INCHANGE Semiconductor Product Specification MJE13003D Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ INCHANGE Semiconductor Product Specification MJE13003D Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 9 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.25A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.5A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 1.2 V ICBO Collector Cutoff Current VCB= 700V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 400V; IB= 0 250 μA hFE-1 DC Current Gain IC= 1mA ; VCE= 5V 7 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 10 hFE-3 DC Current Gain IC= 2A ; VCE= 5V 5 VECF C-E Diode Forward Voltage IF= 2A B B 40 2.0 V 3.5 μs 0.8 μs Switching Times ts Storage Time IC= 0.25A; VCC= 5V tf Fall Time