HUASHAN HTF4A60S

Shantou Huashan Electronic Devices Co.,Ltd.
HTF4A60S
ＮＯＮ　ＩＮＳＵＬＡＴＥＤ　ＴＹＰＥ　ＳＥＮＳＩＴＩＶＥ　ＧＡＴＥ　ＴＲＩＡＣ　（ＴＯ－２２０Ｆ　ＰＡＣＫＡＧＥ）　█　Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=4A)
* High Commutation dv/dt * Sensitive Gate Triggering 4 Mode █　General Description
TO-220F
The devices is sensitive gate triac suitable for direct coupling to
TTL,HTL,CMOS and application such as various logic functions,
low power AC switching applications, such as fan speed, small light
controllers and home appliance equipment.　█ Absolute Maximum Ratings（Ta=25℃）　T stg ——Storage Temperature ……………………………………………………………… －40~125℃　T j ——Operating Junction Temperature …………………………………………………… －40~125℃　PGM ——Peak Gate Power Dissipation ……………………………………………………………1.5W
PG （AV） ——Average Gate Power Dissipation …………………………………………………… 0.1W
VDRM ——Repetitive Peak Off-State Voltage …………………………………………………… 600V
IT（RMS）——R.M.S On-State Current（Ta=95℃）………………………………………………… 4.0A
VGM ——Peak Gate Voltage ……………………………………………………………………… 7.0V
IGM ——Peak Gate Current ……………………………………………………………………… 1.0A
ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 30/33A
Shantou Huashan Electronic Devices Co.,Ltd.
HTF4A60S
█ Electrical Characteristics （Ta=25℃）
Symbol
IDRM
Items
Min.
Repetitive Peak Off-State Current
Typ.
Max.
Unit
1.0
mA
Conditions
VD =VDRM, Single Phase,
Half Wave,
VTM
Peak On-State Voltage
1.6
V
T J=125℃
IT=6A, Inst. Measurement
I+GT1
Gate Trigger Current（Ⅰ）
5.0
mA
VD =6V, RL =10 ohm
I-GT1
Gate Trigger Current（Ⅱ）
5.0
mA
VD =6V, RL =10 ohm
I-GT3
Gate Trigger Current（Ⅲ）
5.0
mA
VD =6V, RL =10 ohm
I+GT3
Gate Trigger Current（Ⅳ）
10.0
mA
VD =6V, RL =10 ohm
V+GT1
Gate Trigger Voltage（Ⅰ）
1.4
V
VD =6V, RL =10 ohm
V-GT1
Gate Trigger Voltage（Ⅱ）
1.4
V
VD =6V, RL =10 ohm
V-GT3
Gate Trigger Voltage（Ⅲ）
1.4
V
VD =6V, RL =10 ohm
V+GT3
Gate Trigger Voltage（Ⅳ）
1.8
V
VD =6V, RL =10 ohm
0.2
V
T J=125℃,VD =1/2VDRM
5
V/µS
T J=125℃,VD =2/3VDRM
VGD
(dv/dt)c
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
(di/dt)c= -0.5A/ms
IH
Rth(j-c)
Holding Current
10
mA
Thermal Resistance
3
℃/W
Junction to case
Shantou Huashan Electronic Devices Co.,Ltd.
HTF4A60S
█　Performance Curves
Gate Characteristics
Fig 2. On-State Voltage
On-state Current [A]
On-state Voltage (V)
Fig 1.
Gate
Current（mA）
On-state Voltage（V）
Fig 3. Gate Trigger Voltage vs. Junction
Fig 4. On State Current vs. Maximum
Power Dissipation
Power Dissipation [W]
Temperature
Junction Temperature [℃］
RMS On-state current [A]
Fig 5. On State Current vs.
Fig 6. Surge On-State Current Rating
( Non-Repetitive )
Surge On-state Current [A]
Allowable Case Temp. [°C]
Allowable Case Temperature
RMS On-state Current [A]
Time（Cycles）
Shantou Huashan Electronic Devices Co.,Ltd.
HTF4A60S
Fig 7. Gate Trigger Current vs.
Fig 8. Transient Thermal Impedance
Junction Temperature
Impedance [℃/W ]
Transient Thermal
Junction Temperature [℃］　Fig 9. Gate Trigger Characteristics Test Circuit
Ｔｉｍｅ（ｓｅｃ）
Junction Temperature [℃］
Fig 9. Gate Trigger Characteristics Test Circuit　１０Ω　Test ProcedureⅠ
１０Ω　Test ProcedureⅡ
１０Ω　Test Procedure Ⅲ
１０Ω　Test Procedure Ⅳ