Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1000 Features World standard miniature package:SOT-89. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 0.7 A Collector Current (pulse) * IC 1.0 A Total power dissipation PT 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pulse Test PW 10ms, Duty Cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 60 V, IE = 0 A Testconditons 100 nA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 A 100 nA DC current gain * hFE VCE = 1.0 V, IC = 100 mA 90 200 50 150 VCE(sat) IC = 500 mA, IB = 50 mA Base saturation voltage * VBE(sat) IC = 500 mA, IB = 50 mA Gain bandwidth product Output capacitance * Pulsed: PW 0.12 400 0.4 V 0.9 1.2 V 635 700 mV VBE VCE = 6.0 V, IC = 10 mA fT VCE = 6.0 V, IE = -10 mA 110 MHz VCB = 6 V, IE = 0, f = 1.0 MHz 13 pF Cob 350 ìs, duty cycle Typ VCE = 1.0 V, IC = 500 mA Collector saturation voltage * Base-emitter voltage * Min 600 2% hFE Classification Marking LM LL LK hFE 90 180 135 270 200 400 www.kexin.com.cn 1