TR4A60S Sensitive Gate Triac Symbol Features ◆ ◆ ○ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) 2.T2 ▼▲ ○ 1.T1 3.Gate ○ General Description This device is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. This device may substitute for Z0405MF, 2N6075, BT134-600 series. TO- 1 Absolute Maximum Ratings Symbol 2 3 ( Tj = 25°C unless otherwise specifed ) Parameter Condition Since wave, 50 to 60Hz Ratings Units 600 V 4.0 A VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current Tj = 125 °C, Full Sine wave ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 25/27 A I2 t tp= 10ms 3.1 A2 s I 2t PG(AV) PGM Average Gate Power Dissipation Peak Gate Power Dissipation Tj = 125 °C Tj=125°C Tj = 125 °C 0.5 W 5 W 2 A IGM Peak Gate Current TJ Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C TSTG 1/6 July, 2010. Rev. 2 copyright@Apollo Electron Co.,Ltd., All rights reserved. TR4A60S Electrical Characteristics Symbol 2/6 Items Conditions IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave Tj = 125 °C VTM Peak On-State Voltage ITM = 5.5A, tp=380㎲ Ratings Min. Typ. Max. --- --- 2.0 -- -- 1.7 ─ ─ 5 ─ - 5 ─ - 5 Unit mA V I+GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ I+GT4 ,9 1 0 � � � � �� � � ��� Gate Trigger Current VD = 12V, RL=30 Ω V+GT1 Ⅰ V-GT1 Ⅱ V GT3 Ⅲ V+GT4 IV VGD Non-Trigger Gate Voltage Tj = 125 °C, VD=VDRM RL=3.3kΩ 0.25 dv/dt Critical Rate of Rise Off-State Voltage Tj = 125 °C, VD=2/3 VDRM 20 IH Holding Current Gate Trigger Voltage VD = 12 V, RL=30 Ω --- --- 1.5 --- --- 1.5 ─ ─ 1.5 --- It=0.1A --- ----─ --- mA V 1.5 ─ ─ 10 V V/㎲ mA TR4A60S Fig 1. Gate Characteristics 10 Fig 2. On-State Voltage 2 1 10 VGK = 5V PGK = 5W On-State Current [A] 25℃ 10 0 IGM=2A Gate Voltage [V] PG(AV) = 0.5W 1 10 o 125 C 0 10 o 25 C VGD = 0.2V 10 10 -1 10 1 10 2 10 Gate Current [mA] 3 -1 0.5 2.0 2.5 3.0 Fig 4. On State Current vs. Allowable Case Temperature 7 θ 2π 5 360° 4 θ θ = 180 o θ = 150 o θ = 120 o : Conduction Angle 3 θ = 90 o θ = 60 o θ = 30 o o π θ Allowable Case Temperature [ C] 130 6 Power Dissipation [W] 1.5 On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 2 1 0 1.0 0 1 2 3 4 120 110 2π θ θ o o θ = 90 o o o θ = 150 o θ = 180 : Conduction Angle 0 θ = 30 θ = 60 θ = 120 360° 100 5 θ π 1 2 RMS On-State Current [A] 3 4 5 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 35 10 o 60Hz 15 10 o 20 VGT (25 C) 25 VGT (t C) Surge On-State Current [A] 30 1 50Hz 5 0 0 10 10 1 10 Time (cycles) 2 10 3 0.1 -50 0 50 100 150 o Junction Temperature [ C] 3/6 TR4A60S Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 1 10 0 o IGT (25 C) o IGT (t C) o Transient Thermal Impedance [ C/W] 10 1 I + I - I - GT1 GT1 GT3 I 0.1 -50 0 50 100 o Junction Temperature [ C] 4/6 + GT3 150 10 -1 10 -3 10 -2 10 -1 10 Time (sec) 0 10 1 10 2 TR4A60S TO-126 Package Dimension mm Dim. Min. Inch Typ. Max. Min. Typ. A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 H 0.047 0.059 2.3 I 0.091 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 φ 3.2 0.126 D A E B φ G F L 1 2 C 1. T1 2. T2 3. Gate 3 J H I 5/6 Max. K TR4A60S TO-126 Package Dimension, Forming mm Dim. Min. Inch Typ. Max. Min. Typ. A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 H 0.047 0.059 2.3 I 0.091 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 M 5.0 0.197 φ 3.2 0.126 A D E B φ L G F 3 2 C 1. Gate 2. T2 3. T1 1 M J H I 6/6 Max. K