HITACHI PF0121

PF0121
MOS FET Power Amplifier Module for GSM Mobile Phone
ADE-208-097A (Z)
2nd Edition
July 1996
Application
For GSM CLASS2 890 to 915 MHz
Features
• Low power control current: 0.9 mA Typ
• High speed switching: 1.5 µsec Typ
• Wide power control range: 100 dB Typ
Pin Arrangement
• RF-B2
5
4
3
2
5
1
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND
PF0121
Internal Diagram and External Circuit
G
G
GND
GND
Pin1
Pin
Pin2
VAPC
Z1
FB1
Pin
Pin3
VDD
C2
FB2
VAPC
Pin4
Pout
C1
VDD
Z2
Pout
C1 = 0.01 µF (Ceramic chip capacitor)
C2 = 330 µF (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)
Absolute Maximum Ratings (Tc = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
VDD
17
V
Supply current
I DD
6
A
APC voltage
VAPC
8
V
Input power
Pin
20
mW
Operating case temperature
Tc (op)
–30 to +110
°C
Storage temperature
Tstg
–40 to +110
°C
2
PF0121
Electrical Characteristics (Tc = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
I DS
—
—
500
µA
VDD = 17 V, VAPC = 0 V
Total efficiency
ηT
30
35
—
%
Pin = 2 mW, VDD = 12.5 V,
2nd harmonic distortion
2nd H.D.
—
–50
–40
dBc
Pout = 13 W (at APC controlled),
3rd harmonic distortion
3rd H.D.
—
–55
–45
dBc
RL = Rg = 50 Ω, Tc = 25°C
Input VSWR
VSWR (in) —
2
3
—
Output power (1)
Pout (1)
17
23
—
W
Pin = 2 mW, VDD = 12.5 V, VAPC = 7 V,
RL =Rg = 50 Ω, Tc = 25°C
Output power (2)
Pout (2)
9
12
—
W
Pin = 2 mW, VDD = 10.3V, VAPC = 7 V,
RL = Rg = 50 Ω, Tc = 80°C
Isolation
—
—
–60
–40
dBm
Pin = 2 mW, VDD = 12.5 V, VAPC = 0.5 V,
RL = Rg = 50 Ω, Tc = 25°C
Switching time
t r, t f
—
1.5
2
µs
Pin = 2 mW, VDD = 12.5 V, Pout = 13 W,
RL = Rg = 50 Ω, Tc = 25°C
Stability
—
No parasitic oscillation —
Pin = 2 mW, VDD = 12.5 V,
Pout ≤ 13 W (at APC controlled),
Rg = 50 Ω, Tc = 25°C,
Output VSWR = 20:1 All phases
Test System Diagram
S.G
VAPC VDD
Power
Meter
L.P.F
Spectrum
Analyzer
3dB
ATT
Test
Fixture
Directional
Coupler
RF SW.
Directional
Coupler
Phase
Shifter
Power Meter
Short
3
PF0121
Switching Time Test Diagram
VDD=12.5 V
S.G
Z=50Ω
Pin
D.U.T
P.G
f=10 kHz
Pout
VAPC
1SS106
100p
Oscillo
Scope
2p
2p
50%
1SS106
50%
VAPC
2.2 kΩ
95%
Vout
Vout
4
Duty=1/8
Power
Meter
5%
tr
tf
PF0121
Test Fixture Pattern
Unit: mm
26.5
28
2.88
6 4
4
1.5
3.5
2.88
16
4.5 3
VAPC
3.5
16.5
4
15
4
4
2.88
2.88
80
VDD
100
Grass Epoxy Double sided PCB
(t = 1.6 mm, εr = 4.8)
C1=0.01µF (Ceramic Chip Capacitor)
C2=330µF (Aluminum Electrolyte Capacitor)
L1=L2 : BLO2RN1-R62 (Manufacturer : MURATA) or equivalent (Ferrite Bead Inductor)
The coefficient of RF line loss in the P.C.B is showed bellow.
1/ (S21)2 = 1/ (0.9805)2 = 1.068
Mechanical Characteristics
Item
Conditions
Spec
Torque for screw up the heatsink flange
M3 Screw Bolts
4 to 6 kg•cm
Warp size of the heatsink flange: S
S=0
+0.3/–0 mm
S
5
PF0121
Note for Use
• Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm.
• It should not be existed any dust between module and heatsink.
• MODULE should be separated from PCB less than 1.5 mm.
Soldering temperature and soldering time should be less than 230°C, 10 sec.
(Soldering position spaced from the root point of the lead frame: 2 mm)
• Recommendation of thermal joint compounds is TYPE G746.
(Manufacturer: Shin-Etsu Chemical, Co., Ltd.)
• To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc.
should be grounded.
• Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts.
• Don't solder the flange directly.
• It should make the lead frame as straight as possible.
• The module should be screwed up before lead soldering.
• It should not be given mechanical and thermal stress to lead and flange of the module.
• When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics
should be evaluated enough.
• Don't washing the module except lead pins.
• To get good stability, ground impedance between the module GND flange and PCB GND pattern should
be designed as low as possible.
6
PF0121
Characteristic Curves
VAPC, ηT, VSWR (in) vs. VDD (1)
6
10
50
f=890 MHz, Pin=2 mW
Pout=13 W, Tc=25°C, Rg=Rl=50 Ω
3
Apc Voltage VAPC (V)
V.S.W.R. (in)
4
40
ηT
6
30
VAPC
4
2
2
1
0
10
20
VSWRin
11
12
13
14
Efficiency ηT (%)
8
5
10
15
0
16
Supply Voltage VDD (V)
VAPC, ηT, VSWR (in) vs. VDD (2)
6
10
50
f=915 MHz, Pin=2 mW
Pout=13 W, Tc=25°C, Rg=Rl=50 Ω
8
3
2
40
ηT
6
30
VAPC
4
20
2
Efficiency ηT (%)
4
Apc Voltage VAPC (V)
V.S.W.R. (in)
5
10
VSWRin
1
0
10
11
12
13
14
15
0
16
Supply Voltage VDD (V)
7
PF0121
50
35
f = 890 MHz
V
=12.5
V
DD
Pin = 2 mW
VDD=15.6 V
Tc = 25°C
30
Rg = Rl = 50Ω
10.8 V
25
15.6 V
12.5 V
Efficiency ηT (%)
40
30
20
10.8 V
15
20
ηT
10
Output Power Pout (W)
ηT, Pout vs. VAPC (1)
10
5
Pout
0
0
0
4
2
6
8
Apc Voltage VAPC (V)
ηT, Pout vs. VAPC (2)
f = 915 MHz
Pin = 2 mW
Tc = 25°C
Rg = Rl = 50Ω
Efficiency ηT (%)
40
35
VDD=15.6 V
VDD=15.6 V
30
12.5 V
25
10.8 V
12.5 V
30
20
10.8 V
ηT
15
20
10
10
Pout
5
0
0
0
2
4
Apc Voltage VAPC (V)
8
6
8
Output Power Pout (W)
50
PF0121
VAPC, ηT, VSWR (in) vs. Pin (1)
6
10
50
f=890 MHz, VDD=12.5 V,
Pout=13 W, Tc=25°C, Rg=Rl=50 Ω
8
3
40
ηT
6
30
4
20
Efficiency ηT (%)
4
Apc Voltage VAPC (V)
V.S.W.R. (in)
5
VAPC
2
2
1
0
10
VSWRin
0
2
6
4
8
0
10
Input Power Pin (mW)
VAPC, ηT, VSWR (in) vs. Pin (2)
6
10
50
f=915 MHz, VDD=12.5 V,
Pout=13 W, Tc=25°C, Rg=Rl=50 Ω
3
Apc Voltage VAPC (V)
V.S.W.R. (in)
4
40
ηT
6
30
4
20
Efficiency ηT (%)
8
5
VAPC
2
2
1
0
10
VSWRin
0
2
4
6
8
0
10
Input Power Pin (mW)
9
PF0121
VAPC, ηT, VSWR (in) vs. Frequency
6
10
50
Pin=2 mW, VDD=12.5 V,
Pout=13 W, Tc=25°C, Rg=Rl=50 Ω
3
40
ηT
6
30
4
20
VAPC
2
2
1
0
890
10
VSWRin
895
900
905
Frequency f (MHz)
10
910
0
915
Efficiency ηT (%)
4
8
Apc Voltage VAPC (V)
V.S.W.R. (in)
5
PF0121
Package Dimensions
60.5 ± 0.5
57.5 ± 0.5
3
13.0 ± 1
49.8 ± 0.5
0.25
2.3
0.6
5.0 +– 0.3
0.5
4
3.3
2
5±1
1
R1.6
6.35 ± 0.5
11.0 ± 0.3
12.7 ± 0.5
Unit: mm
9.2 ± 1
8.0 ± 1
22.0 ± 1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
RF-B2
—
—
16 g
11
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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