ETC SGA-8343

Preliminary
Preliminary
Product Description
Stanford Microdevices’ SGA-8343 is a high performance SiGe
HBT amplifier designed for operation from DC to 6 GHz. This RF
device uses the latest Silicon Germanium Heterostructure Bipolar
Transistor (SiGe HBT) process. The SGA-8343 is optimized
for 3V operation but can be biased at 2V for low-voltage battery
operated systems. The device is easily matched as ΓOPT is
very close to 50 ohms. This device provides high gain, low NF,
and excellent linearity at a low cost.
SGA-8343
Low Noise, High Gain SiGe HBT
Product Features
40
2.4
35
30
2.1
1.8
FMIN
25
20
15
10
Gain
5
0
0
1
1.5
1.2
0.9
0.6
Gmax
2
3
4
5
Frequency (GHz)
FMIN (dB)
Gain, Gmax (dB)
Typical Gain Performance
0.3
0
6
7
• 6 GHz Useful Bandwidth
• Low FMIN:
0.9 dB @ 0.9 GHz
1.1 dB @ 1.9 GHz
• High Gain (Gmax):
24 dB @ 0.9 GHz
19 dB @ 1.9 GHz
• Easily Matched with |ΓOPT| = 0.17 @ 1.9 GHz
• OIP3 = +28.5 dBm, P1dB = +13 dBm
• Low Cost High Performance SiGe HBT
Applications
• LNA for Wireless Infrastructure
8
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
• Oscillators
Symbol
Device Characteristics, T = 25ºC
VCE=3V, ICQ=10mA (unless otherw ise noted)
Units
Min.
Typ.
Maximum Available Gain
ZS=ZS*, ZL=ZL*
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
23.9
19.3
17.7
S 21
Insertion Gain
ZS=ZL=50Ω
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
21.8
16.3
14.3
Fmin
Minimum Noise Figure
ZS=ΓOPT, ZL=ZLOPT
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
0.9
1.1
1.2
P 1dB
Output 1 dB compression point
ZS=ZSOPT, ZL=ZLOPT
VCE=2V, ICQ=20 mA
VCE=3V, ICQ=20 mA
dB m
10.0
13.3
OIP3
Output Third Order Intercept Point
ZS=ZSOPT, ZL=ZLOPT
VCE=2V, ICQ=20 mA
VCE=3V, ICQ=20 mA
dB m
24.0
28.5
GMAX
hFE
DC Current Gain
B V C EO
Collector - Emitter Breakdown Voltage
V
Rth
Thermal Resistance (junction to lead)
ºC/W
120
180
5.7
6.0
Max.
300
200
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101845 Rev. A
Preliminary
SGA-8343 Low Noise SiGe HBT
Typical Performance - Deembedded S-Parameters
-5
-10
25
20
15
10
-15
-20
-25
-30
Isolation
Gmax
Gain
5
0
0
1
2
3
4
-35
-40
5
6
7
8
Gain, Gmax (dB)
35
30
Gain vs Frequency (2V,10mA)
40
35
30
25
20
Isolation
15
10
Gain
5
0
0
1
2
3
-35
-40
4
5
6
7
8
Frequency (GHz)
S11,S22 vs Frequency (2V,10mA)
1.0
1.0
2.0
0.5
2.0
0.5
8 GHz
8 GHz
6 GHz
6 GHz
0.2
0.2
5.0
3 GHz
5.0
4 GHz
4 GHz
0.2
-25
-30
Gmax
Frequency (GHz)
S11,S22 vs Frequency (3V,10mA)
0.0
0
-5
-10
-15
-20
Isolation (dB)
0
Isolation (dB)
Gain, Gmax (dB)
Gain vs Frequency (3V,10mA)
40
3 GHz
0.5
1.0
2.0
5.0
0.0
inf
0.2
0.5
1.0
2.0
5.0
inf
2 GHz
2 GHz
S22
S22
0.2
0.2
5.0
5.0
1 GHz
1 GHz
S11
S11
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z S=Z L=50Ω. The data represents typical performace of the device. Deembedded s-parameters can be downloaded from our website (www.stanfordmicro.com).
Typical Performance - P1dB, OIP3, Gain
Freq
(MH z )
VCE
(V)
2
900
3
2
1900
3
2
2400
3
726 Palomar Ave., Sunnyvale, CA 94085
ICQ
(mA)
P 1d B
(dB m)
OIP 3
(dB m)
Gain
(dB )
ZLOPT
Mag ∠ Ang
0.50 ∠ 143.3
10
10.0
22.0
25.0
20
10.2
24.0
24.0
0.24 ∠ 16.6
10
13.0
24.5
24.4
0.36 ∠ 16.2
20
13.3
28.0
24.4
0.36 ∠ 16.2
10
10.0
23.0
16.7
0.43 ∠ 91.2
20
10.2
26.0
16.4
0.32 ∠ 24.1
10
13.0
26.0
18.0
0.54 ∠ 15.2
20
13.3
28.5
18.0
0.38 ∠ 14.0
10
10.0
23.0
15.0
0.31 ∠ 45.0
20
10.2
24.0
15.0
0.29 ∠ 33.3
10
13.0
27.5
15.3
0.44 ∠ 9.2
20
13.3
29.0
15.3
0.36 ∠ 13.3
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101845 Rev. A
Preliminary
SGA-8343 Low Noise SiGe HBT
Typical Performance - Noise Parameters
Noise Figure (3V, 10mA)
Gamma Opt (3V, 10mA)
2.4
1.0
30
FMIN
2
1.2
15
0.8
10
FMIN (dB)
20
0.2
5.0
2.4 GHz
0.0
GAS
0.4
GAS (dB)
1.6
0.2
5
0
1
2
3
4
5
6
3 GHz
1.9 GHz
0.5
0.9 GHz
1.0
2.0
5.0
inf
4 GHz
0
0
2.0
0.5
25
5 GHz
0.2
7
5.0
6 GHz
Frequency (GHz)
0.5
2.0
1.0
Noise Parameters - VCE=3V, IC=10mA
Freq
(MH z )
FMIN
(dB )
0.9
0.94
1.9
1.1
2.4
1.18
3
rn
GAS(dB )
Gmax
(dB )
0.10 ∠ 55
0.11
23.8
23.88
0.17 ∠ 125
0.10
17.5
19.33
0.23 ∠ 157
0.09
15.4
17.66
1.27
0.23 ∠ 179
0.09
13.2
15.01
4
1.5
0.29 ∠ -150
0.12
11.0
11.94
5
1.73
0.42 ∠ -122
0.18
9.5
9.84
6
2.02
0.55 ∠ -110
0.24
8.4
8.62
726 Palomar Ave., Sunnyvale, CA 94085
Gamma Opt
Mag ∠ Ang
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101845 Rev. A
Preliminary
SGA-8343 Low Noise SiGe HBT
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
IC
72
mA
IB
1
Collector - Emitter Voltage
V C EO
5
V
Collector - Base Voltage
V C BO
12
V
Emitter - Base Voltage
V EBO
4.5
V
C
Collector Current
Base Current
mA
Operating Temperature
TOP
-40 to +85
Storage Temperature Range
Tstor
-40 to +150
C
Power Dissipation
PDISS
325
mW
TJ
+150
C
Operating Junction Temperature
Part Number Ordering Information
Part Number
Reel Siz e
Devices/Reel
SGA-8343
7"
3000
Part Symbolization
The part will be symbolized with an “A83” and a
Pin 1 indicator on the top surface of the package.
Pin Description
Pin #
Function
1
B a se
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
2
Emitter
3
Collector
4
Emitter
Description
RF Input
Connection to ground. Use via holes to reduce lead
inductance. Place vias as close to emitter leads as possible.
RF Output
Same as Pin 2
Package Dimensions
.079
.051±.002
4
.021
3
.025
.049
C
L
.091
1
CL
2
.015 TYP(4X)
.024
.014
.035
.038
NOTE:
1. ALL DIMENSIONS ARE IN INCHES
2. DIMENSIONS ARE INCLUSIVE OF PLATING
3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH &
METAL BURR
4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70 FOR
TRIM/FORM. ie: REVERSE TRIM/FORM
6. PACKAGE SURFACE TO BE MIRROR FINISH
.005 TYP(4X)
.012
TYP(3X)
.024
A fully dimensioned package outline is available on our website.
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101845 Rev. A