TI MOC3012

MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
D
D
D
D
D
D
D
250 V Phototriac Driver Output
Gallium-Arsenide-Diode Infrared Source
and Optically Coupled Silicon Traic Driver
(Bilateral Switch)
UL Recognized . . . File Number E65085
High Isolation . . . 7500 V Peak
Output Driver Designed for 115 Vac
Standard 6-Pin Plastic DIP
Directly Interchangeable with Motorola
MOC3009, MOC3010, MOC3011, and
MOC3012
typical 115 Vac(rms) applications
D Solenoid/Valve Controls
D Lamp Ballasts
D Interfacing Microprocessors to 115-Vac
Peripherals
D Motor Controls
D Incandescent Lamp Dimmers
MOC30209– MOC3012 . . . PACKAGE
(TOP VIEW)
ANODE
CATHODE
NC
1
6
2
5
3
4
MAIN TERM
TRIAC SUB†
MAIN TERM
† Do not connect this terminal
NC – No internal connection
logic diagram
1
6
2
4
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7.5 kV
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V
Output on-state current, total rms value (50-60 Hz, full sine wave): TA = 25°C . . . . . . . . . . . . . . . . . . . 100 mA
TA = 70°C . . . . . . . . . . . . . . . . . . . . 50 mA
Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 7) . . . . . 1.2 A
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW
Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 100°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150°C
Lead temperature 1,6 (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
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1
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR
VF
Static reverse current
VR = 3 V
IF = 10 mA
IDRM
dv/dt
Repetitive off-state current, either direction
dv/dt(c)
Static forward voltage
See Note 5
Critical rate of rise of off-state voltage
VDRM = 250 V,
See Figure 1
Critical rate of rise of commutating voltage
IO = 15 mA,
See Figure 1
Input trigger
gg current,, either
direction
MOC3010
Output supply voltage = 3 V
MOC3011
TYP
MAX
UNIT
0.05
100
µA
1.2
1.5
V
10
100
nA
12
MOC3009
IFT
MIN
0.15
V/µs
15
30
8
15
5
10
MOC3012
VTM
IH
V/µs
mA
5
Peak on-state voltage, either direction
ITM = 100 mA
1.8
Holding current, either direction
100
3
V
µA
NOTE 5: Test voltage must be applied within dv/dt rating.
PARAMETER MEASUREMENT INFORMATION
VCC
1
6
Vin = 30 Vrms
2
4
10 kΩ
Input
(see Note A)
2N3904
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 V. The frequency of Vin is increased until the
phototriac just turns on. This frequency is then used to calculate the dv/dt according to the formula:
ń + 2 Ǹ2 πfVin
dv dt
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing
the frequency of Vin until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the
frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used
to calculate the dv/dt(c) according to the formula shown above.
Figure 1. Critical Rate of Rise Test Circuit
2
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MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
EMITTING-DIODE TRIGGER CURRENT (NORMALIZED)
vs
FREE-AIR TEMPERATURE
ON-STATE CHARACTERISTICS
800
600
I TM – Peak On-State Current – mA
1.3
1.2
1.1
1
0.9
400
Output tw = 80 µs
IF = 20 mA
f = 60 Hz
TA = 25°C
200
0
– 200
– 400
– 600
0.8
– 50
– 25
0
25
50
75
– 800
–3
100
–2
–1
0
1
2
VTM – Peak On-State Voltage – V
TA Free-Air Temperature – °C
Figure 2
Figure 3
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
OFF-STATE dv/dt AND COMMUTATING dv/dt(c)
vs
LOAD RESISTANCE
OFF-STATE dv/dt AND COMMUTATING dv/dt(c)
vs
FREE-AIR TEMPERATURE
dv/dt
dv/dt(c)
0.2
10
0.16
Commutating
8
0.12
6
Commutating dv/dt – V/ µ s
0.20
Off-State dv/dt – V/µ s
10
Off-State
12
Off-State dv/dt – V/µ s
0.24
12
0.24
14
TA = 25°C
See Figure 1
3
8
0.16
6
0.12
4
0.08
RL = 510 Ω
0.08
2
0.04
0
25
RL = 2 kΩ
Commutating dv/dt – V/ µ s
Emitting-Diode Trigger Current (Normalized)
1.4
0.04
dv/dt
dv/dt(c)
4
0
0.4
1.6
0.8
1.2
RL – Load Resistance – kΩ
2
50
75
TA – Free-Air Temperature – °C
Figure 4
0
100
Figure 5
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MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
RMS APPLIED VOLTAGE
(FOR dv/dt(c) = 0.15 V/µs)
vs
FREQUENCY
NONREPETITIVE PEAK ON-STATE CURRENT
vs
PULSE DURATION
V I – RMS Applied Voltage – V
400
I TSM – Nonrepetitive Peak On-State Current – mA
1000
RL = 1 kΩ
TA = 25°C
dv/dt = 2 √ 2πf VI
See Figure 1
100
40
dv/dt = 0.15 V/µs
10
4
1
100
400
1k
4k
10 k
40 k
100 k
3
TA = 25°C
2
1
0
0.01
f – Frequency – Hz
1
10
tw – Pulse Duration – ms
Figure 6
4
0.1
Figure 7
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100
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
APPLICATIONS INFORMATION
RL
MOC3009, MOC3012
Rin
1
VCC
6
180 Ω
120 V, 60 Hz
2
4
Figure 8. Resistive Load
Rin
VCC
ZL
MOC3009, MOC3012
1
6
180 Ω
2.4 kΩ
0.1 µF
2
120 V, 60 Hz
4
IGT ≤ 15 mA
Figure 9. Inductive Load With Sensitive-Gate Triac
Rin
VCC
ZL
MOC3009, MOC3012
1
6
180 Ω
1.2 kΩ
0.2 µF
2
120 V, 60 Hz
4
15 mA < IGT < 50 mA
Figure 10. Inductive Load With Nonsensitive-Gate Triac
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MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
MECHANICAL INFORMATION
Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac mounted
on a 6-terminal lead frame encapsulated within an electrically nonconductive plastic compound. The case can
withstand soldering temperature with no deformation and device performance characteristics remain stable when
operated in high-humidity conditions.
9,40 (0.370)
8,38 (0.330)
6
5
4
1
2
3
Index Dot
(see Note B)
C
L
C
L
7,62 (0.300) T.P.
(see Note A)
5,46 (0.215)
2,95 (0.116)
6,61 (0.260)
6,09 (0.240)
105°
90°
0,305 (0.012)
0,203 (0.008)
NOTES: A.
B.
C.
D.
1,78 (0.070)
0,51 (0.020)
Seating Plane
1,01 (0.040) MIN
3,81 (0.150)
3,17 (0.125)
2,29 (0.090)
1,27 (0.050)
4 Places
2,54 (0.100) T.P.
(see Note A)
0,534 (0.021)
0,381 (0.015)
6 Places
Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material condition and unit installed.
Pin 1 identified by index dot.
The dimensions given fall within JEDEC MO-001 AM dimensions.
All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 11. Packaging Specifications
6
1,78 (0.070) MAX
6 Places
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
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BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
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intellectual property right of TI covering or relating to any combination, machine, or process in which such
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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  1998, Texas Instruments Incorporated