Preliminary Preliminary Product Description Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device is easily matched as ΓOPT is very close to 50 ohms. This device provides high gain, low NF, and excellent linearity at a low cost. SGA-8343 Low Noise, High Gain SiGe HBT Product Features 40 2.4 35 30 2.1 1.8 FMIN 25 20 15 10 Gain 5 0 0 1 1.5 1.2 0.9 0.6 Gmax 2 3 4 5 Frequency (GHz) FMIN (dB) Gain, Gmax (dB) Typical Gain Performance 0.3 0 6 7 • 6 GHz Useful Bandwidth • Low FMIN: 0.9 dB @ 0.9 GHz 1.1 dB @ 1.9 GHz • High Gain (Gmax): 24 dB @ 0.9 GHz 19 dB @ 1.9 GHz • Easily Matched with |ΓOPT| = 0.17 @ 1.9 GHz • OIP3 = +28.5 dBm, P1dB = +13 dBm • Low Cost High Performance SiGe HBT Applications • LNA for Wireless Infrastructure 8 • Fixed Wireless Infrastructure • Wireless Data • Driver Stage for Low Power Applications • Oscillators Symbol Device Characteristics, T = 25ºC VCE=3V, ICQ=10mA (unless otherw ise noted) Units Min. Typ. Maximum Available Gain ZS=ZS*, ZL=ZL* f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz dB 23.9 19.3 17.7 S 21 Insertion Gain ZS=ZL=50Ω f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz dB 21.8 16.3 14.3 Fmin Minimum Noise Figure ZS=ΓOPT, ZL=ZLOPT f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz dB 0.9 1.1 1.2 P 1dB Output 1 dB compression point ZS=ZSOPT, ZL=ZLOPT VCE=2V, ICQ=20 mA VCE=3V, ICQ=20 mA dB m 10.0 13.3 OIP3 Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT VCE=2V, ICQ=20 mA VCE=3V, ICQ=20 mA dB m 24.0 28.5 GMAX hFE DC Current Gain B V C EO Collector - Emitter Breakdown Voltage V Rth Thermal Resistance (junction to lead) ºC/W 120 180 5.7 6.0 Max. 300 200 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101845 Rev. A Preliminary SGA-8343 Low Noise SiGe HBT Typical Performance - Deembedded S-Parameters -5 -10 25 20 15 10 -15 -20 -25 -30 Isolation Gmax Gain 5 0 0 1 2 3 4 -35 -40 5 6 7 8 Gain, Gmax (dB) 35 30 Gain vs Frequency (2V,10mA) 40 35 30 25 20 Isolation 15 10 Gain 5 0 0 1 2 3 -35 -40 4 5 6 7 8 Frequency (GHz) S11,S22 vs Frequency (2V,10mA) 1.0 1.0 2.0 0.5 2.0 0.5 8 GHz 8 GHz 6 GHz 6 GHz 0.2 0.2 5.0 3 GHz 5.0 4 GHz 4 GHz 0.2 -25 -30 Gmax Frequency (GHz) S11,S22 vs Frequency (3V,10mA) 0.0 0 -5 -10 -15 -20 Isolation (dB) 0 Isolation (dB) Gain, Gmax (dB) Gain vs Frequency (3V,10mA) 40 3 GHz 0.5 1.0 2.0 5.0 0.0 inf 0.2 0.5 1.0 2.0 5.0 inf 2 GHz 2 GHz S22 S22 0.2 0.2 5.0 5.0 1 GHz 1 GHz S11 S11 0.5 2.0 0.5 2.0 1.0 1.0 Note: S-parameters are de-embedded to the device leads with Z S=Z L=50Ω. The data represents typical performace of the device. Deembedded s-parameters can be downloaded from our website (www.stanfordmicro.com). Typical Performance - P1dB, OIP3, Gain Freq (MH z ) VCE (V) 2 900 3 2 1900 3 2 2400 3 726 Palomar Ave., Sunnyvale, CA 94085 ICQ (mA) P 1d B (dB m) OIP 3 (dB m) Gain (dB ) ZLOPT Mag ∠ Ang 0.50 ∠ 143.3 10 10.0 22.0 25.0 20 10.2 24.0 24.0 0.24 ∠ 16.6 10 13.0 24.5 24.4 0.36 ∠ 16.2 20 13.3 28.0 24.4 0.36 ∠ 16.2 10 10.0 23.0 16.7 0.43 ∠ 91.2 20 10.2 26.0 16.4 0.32 ∠ 24.1 10 13.0 26.0 18.0 0.54 ∠ 15.2 20 13.3 28.5 18.0 0.38 ∠ 14.0 10 10.0 23.0 15.0 0.31 ∠ 45.0 20 10.2 24.0 15.0 0.29 ∠ 33.3 10 13.0 27.5 15.3 0.44 ∠ 9.2 20 13.3 29.0 15.3 0.36 ∠ 13.3 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101845 Rev. A Preliminary SGA-8343 Low Noise SiGe HBT Typical Performance - Noise Parameters Noise Figure (3V, 10mA) Gamma Opt (3V, 10mA) 2.4 1.0 30 FMIN 2 1.2 15 0.8 10 FMIN (dB) 20 0.2 5.0 2.4 GHz 0.0 GAS 0.4 GAS (dB) 1.6 0.2 5 0 1 2 3 4 5 6 3 GHz 1.9 GHz 0.5 0.9 GHz 1.0 2.0 5.0 inf 4 GHz 0 0 2.0 0.5 25 5 GHz 0.2 7 5.0 6 GHz Frequency (GHz) 0.5 2.0 1.0 Noise Parameters - VCE=3V, IC=10mA Freq (MH z ) FMIN (dB ) 0.9 0.94 1.9 1.1 2.4 1.18 3 rn GAS(dB ) Gmax (dB ) 0.10 ∠ 55 0.11 23.8 23.88 0.17 ∠ 125 0.10 17.5 19.33 0.23 ∠ 157 0.09 15.4 17.66 1.27 0.23 ∠ 179 0.09 13.2 15.01 4 1.5 0.29 ∠ -150 0.12 11.0 11.94 5 1.73 0.42 ∠ -122 0.18 9.5 9.84 6 2.02 0.55 ∠ -110 0.24 8.4 8.62 726 Palomar Ave., Sunnyvale, CA 94085 Gamma Opt Mag ∠ Ang Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101845 Rev. A Preliminary SGA-8343 Low Noise SiGe HBT Absolute Maximum Ratings Parameter Symbol Value Unit IC 72 mA IB 1 Collector - Emitter Voltage V C EO 5 V Collector - Base Voltage V C BO 12 V Emitter - Base Voltage V EBO 4.5 V C Collector Current Base Current mA Operating Temperature TOP -40 to +85 Storage Temperature Range Tstor -40 to +150 C Power Dissipation PDISS 325 mW TJ +150 C Operating Junction Temperature Part Number Ordering Information Part Number Reel Siz e Devices/Reel SGA-8343 7" 3000 Part Symbolization The part will be symbolized with an “A83” and a Pin 1 indicator on the top surface of the package. Pin Description Pin # Function 1 B a se Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 2 Emitter 3 Collector 4 Emitter Description RF Input Connection to ground. Use via holes to reduce lead inductance. Place vias as close to emitter leads as possible. RF Output Same as Pin 2 Package Dimensions .079 .051±.002 4 .021 3 .025 .049 C L .091 1 CL 2 .015 TYP(4X) .024 .014 .035 .038 NOTE: 1. ALL DIMENSIONS ARE IN INCHES 2. DIMENSIONS ARE INCLUSIVE OF PLATING 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH & METAL BURR 4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70 FOR TRIM/FORM. ie: REVERSE TRIM/FORM 6. PACKAGE SURFACE TO BE MIRROR FINISH .005 TYP(4X) .012 TYP(3X) .024 A fully dimensioned package outline is available on our website. Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101845 Rev. A