TIGER ELECTRONIC CO.,LTD Product specification MJE13005 Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. Absolute Maximum Ratings ( Ta = 25 Parameter ) Symbol Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4.0 A Base Current IB 2.0 A Ptot 75 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature Electrical Characteristics ( Ta = 25 Parameter C C TO-220 ) Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCE=700V, IE=0 1.0 mA Emitter Cut-off Current IEBO VEB=9V, IC=0 1.0 mA Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0 400 hFE(1) VCE=5V, IC=1.0A 15 21 hFE(2) VCE=5V, IC=1.0A 21 32 DC Current Gain V Collector-Emitter Saturation Voltage VCE(sat) IC=4.0A,IB=1.0A 1.0 V Base-Emitter Saturation Voltage VBE(sat) IC=2.0A,IB=0.5A VCE=10V, IC=0.5A fT 1.6 V Current Gain Bandwidth Product Output Capacitance Turn Off Time 4 MHz Cob VCB=10V,IE=0,f=0.1MHz 65 tS IB1=-IB2=1.6A,TP=25 s 2.5 pF 4.0 us