TIGER ELECTRONIC CO.,LTD Product specification KSC5027 High Voltage and High Reliability DESCRIPTION NPN Silicon Transistor High Speed Switching ■ Wide SOA ■ ■ Absolute Maximum Ratings ( Ta = 25℃ ) Parameter l Value Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 3.0 A Base Current IB 1.5 A Ptot 50 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C TO-220 C Electrical Characteristics ( Ta = 25℃ ) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCE=800V, IE=0 — — 10 uA Emitter Cut-off Current IEBO VEB=5V, IC=0 — — 10 uA Collector-Emitter Sustaining Voltage VCEO IC=10mA, IB=0 800 — — V hFE(1) VCE=5V, IC=0.2A 10 — 40 hFE(2) VCE=5V, IC=1.0A 8 — — DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A,IB=0.3A — — 2.0 V Base-Emitter Saturation Voltage VBE(sat) IC=1.5A,IB=0.3A — — 1.5 V VCE=10V, IC=0.2A — 15 — MHz VCB=10V,IE=0,f=1.0MHz — 60 — pF IC=5IB1=-2.5IB2=2.0A, — — 3.0 us fT Current Gain Bandwidth Product Cob Output Capacitance tS Turn Off Time hFE Classification Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40