220 V AC
Standard 6-Pin Plastic DIP
TIL3020 – TIL3023 . . . PACKAGE
(TOP VIEW)
ANODE
CATHODE
NC
1
6
2
5
3
4
MAIN TERM
TRIAC SUB†
MAIN TERM
† Do not connect this terminal
NC – No internal connection
description
Each device consists of a gallium-arsenide
infrared-emitting diode optically coupled to a
silicon phototriac mounted on a 6-pin lead frame
encapsulated within an electrically nonconductive
plastic compound. The case withstands soldering
temperature with no deformation. Device performance characteristics remain stable when
operated in high-humidity conditions.
logic diagram
1
6
2
4
absolute maximum ratings at 25°C free-air (unless otherwise noted)†
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . 3.535 kV
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V
Output on-state current, total rms value (50-60 Hz, full sine wave):
TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Output driver nonrepetitive peak on-state current
(tw = 10 ms, duty cycle = 10%, see Figure 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 mA
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW
Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 100°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.
Copyright  1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7–1
TIL3020 THRU TIL3023
OPTOCOUPLERS/OPTOISOLATORS
SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995
electrical characteristics 25°C free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR
VF
Static reverse current
IDRM
dv/dt
Repetitive off-state current, either direction
dv/dt(c)
Critical rate of rise of communication voltage
MIN
VR = 3 V
IF = 10 mA
static forward voltage
Critical rate of rise of off-state voltage
VDRM = 250 V,
See Figure 1
See Note 5
IO = 15 mA,
See Figure 1
Input trigger current,
current either direction
VTM
IH
Peak on-state voltage, either direction
TIL3021
TIL3022
MAX
UNIT
0.05
100
µA
1.2
1.5
V
10
100
100
TIL3020
IFT
TYP
Output supply voltage = 3 V
TIL3023
ITM = 100 mA
Holding current, either direction
0.15
V/µs
15
30
8
15
5
10
3
5
1.4
3
100
NOTE 5: Test voltage must be applied at a rate no higher than 12 V/µs.
PARAMETER MEASUREMENT INFORMATION
VCC
1
6
Vin = 30 V rms
4
2
Input
(see Note A)
RL
10 kΩ
2N3904
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input of 0 volts. The frequency of Vin is increased until
the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula:
ń + 2 Ǹ2 p f Vin
dv dt
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and
increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input
pulses., the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs
can then be used to calculate the dv/dt(c) according to the formula shown above.
Figure 1. Critical Rate of Rise Test Circuit
7–2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
nA
V/µs
mA
V
µA
TIL3020 THRU TIL3023
OPTOCOUPLERS/OPTOISOLATORS
SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995
TYPICAL CHARACTERISTICS
EMITTING DIODE TRIGGER CURRENT (NORMALIZED)
vs
FREE-AIR TEMPERATURE
ON-STATE CHARACTERISTICS
800
Output tw = 800 µs
IF = 20 mA
f = 60 Hz
TA = 25°C
600
I TM – Peak On-State Current – mA
1.3
1.2
1.1
1
0.9
0.8
– 50
400
200
0
– 200
– 400
– 600
– 25
0
25
50
75
– 800
–3
100
TA – Free-Air Temperature – °C
–2
–1
0
1
2
VTM – Peak On-State Voltage – V
Figure 2
3
Figure 3
NONREPETITIVE PEAK ON-STATE CURRENT
vs
PULSE DURATION
I TSM – Nonrepetitive Peak On-State Current – mA
Emitting Diode Trigger Current (Normalized)
1.4
3
TA = 25°C
2
1
0
0.01
0.1
1
10
100
tw – Pulse Duration – ms
Figure 4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7–3
TIL3020 THRU TIL3023
OPTOCOUPLERS/OPTOISOLATORS
SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995
APPLICATION INFORMATION
Rin
VCC
RL
TIL3020, TIL3023
1
6
180 Ω
220 V, 60 Hz
2
RL
4
Figure 5. Resistive Load
Rin
VCC
ZL
TIL3020, TIL3023
1
6
180 Ω
2.4 kΩ
0.1 µF
2
220 V, 60 Hz
4
IGT ≤ 15 mA
Figure 6. Inductive Load With Sensitive-Gate Traic
Rin
VCC
ZL
TIL3020, TIL3023
1
6
180 Ω
1.2 kΩ
0.2 µF
2
4
15 mA < IGT < 50 mA
Figure 7. Inductive Load With Nonsensitive-Gate Triac
7–4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
220 V, 60 Hz
TIL3020 THRU TIL3023
OPTOCOUPLERS/OPTOISOLATORS
SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995
MECHANICAL INFORMATION
9,40 (0.370)
8,38 (0.330)
CL
CL
6
5
4
1
2
3
Index Dot
(see Note B)
7,62 (0.300) T.P.
(see Note A)
6,61 (0.260)
6,09 (0.240)
(see Note C)
1,78 (0.070) MAX
6 Places
5,46 (0.215)
2,92 (0.115)
Seating Plane
1,78 (0.070)
0,51 (0.020)
105°
90°
0°– 15°
1,78(0.070)
3,17 (0.125)
0.010 (0,25) NOM
2,29 (0.090)
1,27 (0.050)
4 Places
2,54 (0.100) T.P.
(see Note A)
1,01 (0.040) MIN
0,534 (0.021)
0,381 (0.015)
6 Places
NOTES: A. Leads are within 0,13 (0.005) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. Terminal connections:
1. Anode (part of the infrared-emitting diode)
2. Cathode (part of the infrared-emitting diode)
3. No internal connection
4. Main terminal (part of the phototransistor)
5. Triac Substrate (DO NOT connect) (part of the phototransistor)
6. Main terminal (part of the phototransistor)
D. The dimensions given fall within JEDEC MO-001 AM dimensions.
E. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 8. Mechanical Information
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• DALLAS, TEXAS 75265
7–5
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IMPORTANT NOTICE
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product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
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potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
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right of TI covering or relating to any combination, machine, or process in which such semiconductor products
or services might be or are used.
Copyright  1996, Texas Instruments Incorporated