CALOGIC VN0605T

VN0605T
N-Channel Enhancement-Mode
MOS Transistor
CORPORATION
VN0605T
FEATURES
ORDERING INFORMATION
• Low rDS(on) <5Ω
• Low cost
Part
Package
Temperature Range
-55oC to +150oC
VN0605T
Surface Mount SOT-23
For sorted chips in carriers see 2N7000
APPLICATIONS
• Switching
• Amplification
PIN CONNECTIONS
SOT-23
TOP VIEW
1
D
2
1
G
3
3
S
2
CD5
1 DRAIN
2 SOURCE
3 GATE
PRODUCT MARKING
VN0605T
V05
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
SYMBOL
PARAMETERS/TEST CONDITIONS
LIMITS
VDS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±30
ID
Continuous Drain Current
IDM
Pulsed Drain Current1
PD
Power Dissipation
TA = 25oC
o
TA = 100 C
UNITS
V
0.18
0.11
A
0.72
TA = 25oC
0.36
TA = 100 oC
0.14
TJ
Operating Junction Temperature Range
-55 to 150
Tstg
Storage Temperature Range
-55 to 150
TL
Lead Temperature (1/16" from case for 10 sec.)
W
o
C
300
THERMAL RESISTANCE RATINGS
SYMBOL
RthJA
1
THERMAL RESISTANCE
Junction-to-Ambient
Pulse width limited by maximum junction temperature.
LIMITS
UNITS
350
K/W
VN0605T
CORPORATION
SPECIFICATIONSa
SYMBOL
LIMITS
PARAMETER
TYPb
MIN
70
60
MAX
UNIT
TEST CONDITIONS
STATIC
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate-Threshold Voltage
IGSS
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
V
2.3
0.8
3.0
±100
±500
1
ID = 10µA, VGS = 0V
VDS = VGS, I D = 1mA
nA
µA
VGS = ±20V, VDS = 0V
TJ = 125oC
VDS = 50V, VGS = 0V
TJ = 125oC
500
ID(ON)
rDS(ON)
gFS
gOS
On-State Drain Currentc
Drain-Source On-Resistance
700
c
Forward Transconductancec
Common Source Output Conductance
mA
4.5
7.5
3
5
5.5
10
180
c
500
80
500
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 50mA
Ω
VGS = 10V, ID = 0.5A
TJ = 125oC
mS
VDS = 10V, ID = 0.2A
µS
VDS = 50V, ID = 50mA
pF
VDS = 25V, VGS = 0V, f = 1MHz
DYNAMIC
Ciss
Input Capacitance
16
60
Coss
Output Capacitance
11
25
Crss
Reverse Transfer Capacitance
2
5
tON
Turn-On Time
7
20
tOFF
Turn-Off Time
11
20
SWITCHING
ns
Notes:
a. T A = 25oC unless otherwise noted.
b. For design aid only, not subject to production testing.
c. Pulse test; PW = ≤300µS, duty cycle ≤2%.
VDD = 30V, RL = 150Ω, ID = 0.2A
VGEN = 10V, RG = 25Ω
(Switching time is essentially independent of
operating temperature)