TN1A60 Sensitive Triac Symbol ○ TO-92 VDRM = 600V 3.T2 IT(RMS) = 1A ▼▲ ○ ITSM = 10A 2.Gate 1 1.T1 ○ 2 3 Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt ◆ ◆ General Description This device is suit able for low power AC switching application, phase control application such a s fan speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants. This device may substitute for Z0107MA. Absolute Maximum Ratings Symbol ( Tj = 25°C unless otherwise specified ) Parameter Condition Ratings Units V Repetitive Peak Off-State Voltage Sine wave, 50 to 60 Hz 600 IT(RMS) R.M.S On-State Current Tj = 110°C, Full Sine Wave 1.0 A ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 10 A 0.41 A2s 1 W VDRM I2 t PGM I2t for Fusing tp = 10ms Peak Gate Power Dissipation Average Gate Power Dissipation 0.1 W IGM Peak Gate Current 1 A TJ Operating Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 150 °C PG(AV) 1/5 May., 2010. Rev.1 copyright @ Apollo Electron Co., Ltd. All rights reserved. TN1A60 Electrical Characteristics (Tj =25°C unless otherwise specified) Ratings Symbol Items Conditions Unit Min. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave VTM Peak On-State Voltage ITM = 1 A, tp=380㎲ I+GT1 I I -GT1 II I -GT3 III I+GT3 IV V+GT1 I V-GT1 ,, V-GT3 III V+GT3 IV VGD dv/dt IH 2/5 Gate Trigger Current VD = 12V, RL=100 Ω Gate Trigger Voltage VD = 12V, RL=100 Ω - Typ. Max. - 0.5 mA - 1.6 V - - 10 - - 10 - - 10 mA - - 30 - - 1.8 - - 1.8 - - 1.8 - - 2.0 V Non-Trigger Gate Voltage VD=1/2 VDRM 0.1 - - V Critical Rate of Rise Off-State Voltage Tj = 110 °C VD=2/3 VDRM 5 - - V/㎲ Holding Current VD=12V, IT=0.1A - 25 mA TN1A60 Fig 1. Gate Characteristics Fig 2. On-State Voltage 1 10 1 VGM (6V) 25 ℃ I 25 ℃ 0 10 I I I On-State Current [A] PGM (1W) PG(AV) (0.1W) + GT3 + I GM (1A) Gate Voltage [V] 10 GT1 _ GT1 _ GT3 o TJ = 125 C 0 10 o TJ = 25 C VGD(0.2V) -1 -1 10 0 1 10 2 10 10 3 10 10 0.5 1.0 1.5 2.0 Allowable Case Temperature [ oC] 1.5 Power Dissipation [W] o π θ θ = 180o θ = 150 o θ = 120 o θ = 90 2π θ 360° 0.9 θ : Conduction Angle θ = 60 o θ = 30 o 0.6 0.3 0.0 0.0 0.2 0.4 0.6 3.0 3.5 4.0 0.8 1.0 120 110 100 90 80 π θ θ θ θ θ θ 2π 360° 60 θ : Conduction Angle 50 40 0.0 1.2 θ θ 70 0.2 0.4 0.6 0.8 o = 30 o = 60 o = 90 o = 120o = 150 o = 180 1.0 1.2 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 10 12 10 V V o 6 50Hz V V o VGT (25 C) 60Hz 8 VGT (t C) Surge On-State Current [A] 5.0 130 RMS On-State Current [A] 4 4.5 Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On State Current vs. Maximum Power Dissipation 1.2 2.5 On-State Voltage [V] Gate Current [mA] 1 + GT1 _ GT1 + GT3 _ GT3 2 0 0 10 1 10 Time (cycles) 2 10 0.1 -50 0 50 100 150 o Junction Temperature [ C] 3/5 TN1A60 Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 3 Rθ (J-A) o Transient Thermal Impedance [ C/W] 10 IGT (25 oC) IGT (t oC) I I I 1 I 0.1 -50 + GT3 2 10 Rθ (J-C) 1 10 0 0 50 100 o Junction Temperature [ C] 4/5 + GT1 _ GT1 _ GT3 150 10 -2 10 -1 10 0 10 1 10 Time (sec) 2 10 3 10 TN1A60 TO-92 Package Dimension Dim. mm Min. Inch Typ. A Max. Min. 4.2 Typ. Max. 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E F 0.4 4.43 4.83 G 0.016 0.174 0.190 0.45 0.017 H 2.54 0.100 I 2.54 0.100 J 0.33 0.48 A 0.013 0.019 E B F C G 1 D 2 3 H I 1. T1 2. Gate 3. T2 J 5/5