MICROWAVE CORPORATION HMC315 v01.0701 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC315 is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation Gain: 15 dB • Broadband Mobile Radio Platforms Single Supply: +5V to +7V Ultra Small Package: SOT26 Functional Diagram General Description The HMC315 is an ultra broadband GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single positive supply. The surface mount SOT26 amplifier can be used as a broadband gain stage, or used with external matching for optimized narrow band applications. The Darlington configuration results in reduced sensitivity to normal process variations and provides a good 50-ohm input/output port match. The amplifier provides 15 dB of gain and +17 dBm of saturated power while operating from a single positive +7V supply. Electrical Specifications, TA = +25° C, As a Function of Vcc Vcc = +5V Vcc = +7V Parameter Units Min. Frequency Range Gain Max. Min. DC - 7 11 Gain Variation over Temperature 8 - 80 Typ. Typ. Max. DC - 7 14 17 0.015 0.025 11 GHz 15 18 dB 0.015 0.025 dB/°C Input Return Loss 7 10 7 10 dB Output Return Loss 3 7 3 7 dB Reverse Isolation 18 21 18 21 dB Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 8 11 13 16 dBm Saturated Output Power (Psat) @ 1.0 GHz 10 13 15 17.5 dBm Output Third Order Intercept (OIP3) @ 1.0 GHz 23 26 30 33 dBm Noise Figure 6.5 6.5 dB Supply Current (Icc) 30 50 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC315 v01.0701 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Gain & Return Loss @ Vcc= +7V 20 20 15 15 5 0 -5 -10 0 -5 -10 -15 -15 -20 -20 -25 S11 S21 S22 5 -25 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) Gain vs. Temperature @ Vcc= +7V 4 5 6 7 8 Gain vs. Temperature @ Vcc= +5V 20 20 18 18 16 16 14 14 GAIN (dB) GAIN (dB) 3 FREQUENCY (GHz) 12 10 8 6 12 10 8 6 +25C +60C -40C 4 +25C +60C -40C 4 2 AMPLIFIERS - SMT 10 S11 S21 S22 RESPONSE (dB) RESPONSE (dB) 10 2 0 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 3 4 5 6 7 8 FREQUENCY (GHz) Input & Output Return Loss vs. Vcc Bias Reverse Isolation vs. Vcc Bias 0 0 S12 Vcc=7V -5 ISOLATION (dB) -5 RETURN LOSS (dB) 8 Gain & Return Loss @ Vcc= +5V -10 -15 S11 Vcc=7V S22 Vcc=7V S11 Vcc=5V S22 Vcc=5V -20 S12 Vcc=5V -10 -15 -20 -25 -25 -30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 81 HMC315 v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz P1dB vs. Temperature @ Vcc= +5V 20 20 18 18 16 16 14 14 P1dB (dBm) P1dB (dBm) P1dB vs. Temperature @ Vcc= +7V 12 10 8 6 +25C +60C -40C 12 10 8 6 +25C +60C -40C 4 4 2 2 0 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 18 16 16 14 14 Psat (dBm) 20 18 12 10 8 7 8 +25C +60C -40C 12 10 8 2 0 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 3 4 5 6 7 8 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vcc= +7V Output IP3 vs. Temperature @ Vcc= +5V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 30 28 +25C +60C -40C +25C +60C -40C 26 24 IP3 (dBm) IP3 (dBm) 6 4 2 22 20 18 16 14 12 10 0 1 2 3 4 5 FREQUENCY (GHz) 8 - 82 5 6 +25C +60C -40C 4 4 Psat vs. Temperature @ Vcc= +5V 20 6 3 FREQUENCY (GHz) Psat vs. Temperature @ Vcc= +7V Psat (dBm) AMPLIFIERS - SMT 8 6 7 8 0 1 2 3 4 5 6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7 8 HMC315 v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 8 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 INPUT POWER (dBm) -6 -4 -2 0 2 4 6 Power Compression @ 3.0 GHz, Vcc= +5V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) Pout (dBm) Gain (dB) PAE (%) INPUT POWER (dBm) Power Compression @ 3.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 8 Pout Gain (dB) PAE (%) -6 -4 -2 INPUT POWER (dBm) 0 2 4 6 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 AMPLIFIERS - SMT 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Power Compression @ 1.0 GHz, Vcc= +5V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 1.0 GHz, Vcc= +7V Pout (dBm) Gain (dB) PAE (%) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 83 HMC315 v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Application Circuit AMPLIFIERS - SMT 8 Absolute Maximum Ratings Collector Bias Voltage (Vcc) +7.5 Vdc RF Input Power (RFin)(Vcc = +7.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 60 °C) (derate 4.14 mW/°C above 60 °C) 0.373 W Thermal Resistance (junction to lead) 242 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +60 °C Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8 - 84 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0701 MICROWAVE CORPORATION HMC315 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1, J2 PC Mount SMA Connector U1 HMC315 Amplifier PCB* Evaluation PCB 1.5” x 1.5” The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 85