PJC945 NPN Epitaxial Silicon Transistor AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OS C. • • • • • TO-92 SOT-23 Complement to PJA733 Excellent DC Current Gain Linearly 0.1mA to 50mA Low Output Capacitance Cob=2.5PF(Typ.) @VCB =6V,f=1MHz Low Noise Figure NF=2.5dB(TYP.) IC =0.1mA,VCE = 6V Rg= 2KΩ,f=1KHz DC Current Gain Selection Available ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Rating Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 60 50 V V Emitter-Base Voltage VEBO 5 V Collector Current Ic 120 mA Total Device Dissipation PD 450 mW PD 1.2 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 ~150 °C P in : 1. Emitter 2. Colletor 3. Base P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION Device PJC945CT PJC945CX Operating Temperature -20℃～+85℃ Package TO-92 SOT-23 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current-Gain-Bandwidth Product Symbol BVCBO BVCEO BVEBO ICBO IEBO ICEO hFE(1) hFE(2) VCE (SAT) VBE (SAT) VBE (on) fT Output Capacitance C Ob Noise Figure NF h FE (2) Test Condition Ic = 10µA, IE = 0 Ic =1.0mA, IB =0 IE = _10µA, IC = 0 VCB= 45V,IE =0 VEB=3V,IC=0 VCE =40V,IB=0 VCE =6V,Ic =0.1 mA VCE =6V,Ic =1.0 mA IC=10mA,IB=1mA IC=10mA,IB=1mA IC=0.1mA,VCE =6V VCE =6V,IC=10mA VCB=6V,IE =0 f=1MHZ VCE =6V,IE = _0.5mA f=1KHZ ,Rs=2KΩ Min 80 50 5 Typ 0.1 0.1 1 Unit V V V µA µA µA 0.09 0.81 0.6 250 70 0.3 1 0.65 450 V V V MHz 2.5 5 pF 2.5 15 dB 50 70 0.55 150 Max CLASSIFICATION Classification R P Q K hFE(2) 70-140 120-240 200-400 350-700 1-2 2002/01.rev.A PJC945 NPN Epitaxial Silicon Transistor 2-2 2002/01.rev.A