HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary 0.1 Renewal Product Group Dec. 08. 2003 Preliminary 0.2 Append 1.8V Operation Product to Data sheet Dec. 08. 2003 Preliminary 0.3 Insert Spare Enable function for GND Pin(#6) - In case of Reading or Programming, GND Pin(#6) should be Low or High. - Change the test condition of Stand-by current-Refer to Table 13. Change CSP Package name & thickness - Name : VFBGA -> FBGA - Thickness : 1.0mm(max) -> 1.2mm(max) Mar. 08. 2004 Preliminary 0.4 1) Delete Cache Program Mode 2) Modify the description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) Jun. 01. 2004 Preliminary 0.5 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care Sep. 24. 2004 Preliminary Oct. 18. 2004 Preliminary 1) Change TSOP1,WSOP1,FBGA package dimension 0.6 0.7 - Change TSOP1,WSOP1,FBGA mechanical data - Inches parameter has been excluded from the mechanical data table 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure Oct. 20. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.7 / Oct. 2004 1 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE STATUS REGISTER - x8 or x16 bus width. - Multiplexed Address/ Data ELECTRONIC SIGNATURE - Pinout compatibility for all densities SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561M CHIP ENABLE DON'T CARE OPTION - Simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP OPTION Memory Cell Array - 256Mbit = 528 Bytes x 32 Pages x 2,048 Blocks - Boot from NAND support - Automatic Memory Download SERIAL NUMBER OPTION PAGE SIZE - x8 device : (512 + 16 spare) Bytes : HY27US08561M HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions - x16 device: (256 + 8 spare) Words : HY27US16561M DATA INTEGRITY - 100,000 Program/Erase cycles - 10 years Data Retention BLOCK SIZE - x8 device: (16K + 512 spare) Bytes - x16 device: (8K + 256 spare) Words PAGE READ / PROGRAM - Random access: 10us (max) - Sequential access: 50ns (min) - Page program time: 200us (typ) COPY BACK PROGRAM MODE - Fast page copy without external buffering PACKAGE - HY27US(08/16)561M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27US(08/16)561M-T (Lead) - HY27US(08/16)561M-TP (Lead Free) - HY27US08561M-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm) - HY27US08561M-V (Lead) - HY27US08561M-VP (Lead Free) - HY27(U/S)S(08/16)561M-F(P) : 63-Ball FBGA (9.0 x 11 x 1.0 mm) - HY27US(08/16)561M-F (Lead) - HY27US(08/16)561M-FP (Lead Free) - HY27SS(08/16)561M-F (Lead) - HY27SS(08/16)561M-FP (Lead Free) This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.7 / Oct. 2004 2 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash DESCRIPTION The HYNIX HY27(U/S)SXX561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations. The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed. The devices are available in the following packages: - 48-TSOP1 (12 x 20 x 1.2 mm) - 48-WSOP1 (12 x 17 x 0.7 mm) - 63-FBGA (9.0 x 11 x 1.0 mm, 6 x 8 ball array, 0.8mm pitch) Three options are available for the NAND Flash family: - Automatic Page 0 Read after Power-up, which allows the microcontroller to directly download the boot code from page 0. - Chip Enable Dont Care, which allows code to be directly downloaded by a microcontroller, as Chip Enable transitions during the latency time do not stop the read operation. - A Serial Number, which allows each device to be uniquely identified. The Serial Number options is subject to an NDA (Non Disclosure Agreement) and so not described in the datasheet. For more details of this option contact your nearest HYNIX Sales office. Devices are shipped from the factory with Block 0 always valid and the memory content bits, in valid blocks, erased to '1'. Rev 0.7 / Oct. 2004 3 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash I/O8-15 Data Input/Outputs for x16 Device I/O0-7 Data Input/Output, Address Inputs, or Command Inputs for x8 and x16 device ALE Address Latch Enable CLE Command Latch Enable CE Chip Enable RE Read Enable RB Read/Busy (open-drain output) ALE WE Write Enable CLE WP Write Protect VCC Supply Voltage VSS Ground GND GND Input for Spare Area Enable NC Not Connected Internally Vcc I/O8-I/O15, x16 GND CE I/O0-I/O7, x8/x16 RE NAND Flash WE RB WP Vss Figure 1: Logic Diagram Table 1: Signal Name ALE CLE WE CE Command Interface Logic WP P/E/R Controller, High Voltage Generator X Decoder Address Register/Counter RE NAND Flash Memory Array Page Buffer Cache Register Command Register Y Decoder I/O Buffers & Latches RB I/O0-I/O7, x8/x16 I/O8-I/O15, x16 Figure 2. LOGIC BLOCK DIAGRAM Rev 0.7 / Oct. 2004 4 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash NC NC NC NC NC GND RB RE CE NC NC Vcc Vss NC NC CLE ALE WE WP NC NC NC NC NC 1 12 13 24 48 NAND Flash (x8) NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC Vcc Vss NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC 37 36 25 NC NC NC NC NC GND RB RE CE NC NC Vcc Vss NC NC CLE ALE WE WP NC NC NC NC NC 1 12 13 48 NAND Flash (x16) 24 37 36 25 Vss I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 NC NC Vcc NC NC NC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 Vss Figure 3. 48-TSOP1 Contactions, x8 and x16 Device NC NC NC NC NC GND RB RE CE NC NC Vcc Vss NC NC CLE ALE WE WP NC NC NC NC NC 1 12 13 24 48 NAND Flash WSOP1 (x8) 37 36 25 NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC Vcc Vss NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC Figure 4. 48-WSOP1 Contactions, x8 Device Rev 0.7 / Oct. 2004 5 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 1 2 A NC B NC 3 4 5 6 7 8 9 NC C WP ALE VSS CE WE RB D NC RE CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC NC NC NC H NC I/O0 NC NC NC VCC J NC I/O1 NC VCC I/O5 I/O7 K VSS I/O2 I/O3 I/O4 I/O6 VSS 10 NC NC NC NC L NC NC NC NC M NC NC NC NC Figure 5. 63-FBGA Contactions, x8 Device (Top view through package) 1 A NC B NC 2 3 4 5 6 7 8 NC C WP ALE VSS CE WE RB D NC RE CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC I/O5 I/O7 NC H I/O8 I/O1 I/O10 I/O12 I/O14 VCC J I/O0 I/O9 I/O3 VCC I/O6 I/O15 K VSS I/O2 I/O11 I/O4 I/O13 VSS 9 10 NC NC NC NC L NC NC NC NC M NC NC NC NC Figure 6. 63-FBGA Contactions, x16 Device (Top view through package) Rev 0.7 / Oct. 2004 6 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash MEMORY ARRAY ORGANIZATION The memory array is made up of NAND structures where 16 cells are connected in series. The memory array is organized in blocks where each block contains 32 pages. The array is split into two areas, the main area and the spare area. The main area of the array is used to store data whereas the spare area is typically used to store Error correction Codes, software flags or Bad Block identification. In x8 devices the pages are split into a main area with two half pages of 256 Bytes each and a spare area of 16 Bytes. In the x16 devices the pages are split into a 256 Word main area and an 8 Word spare area. Refer to Figure 8, Memory Array Organization. Bad Blocks The NAND Flash 528 Byte/ 264 Word Page devices may contain Bad Blocks, that is blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional Bad Blocks may develop during the lifetime of the device. The Bad Block Information is written prior to shipping (refer to Bad Block Management section for more details). The values shown include both the Bad Blocks that are present when the device is shipped and the Bad Blocks that could develop later on. These blocks need to be managed using Bad Blocks Management, Block Replacement or Error Correction Codes. x8 DEVICES x16 DEVICES Block= 32 Pages Page= 528 Bytes (512+16) 1st half Page (256 bytes) Block= 32 Pages Page= 264 Bytes (256+8) 2nd half Page (256 bytes) e ar Sp Main Area Block Page ea Ar Block Page 8 bits 512 Bytes 256 Words 16 Bytes Page Buffer, 528 Bytes 512 Bytes 16 bits 8 Words Page Buffer, 264 Words 16 Bytes 8 bits 256 Words 8 Words 16 bits Figure 7. Memory Array Organization Rev 0.7 / Oct. 2004 7 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash SIGNAL DESCRIPTIONS See Figure 1, Logic Diagram and Table 1, Signal Names, for a brief overview of the signals connected to this device. Inputs/Outputs (I/O0-I/O7) Input/Outputs 0 to 7 are used to input the selected address, output the data during a Read opertion or input a command or data during a Write operation. The inputs are latched on the rising edge of Write Enable. I/O0-I/O7 can be left floating when the device is deselected or the outputs are disabled. Inputs/Outputs (I/O8-I/O15) Input/Outputs 8 to 15 are only available in x16 devices. They are used to output the data during a Read operation or input data during a Write operation. Command and Address Inputs only require I/O0 to I/O7. The inputs are latched on the rising edge of Write Enable. I/O8-I/O15 can be left floating when the device is deselected or the outputs are disabled. Address Latch Enable (ALE) The Address Latch Enable activates the latching of the Address inputs in the Command Interface. When ALE is high, the inputs are latched on the rising edge of Write Enable. Command Latch Enable (CLE) The Command Latch Enable activates the latching of the Command inputs in the Command Interface. When CLE is high, the inputs are latched on the rising edge of Write Enable. Chip Enable (CE) The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is low, VIL, the device is selected. If Chip Enable goes high, VIH, while the device is busy, the device remains selected and does not go into standby mode. When the device is executing a Sequential Row Read operation, Chip Enable must be held low (from the second page read onwards) during the time that the device is busy (tBLBH1). If Chip Enable goes high during tBLBH1 the operation is aborted. Read Enable (RE) The Read Enable, RE, controls the sequential data output during Read operations. Data is valid tRLQV after the falling edge of RE. The falling edge of RE also increments the internal column address counter by one. Write Enable (WE) The Write Enable input, WE, controls writing to the Command Interface, Input Address and Data latches. Both addresses and data are latched on the rising edge of Write Enable. During power-up and power-down a recovery time of 1us (min) is required before the Command Interface is ready to accept a command. It is recommended to keep Write Enable high during the recovery time. Write Protect (WP) The Write Protect pin is an input that gives a hardware protection against unwanted program or erase operations. When Write Protect is Low, VIL, the device does not accept any program or erase operations. It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down. Rev 0.7 / Oct. 2004 8 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Ready/Busy (RB) The Ready/Busy output, RB, is an open-drain output that can be used to identify if the Program/ Erase/ Read (PER) Controller is currently active. When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the operation completes Ready/Busy goes High, VOH. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pullup resistor. A Low will then indicate that one, or more, of the memories is busy. Refer to the Ready/Busy Signal Electrical Characteristics section for details on how to calculate the value of the pull-up resistor. VCC Supply Voltage VCC provides the power supply to the internal core of the memory device. It is the main power supply for all operations (read, program and erase). An internal voltage detector disables all functions whenever VCC is below 2.0V (for 3.3V devices) or 1.5V (for 1.8V devices) to protect the device from any involuntary program/erase during power-transitions. Each device in a system should have VCC decoupled with a 0.1uF capacitor. The PCB track widths should be sufficient to carry the required program and erase currents. VSS Ground Ground, VSS, is the reference for the power supply. It must be connected to the system ground. GND GND input for spare Area Enable. If GND input pin connect to Vss or static low state, the sequential read including spare area is possible. But if GND input pin connect to Vcc or static high state, the sequential read excluding spare area is possible. BUS OPERATIONS There are six standard bus operations that control the memory. Each of these is described in this section, see Tables 2, Bus Operations, for a summary. Command Input Command Input bus operations are used to give commands to the memory. Command are accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input commands. See Figure 21 and Table 14 for details of the timings requirements. Address Input Address Input bus operations are used to input the memory address. Three bus cycles are required to input the addresses for the 256Mb devices (refer to Tables 3 and 4, Address Insertion). The addresses are accepted when Chip Enable is Low, Address Latch Enable is High, Command Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses. See Figure 22 and Table 14 for details of the timings requirements. Rev 0.7 / Oct. 2004 9 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Data Input Data Input bus operations are used to input the data to be programmed. Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the Write Enable signal. The data is input sequentially using the Write Enable signal. See Figure 23 and Tables 14 and 15 for details of the timings requirements. Data Output Data Output bus operations are used to read: the data in the memory array, the Status Register, the Electronic Signature and the Serial Number. Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low, and Command Latch Enable is Low. The data is output sequentially using the Read Enable signal. See Figure 24 and Table 15 for details of the timings requirements. Write Protect Write Protect bus operations are used to protect the memory against program or erase operations. When the Write Protect signal is Low the device will not accept program or erase operations and so the contents of the memory array cannot be altered. The Write Protect signal is not latched by Write Enable to ensure protection even during power-up. Standby When Chip Enable is High the memory enters Standby mode, the device is deselected, outputs are disabled and power consumption is reduced. Rev 0.7 / Oct. 2004 10 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Table 2. Bus Operation BUS Operation CE ALE CLE RE WE WP I/O0 - I/O7 I/O8 - I/O15(1) Command Input VIL VIL VIH VIH Rising X(2) Command X Address Input VIL VIH VIL VIH Rising X Address X Data Input VIL VIL VIL VIH Rising X Data Input Data Input Data Output VIL VIL VIL Falling VIH X Data Output Data Output Write Protect X X X X X VIL X X VIH X X X X X X X Standby Note : (1) Only for x16 devices. (2) WP must be VIH when issing a program or erase command. Table 3: Address Insertion, x8 Devices Bus Cycle I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 1st Cycle A7 A6 A5 A4 A3 A2 A1 A0 2nd Cycle A16 A15 A14 A13 A12 A11 A10 A9 3rd Cycle A24 A23 A22 A21 A20 A19 A18 A17 Note: (1). A8 is set Low or High by the 00h or 01h Command, see Pointer Operations section. (2). Any additional input cycles will be ignored with tALS > 0ns. Table4: Address Insertion, x16 Devices Bus Cycle I/O8-IO15 1st Cycle L(1) A7 A6 A5 A4 A3 2nd Cycle L(1) A16 A15 A14 A13 A12 3rd Cycle (1) A24 A23 A22 A21 A20 A19 L I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 A2 A1 A0 A11 A10 A9 A18 A17 Note: (1). L must be set ''LOW''. (2). A8 is Don't Care in x16 devices. (3). Any additional input cycles will be ignored with tALS > 0ns. (4). A1 is the Least Significant Address for x16 devices. (5). The 01h Command is not used in x16 devices. Rev 0.7 / Oct. 2004 11 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash COMMAND SET All bus write operations to the device are interpreted by the Command Interface. The Commands are input on I/O0-I/ O7 and are latched on the rising edge of Write Enable when the Command Latch Enable signal is high. Device operations are selected by writing specific commands to the Command Register. The two-step command sequences for program and erase operations are imposed to maximize data security. The Commands are summarized in Table 5, Commands. Table 5: Command Set FUNCTION 1st CYCLE 2nd CYCLE 3rd CYCLE READ A 00h - - READ B 01h(1) - - READ C 50h(2) - - 90h - - READ ELECTRINIC SIGNATURE READ STATUS REGISTER 70h - - PAGE PROGRAM 80h 10h - COPY BACK PROGRAM 00h 8Ah 10h BLOCK ERASE 60h D0h - RESET FFh - - Command accepted during busy Yes Yes Note: (1). Any undefined command sequence will be ignored by the device. (2). The 50h command is valid only when GND(Pin#6) is Low. (3). Bus Write Operation(1st, 2nd and 3rd Cycle) : The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown. DEVICE OPERATIONS Pointer Operations As the NAND Flash memories contain two different areas for x16 devices and three different areas for x8 devices (see Figure 8) the read command codes (00h, 01h, 50h) are used to act as pointers to the different areas of the memory array (they select the most significant column address). The Read A and Read B commands act as pointers to the main memory area. Their use depends on the bus width of the device. - In x16 devices the Read A command (00h) sets the pointer to Area A (the whole of the main area) that is Words 0 to 255. - In x8 devices the Read A command (00h) sets the pointer to Area A (the first half of the main area) that is Bytes 0 to 255, and the Read B command (01h) sets the pointer to Area B (the second half of the main area) that is Bytes 256 to 511. In both the x8 and x16 devices the Read C command (50h), acts as a pointer to Area C (the spare memory area) that is Bytes 512 to 527 or Words 256 to 263. Once the Read A and Read C commands have been issued the pointer remains in the respective areas until another Rev 0.7 / Oct. 2004 12 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been executed in Area B the pointer returns automatically to Area A. The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h) can be issued before the program command 80h is issued (see Figure 9). x8 Devices x16 Devices Area A (00h) Area B (01h) Area C (50h) Area A (00h) Area C (50h) Bytes 0-255 Bytes 256-511 Bytes 512-527 Words 0-255 Words 256-263 A B C A C Page Buffer Page Buffer Pointer (00h, 50h) Pointer (00h, 01h, 50h) Figure 8. Pointer Operation AREA A I/O 00h 80h Address Inputs Data Input 10h 00h 80h Address Inputs Data Input 10h Data Input 10h Data Input 10h AREA A, B, C can be programmed depending on how much data is input. Subsequent 00h commands can be omitted. AREA B I/O 01h 80h Address Inputs Data Input 10h 01h 80h Address Inputs AREA B, C can be programmed depending on how much data is input. The 01h command must be re-issued before each program. AREA C I/O 50h 80h Address Inputs Data Input 10h 50h 80h Address Inputs Only Areas C can be programmed. Subsequent 50h commands can be omitted. Figure 9. Pointer Operations for Programming Rev 0.7 / Oct. 2004 13 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Read Memory Array Each operation to read the memory area starts with a pointer operation as shown in the Pointer Operations section. Once the area (main or spare) has been selected using the Read A, Read B or Read C commands, three bus cycles are required to input the address(refer to Table 3 and 4) of the data to be read. The device defaults to Read A mode after powerup or a Reset operation. Devices, where page0 is read automatically at power-up, are available on request. When reading the spare area addresses: - A0 to A3 (x8 devices) - A0 to A2 (x16 devices) are used to set the start address of the spare area while addresses: - A4 to A7 (x8 devices) - A3 to A7 (x16 devices) are ignored. Once the Read A or Read C commands have been issued they do not need to be reissued for subsequent read operations as the pointer remains in the respective area. However, the Read B command is effective for only one operation, once an operation has been executed in Area B the pointer returns automatically to Area A and so another Read B command is required to start another read operation in Area B. Once a read command is issued three types of operations are available: Random Read, Page Read and Sequential Row Read. Random Read Each time the command is issued the first read is Random Read. Page Read After the Random Read access the page data is transferred to the Page Buffer in a time of tWHBH (refer to Table 15 for value). Once the transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially (from selected column address to last column address) by pulsing the Read Enable signal. Sequential Row Read After the data in last column of the page is output, if the Read Enable signal is pulsed and Chip Enable remains Low then the next page is automatically loaded into the Page Buffer and the read operation continues. A Sequential Row Read operation can only be used to read within a block. If the block changes a new read command must be issued. Refer to Figures 12 and 13 for details of Sequential Row Read operations. To terminate a Sequential Row Read operation set the Chip Enable signal to High for more than tEHEL. Sequential Row Read is not available when the Sequential row read option is disabled. Rev 0.7 / Oct. 2004 14 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash CLE CE WE ALE RE tBLBH1 (read) RB I/O 00h/ 01h/ 50h Address Input Data Output (sequentially) Busy Command Code Figure 10. Read (A, B, C) Operation Note: 1. If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns. Read A Command, x8 Devices Area A (1st half Page) Area B (2nd half Page) Read A Command, x16 Devices Area C (Spare) A9-A24(1) Area A (main area) Area C (50h) A9-A24(1) A0-A7 A0-A7 Read C Command, x8/x16 Devices Read B Command, x8 Devices Area A (1st half Page) Area B (2nd half Page) Area A Area C (Spare) Area A/B Area C (Spare) A9-A24(1) A9-A24(1) A0-A3 (x8) A0-A2 (x16) A0-A7 A4-A7 (x8), A3-A7 (x16) are don't care Figure 11. Read Block Diagrams Note: 1. Highest address depends on device density. Rev 0.7 / Oct. 2004 15 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash tBLBH1 (Read Busy time) RB tBLBH1 Busy Busy I/O 00h/ 01h/50h Address Inputs tBLBH1 1st Page Output Busy 2nd Page Output Nth Page Output Command Code Figure 12. Sequential Row Read Operation Read A Command, x8 Devices Area A (1st half Page) Area B (2nd half Page) Read A Command, x16 Devices Area C (Spare) Area A (main area) 1st Page 2nd Page Nth Page Block Note : GND input=L, 00h Command Read C Command, x8/x16 Devices Read B Command, x8 Devices Area B (2nd half Page) Area C (Spare) Area A 1st Page 2nd Page Nth Page Block Note : GND input=L, 01h Command 1st Page 2nd Page Nth Page Block Note : GND input=L, 00h Command Area A (1st half Page) Area C (50h) Area A/B Area C (Spare) 1st Page 2nd Page Nth Page Block Note : GND input=L, 50h Command Figure 13. Sequential Row Read Block Diagrams Rev 0.7 / Oct. 2004 16 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Page Program The Page Program operation is the standard operation to program data to the memory array. The main area of the memory array is programmed by page, however partial page programming is allowed where any number of bytes (1 to 528) or words (1 to 264) can be programmed. The max number of consecutive partial page program operations allowed in the same page is one in the main area and two in the spare area. After exceeding this a Block Erase command must be issued before any further program operations can take place in that page. Before starting a Page Program operation a Pointer operation can be performed to point to the area to be programmed. Refer to the Pointer Operations section and Figure 9 for details. Each Page Program operation consists of five steps (see Figure 14): 1. one bus cycle is required to setup the Page Program command. 2. three bus cycles are then required to input the program address (refer to Table 3 and Table 4). 3. the data is then input (up to 528 Bytes/ 264 Words) and loaded into the Page Buffer. 4. one bus cycle is required to issue the confirm command to start the Program/ Erase/Read Controller. 5. The Program/ Erase/Read Controller then programs the data into the array. Once the program operation has started the Status Register can be read using the Read Status Register command. During program operations the Status Register will only flag errors for bits set to '1' that have not been successfully programmed to '0'. During the program operation, only the Read Status Register and Reset commands will be accepted, all other commands will be ignored. Once the program operation has completed the Program/ Erase/Read Controller bit SR6 is set to '1' and the Ready/ Busy signal goes High. The device remains in Read Status Register mode until another valid command is written to the Command Interface. tBLBH2 (Program Busy time) RB Busy I/O 80h Page Program Setup Code Address Inputs Data Input 10h Confirm Code 70h SR0 Read Status Register Figure 14. Page Program Operation Note: Before starting a Page Program operation a Pointer operation can be performed. Refer to Pointer section for details. Rev 0.7 / Oct. 2004 17 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Copy Back Program The Copy Back Program operation is used to copy the data stored in one page and reprogram it in another page. The Copy Back Program operation does not require external memory and so the operation is faster and more efficient because the reading and loading cycles are not required. The operation is particularly useful when a portion of a block is updated and the rest of the block needs to be copied to the newly assigned block. If the Copy Back Program operation fails an error is signalled in the Status Register. However as the standard external ECC cannot be used with the Copy Back operation bit error due to charge loss cannot be detected. For this reason it is recommended to limit the number of Copy Back operations on the same data and or to improve the performance of the ECC. The Copy Back Program operation requires three steps: - 1. The source page must be read using the Read A command (one bus write cycle to setup the command and then 3 bus cycles to input the source page address). This operation copies all 264 Words/ 528 Bytes from the page into the Page Buffer. - 2. When the device returns to the ready state (Ready/Busy High), the second bus write cycle of the command is given with the 3 bus cycles to input the target page address. A24 must be the same for the Source and Target Pages. - 3. Then the confirm command is issued to start the P/E/R Controller. After a Copy Back Program operation, a partial page program is not allowed in the target page until the block has been erased. See Figure 15 for an example of the Copy Back operation. tBLBH1 (Read Busy time) RB tBLBH2 (Program Busy time) Busy I/O 00h Read Code Source Address Inputs 8Ah Target Address Inputs Copy Back Code 10h 70h SR0 Read Status Register Figure 15. Copy Back Operation Block Erase Erase operations are done one block at a time. An erase operation sets all of the bits in the addressed block to '1'. All previous data in the block is lost. An erase operation consists of three steps (refer to Figure 17): 1. One bus cycle is required to setup the Block Erase command. 2. Only two bus cycles for 256Mb devices are required to input the block address. The first cycle (A0 to A7) is not required as only addresses A14 to A24 (highest address depends on device density) are valid, A9 to A13 are ignored. 3. One bus cycle is required to issue the confirm command to start the P/E/R Controller. Once the erase operation has completed the Status Register can be checked for errors. Rev 0.7 / Oct. 2004 18 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash tBLBH3 (Erase Busy time) RB Busy I/O 60h Block Erase Setup Code Block Address Inputs D0h Confirm Code 70h SR0 Read Status Register Figure 17. Block Erase Operation Reset The Reset command is used to reset the Command Interface and Status Register. If the Reset command is issued during any operation, the operation will be aborted. If it was a program or erase operation that was aborted, the contents of the memory locations being modified will no longer be valid as the data will be partially programmed or erased. If the device has already been reset then the new Reset command will not be accepted. The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value of tBLBH4 depends on the operation that the device was performing when the command was issued, refer to Table 15 for the values. Read Status Register The device contains a Status Register which provides information on the current or previous Program or Erase operation. The various bits in the Status Register convey information and errors on the operation. The Status Register is read by issuing the Read Status Register command. The Status Register information is present on the output data bus (I/O0- I/O7) on the falling edge of Chip Enable or Read Enable, whichever occurs last. When several memories are connected in a system, the use of Chip Enable and Read Enable signals allows the system to poll each device separately, even when the Ready/Busy pins are common-wired. It is not necessary to toggle the Chip Enable or Read Enable signals to update the contents of the Status Register. After the Read Status Register command has been issued, the device remains in Read Status Register mode until another command is issued. Therefore if a Read Status Register command is issued during a Random Read cycle a new read command must be issued to continue with a Page Read or Sequential Row Read operation. The Status Register bits are summarized in Table 6, Status Register Bits. Refer to Table 6 in conjunction with the following text descriptions. Write Protection Bit (SR7) The Write Protection bit can be used to identify if the device is protected or not. If the Write Protection bit is set to '1' the device is not protected and program or erase operations are allowed. If the Write Protection bit is set to '0' the device is protected and program or erase operations are not allowed. Rev 0.7 / Oct. 2004 19 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash P/E/R Controller Bit (SR5) The Program/Erase/Read Controller bit indicates whether the P/E/R Controller is active or inactive. When the P/E/R Controller bit is set to '0', the P/E/R Controller is active (device is busy); when the bit is set to '1', the P/E/R Controller is inactive (device is ready). Error Bit (SR0) The Error bit is used to identify if any errors have been detected by the P/E/R Controller. The Error Bit is set to '1' when a program or erase operation has failed to write the correct data to the memory. If the Error Bit is set to '0' the operation has completed successfully. SR4, SR3 and SR2 are Reserved Rev 0.7 / Oct. 2004 20 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Table 6: Status Register Bit Bit NAME Logic Level SR7 Write Protection SR6 Program/Erase/Read Controller SR5 Program/ Erase/ Read Controller SR4, SR3, SR2 Reserved SR0 Generic Error Definition '1' Not Protected '0' Protected '1' P/E/R C Inactive, device ready '0' P/E/R C active, device busy '1' P/E/R C inactive, device ready '0' P/E/R C active, device busy Don't Care '1' Error - Operation failed '0' No Error - Operation successful Read Electronic Signature The device contains a Manufacturer Code and Device Code. To read these codes two steps are required: 1. first use one Bus Write cycle to issue the Read Electronic Signature command (90h) 2. then subsequent Bus Read operations will read the Manufacturer Code and the Device Code until another command is issued. Refer to Table, Read Electronic Signature for information on the addresses. Part Number Manufacture Code Device Code Bus Width HY27US08561M ADh 75h x8 HY27SS08561M ADh 35h x8 HY27US16561M 00ADh 0055h x16 HY27SS16561M 00ADh 0045h x16 Automatic Page 0 Read at Power-Up Automatic Page 0 Read at Power-Up is an option available on all devices belonging to the NAND Flash 528 Byte/264 Word Page family. It allows the microcontroller to directly download boot code from page 0, without requiring any command or address input sequence. The Automatic Page 0 Read option is particularly suited for applications that boot from the NAND. Devices delivered with Automatic Page 0 Read at Power-Up can have the Sequential Row Read option either enabled or disabled. Rev 0.7 / Oct. 2004 21 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Automatic Page 0 Read Description. At powerup, once the supply voltage has reached the threshold level, VCCth, all digital outputs revert to their reset state and the internal NAND device functions (reading, writing, erasing) are enabled. The device then automatically switches to read mode where, as in any read operation, the device is busy for a time tBLBH1 during which data is transferred to the Page Buffer. Once the data transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially on the I/O bus by pulsing the Read Enable, R, signal. Figures 18 and 19 show the power-up waveforms for devices featuring the Automatic Page 0 Read option. Sequential Row Read Disabled If the device is delivered with sequential row read disabled and Automatic Read page0 at Power-up, only the first page (page0) will be automatically read after the power-on sequence. Refer to Figure 18. Sequential Row Read Enabled If the device is delivered with the Automatic Page 0 Read option only (Sequential Row Read Enabled), the device will automatically enter Sequential Row Read mode after the power-up sequence, and start reading Page 0, Page 1, etc., until the last memory location is reached, each new page being accessed after a time tBLBH1. The Sequential Row Read operation can be inhibited or interrupted by de-asserting CE (set to VIH) or by issuing a command. Refer to Figure 19. Vccth (1) Vcc WE CE ALE CLE tBLBH1 RB RE I/O Busy Data N Data N+1 Data N+2 Last Data Data Output from Address N to Last Byte or Word in Page Note: (1). VCCth is equal to 2.0V for 3.3V and to 1.5V for 1.8V Power Supply devices. Figure 18. Sequential Row Read Disabled and Automatic Page 0 Read at power-up Rev 0.7 / Oct. 2004 22 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Vccth(1) Vcc WE CE ALE CLE tBLBH1 tBLBH1 (Read Busy time) RB tBLBH1 Busy Busy Page 0 Data Out I/O tBLBH1 Busy Page 1 Data Out Busy Page 2 Data Out Page Nth Data Out Note: (1). VCCth is equal to 2.0V for 3.3V and to 1.5V for 1.8V Power Supply devices. Figure 19. Automatic Page 0 Read at power-up (Sequential Row Read Enable) Bad Block Management Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and common source line by a select transistor.The devices are supplied with all the locations inside valid blocks erased (FFh). The Bad Block Information is written prior to shipping. Any block where the 6th Byte/ 1st Word in the spare area of the 1st or 2nd page (if the 1st page is Bad) does not contain FFh is a Bad Block.The Bad Block Information must be read before any erase is attempted as the Bad Block Information may be erased. For the system to be able to recognize the Bad Blocks based on the original information it is recommended to create a Bad Block table following the flowchart shown in Figure 20. Block Replacement Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying the data to a valid block.These additional Bad Blocks can be identified as attempts to program or erase them will give errors in the Status Register. As the failure of a page program operation does not affect the data in other pages in the same block, the block can be replaced by re-programming the current data and copying the rest of the replaced block to an available valid block. The Copy Back Program command can be used to copy the data to a valid block. See the “Copy Back Program” section for more details. Refer to Table 7 for the recommended procedure to follow if an error occurs during an operation. Table 7: Block Failure Operation Rev 0.7 / Oct. 2004 Recommended Procedure Erase Block Replacement Program Block Replacement or ECC Read ECC 23 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash START Block Address= Block 0 Increment Block Address Data =FFh? NO Update Bad Block table YES Last block? NO YES END Figure 20. Bad Block Management Flowchart Table 8: Valid Block Symbol Para. Min Max Unit NVB # of Valid Block 2013 2048 Blocks PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 9. Rev 0.7 / Oct. 2004 24 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Table 9: Program, Erase Time and Program Erase Endurance Cycles NAND Flash Parameters Min Unit Typ Max Page Program Time 200 500 us Block Erase Time 2 3 ms Program/Erase Cycles (per block) 100,000 cycles Data Retention 10 years MAXIMUM RATING Stressing the device above the ratings listed in Table 10, Absolute Maximum Ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Table 10: Absolution Maximum Rating Symbol Parameter TBIAS TSTG NAND Flash Unit Min Max Temperature Under Bias -50 125 o Storage Temperature -65 150 o 1.8V devices -0.6 2.7 V 3.3 V devices -0.6 4.6 V 1.8V devices -0.6 2.7 V 3.3 V devices -0.6 4.6 V VIO(1) Input or Output Voltage VCC Supply Voltage C C Note: (1). Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may overshoot to VCC + 2V for less than 20ns during transitions on I/O pins. DC AND AC PARAMETERS This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Conditions summarized in Table 11, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Rev 0.7 / Oct. 2004 25 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Table 11: Operating and AC Measurement Conditions NAND Flash Parameter Max 1.7 1.95 V 2.6V devices 2.4 2.8 V 3.3V devices 2.7 3.6 1.8V devices Supply Voltage (VCC) Ambient Temperature (TA) (1) Commercial Temp. Indurstrial Temp. 0 -40 1.8V devices Load Capacitance (CL) (1 TTL GATE and CL) 70 85 oC C pF 2.6V devices 30 pF 3.3V devices 100 pF 2.6V devices(1) 3.3V devices 0 VCC V 0 VCC V 0.4 2.4 V 1.8V devices Input and Output Timing Ref. Voltages V o 30 (1) 1.8V devices Input Pulses Voltages Unit Min 2.6V V VCC/2 devices(1) 3.3V devices Input Rise and Fall Times V 1.5 V 5 ns Note : (1). TBD Table 12: Capacitance Parameter Symbol Test Condition Typ Max Unit CIN Input Capacitance VIN = 0V 10 pF CI/O Input/Output Capacitance VIL = 0V 10 pF Note: TA = 25oC, f = 1 MHz. CIN and CI/O are not 100% tested. Rev 0.7 / Oct. 2004 26 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Table 13: DC Characteristics, 3.3V Device and 1.8V Device Symbol Parameter ICC1 ICC2 Operating Current ICC3 ICC4 ICC5 Test Condition 3.3V Device 1.8V Device Min Typ Max Min Typ Max Unit Sequentia Read tRLRL minimum CE=VIL, IOUT = 0 mA - 10 20 - 8 15 mA Program - - 10 20 - 8 15 mA Erase - - 10 20 - 8 15 mA CE=VIH, WP=0V/VCC, GND(Pin #6)=0V/Vcc - - 1 - - 1 mA CE=VCC-0.2, WP=0/VCC GND(Pin #6)=0V/Vcc - 10 50 - 10 50 uA Stand-by Current (TTL) Stand-By Current (CMOS) ILI Input Leakage Current VIN= 0 to VCCmax - - ± 10 - - ± 10 uA ILO Output Leakage Current VOUT= 0 to VCCmax - - ± 10 - - ± 10 uA VIH Input High Voltage - 2.0 - VCC+0.3 VCC-0.4 VCC+0.3 V VIL Input Low Voltage - -0.3 - 0.8 -0.3 0.4 V VOH Output High Voltage Level 2.4 - - VCC-0.1 - - V IOL = 2.1mA (for 3.3V Device) IOL = 100uA (for 1.8V Device) - - 0.4 - - 0.1 V VOL = 0.4V (for 3.3V Device) VOL = 0.1V (for 1.8V Device) 8 10 - 3 4 - mA - - 2.5 - - 1.5 V VOL Output Low Voltage Level IOL(RB) Output Low Current (RB) VLKO VDD Supply Voltage (Erase and Program lockout) Rev 0.7 / Oct. 2004 IOH = -400uA (for 3.3V Device) IOH = -100uA (for 1.8V Device) - 27 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Table 14: AC Characteristics for Command, Address, Data Input (3.3V Device and 1.8V Device) Symbol tALLWL tALHWL Alt. Symbol tALS tCLHWL tCLS tCLLWL Address Latch Low to Write Enable Low Address Latch Hith to Write Enable Low Command Latch High to Write Enable Low Command Latch Low to Write Enable Low tDVWH tDS Data Valid to Write Enable High tELWL tCS Chip Enable Low to Write Enable Low tWHALH tWHALL tALH tWHCLH tCLH tWHCLL 3.3V Device Parameter Write Enable High to Address Latch High Write Enable High to Address Latch Low Write Enable High to Command Latch High Write Enable High to Command Latch Low 1.8V Device Unit ALE Setup time Min 0 ns CL Setup time Min 0 ns Data Setup time Min 20 ns CE Setup time Min 0 ns ALE Hold time Min 10 ns CLE hold time Min 10 ns Data Hold time Min 10 ns 10 ns tWHDX tDH Write Enable High to Data Transition tWHEH tCH Write Enable High to Chip Enable High CE Hold time Min tWHWH tWH Write Enable High to Write Enable Low WE High Hold time Min 15 20 ns tWLWH tWP Write Enable Low to Write Enable High WE Pulse Width Min 25(1) 40(1) ns tWLWL tWC Write Enable Low to Write Enable Low Write Cycle time Min 50 60 ns Note: 1. If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns. Rev 0.7 / Oct. 2004 28 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Table 15: AC Characteristics for Operation (3.3V Device and 1.8V Device) Alt. Symbol Symbol tALLRL1 tAR1 tALLRL2 tAR2 tBHRL tRR tBLBH1 tR tBLBH2 tBLBH3 1.8V Device Unit Read Electronic Signature Min 10 ns Read cycle Min 50 ns Min 20 ns Read Busy time, 128Mb, 256Mb Max 10 us tPROG Program Busy time Max 500 us tBERS Erase Busy time Max 3 ms Reset Busy time, during ready Max 5 us Reset Busy time, during read Max 5 us Reset Busy time, during program Max 10 us Reset Busy time, during erase Max 500 us Address Latch Low to Read Enable Low Ready/Busy High to Read Enable Low Ready/Busy Low to Ready/ Busy High tBLBH4 3.3V Device Parameter tRST tCLLRL tCLR Command Latch Low to Read Enable Low Min 10 ns tDZRL tIR Data Hi-Z to Read Enable Low Min 0 ns tEHBH tCRY Chip Enable High to Ready/Busy High (CE intercepted read) Max 60+tr(1) ns tEHEL tCEH Chip Enable High to Chip Enable Low(2) Min 100 ns tEHQZ tCHZ Chip Enable High to Output Hi-Z Max 20 ns tELQV tCEA Chip Enable Low to Output Valid Max 45 ns tRHBL tRB Max 100 ns tRHRL tREH Min 15 ns tRHQZ tRHZ Min 15 Max 30 tRLRH tRP Min 30 tRLRL tRC Rev 0.7 / Oct. 2004 Read Enable High to Ready/Busy Low Read Enable High to Read Enable Low Read Enable High Hold time Read Enable High to Output Hi-Z Read Enable Low to Read Enable High Read Enable Low to Read Enable Low Read Enable Pulse Width Read Cycle time Min 50 ns ns 60 ns 29 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Alt. Symbol tRLQV Symbol 3.3V Device Parameter 1.8V Device Unit Read Enable Access time tREA Read Enable Low to Output Valid tREADID Max 35 ns Read ES Access time tWHBH tR Write Enable High to Ready/Busy High Max 10 us tWHBL tWB Write Enable High to Ready/Busy Low Max 100 ns tWHRL tWHR Write Enable High to Read Enable Low Min 60 ns tWLWL tWC Write Enable Low to Write Enable Low Min Write Cycle time 50 60 ns Note: (1). The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figures 32, 33 and 34. (2). To break the sequential read cycle, CE must be held High for longer than tEHEL. (3). ES = Electronic Signature. CLE tCLHWL (CLE Setup time) tELWL (CE Setup time) tHWCLL (CLE Hold time) tWHEH (CE Hold time) CE tWLWH WE tALLWL (ALE Setup time) tWHALH (ALE Hold time) ALE tDVWH (Data Setup time) I/O tWHDX (Data Hold time) Command Figure 21. Command Latch AC Waveforms Rev 0.7 / Oct. 2004 30 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash tCLLWL (CLE Setup time) CLE tELWL tWLWL (CE Setup time) tWLWL CE tWLWH WE tWLWH tWHWL tALHWL (ALE Setup time) tWLWH tWHWL tWHALL (AL Hold time) tWHALL tWHALL ALE tDVWH (Data Setup time) tDVWH tWHDX Address cycle 1 I/O tDVWH (Data Hold time) tWHDX Address cycle 2 tWHDX Address cycle 3 Figure 22. Address Latch AC Waveforms tWHCLH (CLE Hold time) CLE tWHEH (CE Hold time) CE tALLWL (ALE Setup time) tWLWL ALE tWLWH tWLWH tWLWH WE tDVWH (Data Setup time) I/O tDVWH tDVWH tWHDX (Data Hold time) Data In 0 tWHDX Data In 1 tWHDX Data In Last Figure 23. Data Input Latch AC Waveforms Rev 0.7 / Oct. 2004 31 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash tRLRL (Read Cycle time) CE tEHQZ tRHRL (RE High Holdtime) RE tRHQZ tRHQZ tRLQV tRLQV tRLQV (RE Accesstime) Data Out I/O Data Out Data Out tBHRL RB Figure 24. Sequential Data Output after Read AC Waveforms Note:1. CLE = Low, ALE = Low, WE = High. tCLLRL CLE tWHCLL tCLHWL tWHEH CE tELWL tWLWH WE tELQV tEHQZ tRLQV tRHQZ tWHRL RE tDZRL tWHDX (Data Hold time) tDVWH (Data Setup time) I/O 70h Status Register Output Figure 25. Read Status Register AC Waveform Rev 0.7 / Oct. 2004 32 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash CLE CE WE ALE tALLRL1 RE tRLQV (Read ES Access time) I/O 90h Man. code 00h Read Electronic Signature Command 1st Cycle Address Device code Don't Care Manufacturer and Device Code Don't Care Reserved For Future Use Figure 26. Read Electronic Signature AC Waveform Note: Refer to table(To see Page 22) for the values of the manufacture and device codes. CLE tEHEL CE tEHQZ tWHWL WE tEHBH tWHBL ALE tRLRL (Read Cycle time) tALLRL2 tWHBH tRHQZ RE tRHBL tRLRH tBLBH1 RB I/O 00h or 01h Command Code Add.N cycle 1 Add.N cycle 2 Address N Input Add.N cycle 3 Data N Busy Data N+1 Data N+2 Data Last Data Output from Address N to Last Byte or Word in Page Figure 27. Read Read A/ Read B Operation AC Waveform Rev 0.7 / Oct. 2004 33 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Note: 1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are don't care. 2. Only address cycle 4 is required. CLE CE WE tWHBH tWHALL ALE tALLRL2 tBHRL RE I/O 50h Add. M cycle 1 Add. M cycle 2 Add. M cycle 3 Data M Data Last RB Command Code Address M Input Busy Data Output from M to Last Byte or Word in Area C Figure 28. Read C Operation, One Page AC Waveform Rev 0.7 / Oct. 2004 34 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash CLE CE tWLWL (Write Cycle time) tWLWL tWLWL WE tWHBL tBLBH2 (Program Busy time) ALE RE I/O 80h Add. N cycle 1 Add. N cycle 2 Add. N cycle 3 N Last 10h 70h SR0 RB Page Program Setup Code Address Input Data Input Confirm Code Page Program Read Status Register Figure 29. Page Program AC Waveform Rev 0.7 / Oct. 2004 35 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash CLE CE tWLWL (Write Cycle time) WE tBLBH3 (Erase Busy time) ALE RE I/O 60h Add. N cycle 1 Add. N cycle 2 D0h 70h SR0 RB Block Erase Setup Command Block Address Input Confirm Code Block Erase Read Status Register Figure 30. Block Erase AC Waveform WE ALE CLE RE I/O FFh tBLBH4 (Reset Busy time) RB Figure 31. Reset AC Waveform Rev 0.7 / Oct. 2004 36 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash System Interface Using CE don’t care To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below. So, it is possible to connect NAND Flash to a microprocessor. The only function that was removed from standard NAND Flash to make CE don't care read operation was disabling of the automatic sequential read function. CLE CE don't-care CE WE ALE I/Ox 80h Start Add.(3Cycle) Data Input Data Input 10h Figure32. Program Operation with CE don't-care. &/( ,IVHTXHQWLDOURZUHDGHQDEOHG &(PXVWEHKHOGORZGXULQJW5 &(GRQ¶WFDUH &( 5( $/( 5% W5 :( ,2[ K 6WDUW$GG&\FOH 'DWD2XWSXWVHTXHQWLDO Figure33. Read Operation with CE don't-care Rev 0.7 / Oct. 2004 37 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Ready/Busy Signal Electrical Characteristics Figures 32, 33 and 34 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor RP can be calculated using the following equation: where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP max is determined by the maximum value of tr. ready Vcc VOH VOL busy tf tr Figure 32. Ready/Busy AC Waveform ibusy Rp Vcc Device RB Open Drain Output Vss Figure 34. Ready/Busy Load Circuit Rev 0.7 / Oct. 2004 38 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 4 300 3 200 2 1.7 100 0.85 30 1.7 0 1 120 1 90 0.57 60 1.7 0.43 1.7 2 ibusy(mA) tr, tf(ns) Vcc=1.8, CL=30pF 400 1.7 3 4 Rp(KΩ) Vcc=3.3, CL=100pF 400 400 3 300 2.4 200 2 200 1.2 100 100 ibusy(mA) tr, tf(ns) 300 4 1 0.8 0.6 3.6 0 3.6 1 3.6 2 3.6 3 4 Rp(KΩ) tf ibusy tr Figure 35. Resistor Value Waveform Timings for Ready/Busy Signal Rev 0.7 / Oct. 2004 39 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Figure 36. 48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Outline Table 16: 48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data Symbol millimeters Min Typ A Max 1.200 A1 0.050 0.150 A2 0.980 1.030 B 0.170 0.250 C 0.100 0.200 CP 0.050 D 11.910 12.000 12.120 E 19.900 20.000 20.100 E1 18.300 18.400 18.500 e - 0.500 L 0.500 0.680 alpha 0 5 Rev 0.7 / Oct. 2004 40 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Figure 37. 48-WSOP1 - 48-lead Plastic Thin Small Outline, 12 x 17mm, Package Outline Table 17: 48-WSOP1- 48-lead Plastic Very Very Thin Small Outline, 12x17mm, Package Mechanical Data Symbol millimeters Min Typ A A1 Max 0.700 0 0.080 A2 0.540 0.620 B 0.130 0.230 C 0.065 0.175 CP 0.050 D 11.910 12.000 12.120 E 16.900 17.000 17.100 E1 15.300 15.400 15.500 e 0.500 L 0.450 0.750 alpha 0 8 Rev 0.7 / Oct. 2004 41 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Figure 38. 63-FBGA - 9.0 x 11, 6x8 ball array 0.8mm pitch, Pakage Outline Note: Drawing is not to scale. Table 18: 63-FBGA - 9.0 x 11, 6x8 ball array 0.8mm pitch, Pakage Outline Mechanical Data Symbol millimeters Min Typ Max A 0.80 0.90 1.00 A1 0.25 0.30 0.35 A2 0.55 0.60 0.65 b 0.40 0.45 0.50 D 8.90 9.00 9.10 D1 4.00 D2 E E1 7.20 10.90 11.00 E2 8.80 e 0.80 FD 2.50 FD1 1.70 FE 2.70 FE1 1.10 SD 0.40 SE 0.40 Rev 0.7 / Oct. 2004 11.10 5.60 42 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash MARKING INFORMATION - TSOP1/WSOP Packag TSOP1 / WSOP Marking Example H Y 2 7 x x x x x S - hynix : Hynix Symbol - KOR : Origin Country - HY27xSxx121mTxB : Part Number x K O R x 5 6 1 M Y W W x x HY: HYNIX 27: NAND Flash x: Power Supply : U(2.7V~3.6V), S(1.7V~2.2V) S: Classification : Single Level Cell+Single Die xx: Bit Organization : 08(x8), 16(x16) 56: Density : 256Mb 1: Mode : 1nCE & 1R/nB; CE don't care M: Version : 1st Generation x: Package Type : T(TSOP1), V(WSOP) x: Package Material : Blank(Normal), P(Lead Free) x: Operating Temperature : C(0℃~70℃), E(-25℃~85℃) I(-40℃~85℃) x: Bad Block : B(Included Bad Block), S(1~5 Bad Block), P(All Good Block) - Y: Year (ex: 4=year 2004, 05= year 2005) - ww: Work Week (ex: 12= work week 12) - xx: Process Code Note - Capital Letter : Fixed Item - Small Letter : Non-fixed Item Rev 0.7 / Oct. 2004 43 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash MARKING INFORMATION - FBGA Packag Marking Example H Y x x x x FBGA - HY27xSxx121mTxB S x x 5 6 1 M Y W W x x K O R : Part Number HY: HYNIX x: Power Supply : U(2.7V~3.6V), S(1.7V~2.2V) S: Classification : Single Level Cell+Single Die xx: Bit Organization : 08(x8), 16(x16) 56: Density : 256Mb 1: Mode : 1nCE & 1R/nB; CE don't care M: Version : 1st Generation x: Package Material : Blank(Normal), P(Lead Free) x: Operating Temperature : C(0℃~70℃), E(-25℃~85℃) x: Bad Block : B(Included Bad Block), S(1~5 Bad Block), I(-40℃~85℃) P(All Good Block) - Y: Year (ex: 4=year 2004, 05= year 2005) - ww: Work Week (ex: 12= work week 12) - xx: Process Code - Kor : Origin Country Note - Capital Letter - Small Letter Rev 0.7 / Oct. 2004 : Fixed Item : Non-fixed Item 44