APOLLOELECTRON TN1A60

TN1A60
Sensitive Triac
Symbol
○
TO-92
VDRM = 600V
3.T2
IT(RMS) = 1A
▼▲
○
ITSM = 10A
2.Gate
1
1.T1 ○
2
3
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 1 A )
◆ High Commutation dv/dt
◆
◆
General Description
This device is suit able for low power AC switching application, phase control application such a s fan
speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants.
This device may substitute for Z0107MA.
Absolute Maximum Ratings
Symbol
( Tj = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
V
Repetitive Peak Off-State Voltage
Sine wave, 50 to 60 Hz
600
IT(RMS)
R.M.S On-State Current
Tj = 110°C, Full Sine Wave
1.0
A
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
10
A
0.41
A2s
1
W
VDRM
I2 t
PGM
I2t for Fusing
tp = 10ms
Peak Gate Power Dissipation
Average Gate Power Dissipation
0.1
W
IGM
Peak Gate Current
1
A
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
PG(AV)
1/5
May., 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
TN1A60
Electrical Characteristics (Tj =25°C unless otherwise specified)
Ratings
Symbol
Items
Conditions
Unit
Min.
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
VTM
Peak On-State Voltage
ITM = 1 A, tp=380㎲
I+GT1
I
I -GT1
II
I -GT3
III
I+GT3
IV
V+GT1
I
V-GT1
,,
V-GT3
III
V+GT3
IV
VGD
dv/dt
IH
2/5
Gate Trigger Current
VD = 12V, RL=100 Ω
Gate Trigger Voltage
VD = 12V, RL=100 Ω
-
Typ.
Max.
-
0.5
mA
-
1.6
V
-
-
10
-
-
10
-
-
10
­
mA
-
-
30
-
-
1.8
-
-
1.8
-
-
1.8
-
-
2.0
V
Non-Trigger Gate Voltage
VD=1/2 VDRM
0.1
-
-
V
Critical Rate of Rise Off-State
Voltage
Tj = 110 °C
VD=2/3 VDRM
5
-
-
V/㎲
Holding Current
VD=12V, IT=0.1A
-
­
25
mA
TN1A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
1
10
1
VGM (6V)
25 ℃
I
25 ℃
0
10
I
I
I
On-State Current [A]
PGM (1W)
PG(AV) (0.1W)
+
GT3
+
I GM (1A)
Gate Voltage [V]
10
GT1
_
GT1
_
GT3
o
TJ = 125 C
0
10
o
TJ = 25 C
VGD(0.2V)
-1
-1
10
0
1
10
2
10
10
3
10
10
0.5
1.0
1.5
2.0
Allowable Case Temperature [ oC]
1.5
Power Dissipation [W]
o
π
θ
θ = 180o
θ = 150
o
θ = 120
o
θ = 90
2π
θ
360°
0.9
θ : Conduction Angle
θ = 60
o
θ = 30
o
0.6
0.3
0.0
0.0
0.2
0.4
0.6
3.0
3.5
4.0
0.8
1.0
120
110
100
90
80
π
θ
θ
θ
θ
θ
θ
2π
360°
60
θ : Conduction Angle
50
40
0.0
1.2
θ
θ
70
0.2
0.4
0.6
0.8
o
= 30
o
= 60
o
= 90
o
= 120o
= 150
o
= 180
1.0
1.2
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
12
10
V
V
o
6
50Hz
V
V
o
VGT (25 C)
60Hz
8
VGT (t C)
Surge On-State Current [A]
5.0
130
RMS On-State Current [A]
4
4.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
1.2
2.5
On-State Voltage [V]
Gate Current [mA]
1
+
GT1
_
GT1
+
GT3
_
GT3
2
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
TN1A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
3
Rθ (J-A)
o
Transient Thermal Impedance [ C/W]
10
IGT (25 oC)
IGT (t oC)
I
I
I
1
I
0.1
-50
+
GT3
2
10
Rθ (J-C)
1
10
0
0
50
100
o
Junction Temperature [ C]
4/5
+
GT1
_
GT1
_
GT3
150
10
-2
10
-1
10
0
10
1
10
Time (sec)
2
10
3
10
TN1A60
TO-92 Package Dimension
Dim.
mm
Min.
Inch
Typ.
A
Max.
Min.
4.2
Typ.
Max.
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
A
0.013
0.019
E
B
F
C
G
1
D
2
3
H
I
1. T1
2. Gate
3. T2
J
5/5