HRW0703A Silicon Schottky Barrier Diode for Rectifying ADE-208-110E (Z) Rev 5 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRW0703A S8 MPAK Outline 3 2 (Top View) 1 1 NC 2 Anode 3 Cathode HRW0703A Absolute Maximum Ratings (Ta = 25°C) Item Symbol *1 RRM Repetitive peak reverse voltage V Forward current I F*1 *2 Value Unit 30 V 700 mA 5 A Non-Repetitive peak forward surge current IFSM Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Note Note 1. See from Fig.4 to Fig.7, with polyimide board 2. 50Hz sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.50 V I F = 700 mA Reverse current IR — — 100 µA VR = 30V Capacitance C — 150 — pF VR = 0V, f = 1MHz Thermal resistance Rth1(j-a) 390 °C/W Polyimide board *1 Rth2(j-a) 290 °C/W Ceramic board *2 Note 1. Polyimide board 0.8 20hx15wx0.8t 3.0 1.5 1.5 Unit: mm 1.5 Note 2. Ceramic board 2.0 20hx15wx0.65t 4.2 2.0 2 Unit: mm HRW0703A Main Characteristic 10 -1 10 Pulse test 10 Reverse current I R (A) Forward current I F (A) Pulse test 1.0 Ta=75°C Ta=25°C 10 -1 -2 10 -3 Ta=75°C 10 -4 10 -5 Ta=25°C 10 -2 0 0.2 0.4 0.6 0.8 1.0 Forward voltage V F (V) -6 0 10 20 30 40 50 Reverse voltage VR (V) Fig.1 Forward current Vs. Forward voltage 10 10 Fig.2 Reverse current Vs. Reverse voltage 2 Capacitance C (pF) f=1MHz Pulse test 10 1.0 1.0 10 Reverse voltage VR (V) 40 Fig.3 Capacitance Vs. Reverse voltage 3 HRW0703A Main Characteristic 1.6 0A D=1/6 t T t Tj =25°C D= T\ 0.60 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0.80 D=1/3 D=1/2 DC 0.40 Sin( ˘=180°) 0.20 0 0.4 0.2 0.6 Fig4. Forward power dissipation 0.8 Vs. Forward current VR=VRRM/2 Tj =125°C Ceramic board 0.60 Sin 0.40 D=1/2 0.20 D=1/3 D=1/6 0 -25 0 25 50 75 100 125 D=2/3 0.8 D=1/2 Sin( ˘=180°) 0.4 0 5 10 15 20 25 30 Reverse voltage @ @VR @(V) Fig5. Reverse power dissipation 0.80 @Io (A) DC T Tj =125°C @ @IF @(A) Average rectified current @Io (A) 1.2 1.0 0.80 Average rectified current D=5/6 t D= \ T t 0 0 Forward current 4 0V Vs. Reverse voltage VR=VRRM/2 Tj =125°C Polyimide board 0.60 DC 0.40 Sin 0.20 D=1/2 D=1/6 0 -25 D=1/3 0 25 50 75 100 125 Ambient temperature Ta ( °C) Ambient temperature Ta ( °C) Fig.6 Average rectified current Vs. Ambient temperature Fig.7 Average rectified current Vs. Ambient temperature HRW0703A Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit : mm + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 2 Anode 3 Cathode + 0.2 1.9 1 NC 1.1 – 0.1 1 0.95 0 – 0.10 0.1 0.65 +– 0.3 2 0.95 0.3 S 8 1.5 3 Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK(1) — SC-59A 0.011 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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