TI THS9001DBVR

THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
50 MHz to 350 MHz CASCADEABLE AMPLIFIER
FEATURES
APPLICATIONS
•
•
•
•
•
High Dynamic Range
– OIP3 = 36 dBm
– NF < 4.5 dB
Single Supply Voltage
High Speed
– VS = 3 V to 5 V
– IS = Adjustable
Input / Output Impedance
– 50 Ω
IF Amplifier
– TDMA: GSM, IS-136, EDGE/UWE-136
– CDMA: IS-95, UMTS, CDMA2000
– Wireless Local Loop
– Wireless LAN: IEEE802.11
DESCRIPTION
The THS9001 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier
incorporates internal impedance matching to 50 Ω and achieves greater than 15-dB input and output return loss
from 50 MHz to 350 MHz with VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH. Design requires only 2 dc-blocking
capacitors, 1 power-supply bypass capacitor, 1 RF choke, and 1 bias resistor.
Functional Block Diagram
VS
THS9001
IF(IN)
R(BIAS)
1
6
2
5
CIN
IF(OUT)
COUT
3
4
L(COL)
C(BYP)
VS
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2004, Texas Instruments Incorporated
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICES
PACKAGE TYPE
THS9001DBVT
TRANSPORT MEDIA, QUANTITY
Tape and Reel, 250
SOT-23-6
THS9001DBVR
Tape and Reel, 3000
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature (unless otherwise noted) (1)
UNIT
Supply voltage, GND to VS
5.5 V
Input voltage
GND to VS
Continuous power dissipation
See Dissipation Ratings Table
Maximum junction temperature, TJ
150°C
Maximum junction temperature, continuous operation, long term reliability, TJ
(2)
125°C
Storage temperature, Tstg
-65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
ESD Ratings
(1)
(2)
300°C
HBM
2000
CDM
1500
MM
100
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
(1)
(2)
POWER RATING (1)
PACKAGE
ΘJC
(°C/W)
ΘJA
(°C/W)
TA≤ 25°C
TA = 85°C
DBV (2)
70.1
216
463 mW
185 mW
Power rating is determined with a junction temperature of 125°C. Thermal management of the final PCB should strive to keep the
junction temperature at or below 125°C for best performance.
This data was taken using the JEDEC standard High-K test PCB.
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
Supply voltage
2.7
5
V
Operating free-air temperature, TA
-40
85
°C
Supply current
2
100
mA
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
ELECTRICAL CHARACTERISTICS
Typical Performance (VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH) (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Gain
OIP3
1-dB compression
Input return loss
Output return loss
Reverse isolation
Noise figure
MIN
TYP
f = 50 MHz
15.8
f = 350 MHz
15.0
f = 50 MHz
35
f = 350 MHz
37
f = 50 MHz
20.6
f = 350 MHz
20.6
f = 50 MHz
15.4
f = 350 MHz
16.6
f = 50 MHz
17
f = 350 MHz
15
f = 50 MHz
20.7
f = 350 MHz
20.7
f = 50 MHz
3.7
f = 350 MHz
4
MAX
UNITS
dB
dBm
dBm
dB
dB
dB
dB
PIN ASSIGNMENT
IF(IN)
1
6
GND
2
5
VS
3
4
BIAS
IF(OUT)
L(COL)
Terminal Functions
Pin Numbers
Name
1
IF(IN)
Description
Signal input
2
GND
Negative power supply input
3
VS
Positive power supply input
4
L(COL)
Output transistor load inductor
5
IF(OUT)
Signal output
6
BIAS
Bias current input
SIMPLIFIED SCHEMATIC
VS
L(COL)
Bias
IF(OUT)
IF(IN)
GND
3
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
FIGURE
IS
S21 Frequency response
1
S22 Frequency response
2
S11 Frequency response
3
S12 Frequency response
4
S21 vs R(Bias)
5
Output power vs Input power
6
OIP2 vs Frequency
7
Noise figure vs Frequency
8
OIP3 vs Frequency
9
Supply current vs R(Bias)
10
S21 Frequency response
11
S22 Frequency response
12
S11 Frequency response
13
S12 Frequency response
14
Noise figure vs Frequency
15
OIP2 vs Frequency
16
Output power vs Input power
17
OIP3 vs Frequency
18
S-Parameters of THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 68 nH to 470 nH
at room temp.
S21 FREQUENCY RESPONSE
S22 FREQUENCY RESPONSE
17
0
L(COL) = 470 nH
16
L(COL) = 100 nH
L(COL) = 220 nH
L(COL) = 330 nH
VS = 5 V,
R(BIAS) = 237,
L(COL) = 68 nH
−5
S22 − dB
S21 − dB
15
14
13
L(COL) = 220 nH
L(COL) = 100 nH
12
−15
L(COL) = 68 nH
11
10
4
−10
L(COL) = 470 nH
VS = 5 V,
R(BIAS) = 237,
1M
10 M
100 M
L(COL) = 330 nH
−20
1G
1M
10 M
100 M
f − Frequency − Hz
f − Frequency − Hz
Figure 1.
Figure 2.
1G
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
S11 FREQUENCY RESPONSE
S12 FREQUENCY RESPONSE
−15
0
VS = 5 V,
R(BIAS) = 237
L(COL) = 68 nH
−5
L(COL) = 470 nH
−20
L(COL) = 100 nH
L(COL) = 330 nH
L(COL) = 220 nH
−15
−20
−25
S12 − dB
S11 − dB
−10
L(COL) = 330 nH
−25
L(COL) = 220 nH
−30
L(COL) = 470 nH
L(COL) = 100 nH
−30
L(COL) = 68 nH
−35
VS = 5 V,
R(BIAS) = 237,
−35
−40
1M
10 M
100 M
f − Frequency − Hz
−40
1M
1G
10 M
100 M
1G
f − Frequency − Hz
Figure 3.
Figure 4.
S-Parameters of THS9001 as mounted on the EVM with VS = 3 V and 5 V, R(BIAS) = various, and L(COL) = 470 nH
at room temp.
S21
vs
R(BIAS)
OUTPUT POWER
vs
INPUT POWER
17
22
R(BIAS) = 56.2 , VS = 3 V
16
S21 − dB
PO − Output Power − dBm
20
15
R(BIAS) = 237 ,
VS = 5 V
R(BIAS) = 97.7, VS = 3 V
14
R(BIAS) = 340 , VS = 5 V
13
VS = 5 V, IS = 99 mA
21
R(BIAS) = 549 VS = 5 V
12
VS = 5 V, IS = 75 mA
19
VS = 5 V, IS = 50 mA
18
17
16
15
VS = 3 V, IS = 94 mA
14
VS = 3 V, IS = 70 mA
13
R(BIAS) = 174 , VS = 3 V
12
11
VS = 3 V to 5 V,
L(col) = 470 nH
f = 100 MHz
10
1M
10 M
100 M
f − Frequency − Hz
Figure 5.
VS = 3 V, IS = 49 mA
11
1G
10
−6
−4
−2
0
2
4
6
8
PI − Input Power − dBm
10
12
14
Figure 6.
5
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
OIP2
vs
FREQUENCY
NOISE FIGURE
vs
FREQUENCY
5
50
L(COL) = 470 nH
VS = 3 V,
IS = 94 mA
48
VS = 5 V,
IS = 99 mA
4.75
VS = 5 V, IS = 99 mA
Noise Figure − dB
OIP2 − dBm
VS = 5 V, IS = 75 mA
4.5
46
44
42
VS = 5 V,
IS = 75 mA
40
VS = 3 V,
IS = 70 mA
VS = 3 V, IS = 94 mA
4.25
VS = 5 V, IS = 50 mA
4
VS = 3 V, IS = 49 mA
3.75
VS = 3 V, IS = 70 mA
3.5
38
36
40
0
50
150
100
250
200
f − Frequency − MHz
3
50
300
250
350
450
500
f − Frequency − MHz
Figure 8.
OIP3
vs
FREQUENCY
SUPPLY CURRENT
vs
R(BIAS)
200
L(COL) = 470 nH
VS = 5 V, IS = 99 mA
36
150
Figure 7.
38
OIP3 − dBm
3.25
VS = 5 V,
IS = 50 mA
180
160
VS = 5 V, IS = 75 mA
34
VS = 3 V, IS = 94 mA
VS = 3 V, IS = 70 mA
32
VS = 5 V, IS = 50 mA
30
28
I S − Supply Current − mA
34
VS = 3 V,
IS = 49 mA
140
120
VS = 5 V
100
80
VS = 3 V
60
VS = 3 V, IS = 49 mA
26
24
0
40
100
200
300
f − Frequency − MHz
Figure 9.
6
400
500
20
50
150
250
350
R(BIAS) − Figure 10.
450
550
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 470 nH at 40°C, 25°C, and 85°C.
S21 FREQUENCY RESPONSE
S22 FREQUENCY RESPONSE
17
0
−45C
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
−2
16
−4
25C
15
−6
85C
S22 − dB
S21 − dB
−8
14
13
−10
85C
−12
−14
12
25C
−16
VS = 5 V,
R(BIAS) = 237 ,
L(col) = 470 nH
11
10
1M
10 M
100 M
f − Frequency − Hz
−18
−45C
−20
1G
1M
10 M
Figure 11.
S12 FREQUENCY RESPONSE
−15
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
−5
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
−20
−10
−45C
−15
S12 − dB
S11 − dB
1G
Figure 12.
S11 FREQUENCY RESPONSE
0
100 M
f − Frequency − Hz
85C
−20
−25
25C
−25
85C
−30
−30
−35
−45C
−40
−35
25C
−45
1M
10 M
100 M
1G
−40
1M
10 M
100 M
f − Frequency − MHz
f − Frequency − Hz
Figure 13.
Figure 14.
1G
7
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
NOISE FIGURE
vs
FREQUENCY
OIP2
vs
FREQUENCY
48
6
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
5.5
47
85C
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
−45C
5
OIP2 − dBm
Noise Figure − dB
46
25C
4.5
45
25C
85C
44
43
4
42
−45C
3.5
3
41
0
100
200
300
400
40
50
500
100
Figure 15.
Figure 16.
OUTPUT POWER
vs
INPUT POWER
OIP3
vs
FREQUENCY
22
25C
39
300
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
85C
38
−45C
25C
19
OIP3 − dBm
PO − Output Power − dBm
250
40
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
f = 100 MHz
20
85C
18
37
36
17
35
16
34
15
33
14
−2
0
2
4
6
8
PI − Input Power − dBm
Figure 17.
8
200
f − Frequency − MHz
f − Frequency − MHz
21
150
10
12
32
50
−45C
100
150 200
250 300 350 400 450 500
f − Frequency − MHz
Figure 18.
THS9001
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SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS
S-Parameters Tables of THS9001 with EVM De-Embedded
VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH
S21
Frequency
(MHz)
S11
Gain (dB)
Phase (deg)
Gain (dB)
1.0
-3.5
-165.0
5.0
11.7
-127.1
10.2
15.8
19.7
S22
S12
Phase (deg)
Gain (dB)
Phase (deg)
Gain (dB)
Phase (deg)
-2.3
-1.1
-2.6
174.8
-64.4
-121.7
-1.5
-14.9
-2.8
140.4
-32.4
123.0
-150.1
-2.2
-42.3
-5.3
99.8
-23.6
79.5
16.3
-170.8
-6.6
-69.3
-10.7
64.5
-21.1
40.7
50.1
15.9
175.7
-16.2
-90.3
-16.2
33.9
-20.6
14.5
69.7
15.8
171.5
-21.1
-95.4
-16.9
26.4
-20.6
9.4
102.4
15.7
165.7
-32.3
-86.5
-17.1
19.9
-20.6
5.3
150.5
15.6
158.2
-28.0
45.9
-16.8
14.7
-20.7
2.1
198.1
15.5
151.1
-21.9
46.8
-16.2
10.8
-20.7
0.1
246.9
15.3
144.1
-18.9
37.2
-15.3
6.0
-20.7
-1.4
307.6
15.2
135.3
-16.0
27.8
-14.2
-1.8
-20.6
-3.9
362.8
15.0
127.8
-14.2
17.4
-13.3
-9.2
-20.6
-5.9
405.0
14.9
121.9
-12.8
10.9
-12.6
-16.0
-20.6
-8.2
452.2
14.7
115.4
-11.6
3.0
-11.8
-23.9
-20.6
-10.8
504.7
14.5
108.4
-10.3
-6.0
-10.9
-33.0
-20.7
-14.2
563.4
14.4
100.3
-8.9
-17.4
-9.8
-45.2
-20.9
-19.3
595.3
14.2
96.0
-8.2
-23.3
-9.2
-52.2
-21.0
-22.6
664.5
14.1
87.0
-6.7
-36.9
-8.0
-68.3
-21.7
-30.5
702.1
14.0
80.9
-5.9
-44.6
-7.3
-79.1
-22.5
-38.6
741.8
13.9
76.5
-5.1
-54.0
-6.8
-91.4
-24.0
-44.9
828.1
13.5
62.2
-4.3
-76.1
-6.3
-113.2
-26.5
-35.0
874.9
13.0
54.0
-4.1
-84.6
-5.9
-126.0
-27.0
-49.0
924.4
12.8
44.9
-3.6
-93.1
-5.1
-136.8
-28.0
-62.9
976.7
11.6
35.9
-3.5
-104.4
-5.3
-157.8
-34.0
-104.4
1031.9
11.1
33.0
-3.4
-115.7
-5.8
-172.3
-37.1
107.9
1090.3
10.4
29.2
-3.3
-122.0
-5.7
-173.4
-37.8
162.5
1151.9
10.3
22.2
-3.0
-131.3
-4.8
179.4
-31.1
169.5
1217.1
9.7
4.7
-2.9
-142.3
-3.9
161.9
-26.3
137.1
1285.9
8.6
0.7
-2.9
-151.7
-3.6
147.6
-22.7
121.9
1358.6
7.3
-8.3
-2.9
-161.2
-3.4
134.6
-20.6
116.5
1435.5
5.8
-14.5
-3.0
-170.1
-3.2
122.6
-18.8
105.2
1516.6
4.6
-22.7
-3.1
-178.6
-3.2
112.1
-17.2
96.0
1602.4
3.2
-28.4
-3.1
173.2
-3.1
101.7
-15.7
87.0
1693.0
1.5
-38.0
-3.1
165.1
-3.0
92.4
-14.3
79.2
1788.8
-0.5
-47.9
-3.1
157.6
-2.9
83.6
-13.1
68.8
1889.9
-2.5
-51.0
-3.2
148.8
-2.7
74.4
-12.4
56.9
1996.8
-4.1
-49.0
-3.4
139.5
-2.3
65.0
-12.2
48.2
9
THS9001
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APPLICATION INFORMATION
The THS9001 is a medium power, cascadeable, amplifier optimized for high intermediate frequencies in radios.
The amplifier is unconditionally stable and design requires only 2 dc-blocking capacitors, 1 power-supply bypass
capacitor, 1 RF choke, and 1 bias resistor. Refer to Figure 24 for circuit diagram.
The THS9001 operates with a power supply voltage ranging from 2.5 V to 5.5 V.
The value of R(BIAS) sets the bias current to the amplifier. Refer to Figure 10. This allows the designer to trade-off
linearity versus power consumption. R(BIAS) can be removed without damage to the device.
Component selection of C(BYP), CIN, and COUT is not critical. The values shown in Figure 24 were used for all the
data shown in this data sheet.
The amplifier incorporates internal impedance matching to 50 Ω that can be adjusted for various frequencies of
operation by proper selection of L(COL).
Figure 19 shows the s-parameters of the part mounted on the standard EVM with VS = 5 V, R(BIAS) = 237Ω , and
L(COL) = 470 nH. With this configuration, the part is very broadband, and achieves greater than 15-dB input and
output return loss from 50 MHz to 325 MHz.
17
S11
S22
16
0
VS = 5 V,
R(BIAS) = 237 ,
L(COL) = 470 nH
−5
S21 − dB
−10
14
−15
13
S12
−20
12
S11, S12, S22 − dB
S21
15
−25
11
10
−30
1M
10 M
100 M
1G
f − Frequency − Hz
Figure 19. S-Parameters of THS9001 Mounted on the Standard EVM With VS = 5 V, R(BIAS) = 237 Ω,
and L(COL) = 470 nH
10
THS9001
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APPLICATION INFORMATION (continued)
Figure 20 Shows an example of a single conversion receiver architecture and where the THS9001 would
typically be used.
900 MHz − 2 GHz
900 MHz − 2 GHz
Image Rejection
Filter
LNA 2
LNA 1
LO Drive
Amp 1
RX LO
IF Amp 2
IF Amp 1
Mixer
IF SAW
PGA
IF SAW
ADC
LO Drive
Amp 2
THS9001
2x for Diversity
Figure 20. Example Single Conversion Receiver Architecture
Figure 21 shows an example of a dual conversion receiver architecture and where the THS9001 would typically
be used.
900 MHz − 2 GHz
LNA 1
100 MHz − 300 MHz
1st IF Amp
Image Reject
Filter 1st Mixer
1st IF SAW PGA
LNA 2
LO1 Drive LO1 Drive
Amp 2
RX LO 1 Amp 1
20 MHz − 70 MHz
2nd IF Amp1
2nd IF SAW 2nd IF
Amp2
2nd Mixer
Alias Filter
ADC
LO2 Drive LO2 Drive
Amp 1
Amp 2
RX LO2
THS9001
2x for Diversity
Figure 21. Example Dual Conversion Receiver Architecture
Figure 22 shows an example of a dual conversion transmitter architecture and where the THS9001 would
typically be used.
BB
100 MHz − 300 MHz
900 MHz − 2 GHz
1st IF amp
DAC
RX LO1
BB Amp
Alias Filter 1st Mixer
LO1 Drive LO1 Drive
Amp 2
Amp 1
IF SAW
RX LO2
PGA
2nd Mixer
PA
LO2 Drive LO2 Drive
Amp 2
Amp 1
THS9001
2x for Diversity
Figure 22. Example Dual Conversion Transmitter Architecture
11
THS9001
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APPLICATION INFORMATION (continued)
Figure 23 shows the THS9001 and Sawtek #854916 SAW filter frequency response along with the frequency
response of the SAW filter alone. The SAW filter has a center frequency of 140 MHz with 10-MHz bandwidth and
8-dB insertion loss. It can be seen that the frequency response with the THS9001 is the same as with the SAW
except for a 15-dB gain. The THS9001 is mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 Ω, and
L(COL) = 470 nH. Note the amplifier does not add artifacts to the signal.
SAW + THS90001
SAW
THS9001
RED =
SAW
140 MHz
SAW Only
GREEN =
140 MHz SAW: Sawtek #854916
Figure 23. Frequency Response of the THS9001 and SAW Filter, and SAW Filter Only
VS
THS9001
IF(IN)
CIN
R(BIAS)
1
6
2
5
1 nF
COUT
IF(QUT)
1 nF
3
4
L(COL)
C(BYP)
0.1 F
VS
Figure 24. THS9001 Recommended Circuit (Used for all Tests)
12
THS9001
www.ti.com
SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
APPLICATION INFORMATION (continued)
Evaluation Module
Table 1 is the bill of materials, and Figure 25 and Figure 26 show the EVM layout.
Bill Of Materials
ITEM
(1)
DESCRIPTION
1
Cap, 0.1 µF, ceramic, X7R, 50 V
2
Cap, 1000 pF, ceramic, NPO, 100 V
3
4
5
Open
6
7
8
Standoff, 4-40 Hex, 0.625" Length
REF DES
QTY
PART NUMBER (1)
C1
1
(AVX) 08055C104KAT2A
C2, C3
2
(AVX) 08051A102JAT2A
Inductor, 470 nH, 5%
L1
1
(Coilcraft) 0805CS-471XJBC
Resistor, 237 Ω, 1/8 W, 1%
R1
1
(Phycomp) 9C08052A2370FKHFT
TR1
1
Jack, banana receptance, 0.25" dia.
J3, J4
2
(SPC) 813
Connector, edge, SMA PCB jack
J1, J2
2
(Johnson) 142-0701-801
4
(KEYSTONE) 1808
4
SHR-0440-016-SN
9
Screw, Phillips, 4-40, .250"
10
IC, THS9001
11
Board, printed-circuit
U1
1
(TI) THS9001DBV
1
(TI) EDGE # 6453522 Rev.A
The manufacturer's part numbers are used for test purposes only.
Figure 25. EVM Top Layout
Figure 26. EVM Bottom Layout
13
THS9001
www.ti.com
SLOS426A – NOVEMBER 2003 – REVISED FEBRUARY 2004
0.085
0.053
0.008
Pin 1
0.040
0.032
0.032
Top View
Figure 27. THS9001 Recommended Footprint (dimensions in inches)
14
PACKAGE OPTION ADDENDUM
www.ti.com
30-Mar-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
THS9001DBVR
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
THS9001DBVT
ACTIVE
SOT-23
DBV
6
250
CU NIPDAU
Level-1-260C-UNLIM
Green (RoHS &
no Sb/Br)
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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