TIGER ELECTRONIC CO.,LTD Product specification KSC2334 NPN Epitaxial Silicon Transistor DESCRIPTION High Speed Switching Industrial Use ◆ Complement to KSA1010 O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 7 V Collector Current IC 7.0 A Base Current IB 3.5 A Ptot 40 W Tj 150 -55~15 o Tstg 0 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-220 O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=100V, IE=0 — — 10 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 — — 10 μA Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0 100 — — V hFE(1) VCE=5.0V, IC=0.5A 40 — — hFE(2) VCE=5.0V, IC=3.0A 40 — 240 hFE(3) VCE=5.0V, IC=5.0A 20 — — Collector-Emitter Saturation Voltage VCE(sat) IC=5.0A,IB=500mA — — 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=5.0A,IB=500mA — — 1.5 V — 0.5 — μs DC Current Gain tS Storage Time hFE(2) R: 40 ~ 80 O: 70 ~ 140 Y: 120 ~ 240 IB1 = -IB2 = 0.5A RL = 10Ω