Product Description SNA-676 Stanford Microdevices’ SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor (MMIC) housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6.5 GHz. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier These unconditionally stable amplifiers provide 11dB of gain and +18dBm of P1dB when biased at 5.7V and 70mA. This MMIC requires only a single suply voltage. The use of an external resistor allows for bias flexibility and stability. Also available in chip form (SNA-600), its small size (0.4mm x 0.4mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-676 is available in tape and reel at 1000, 3000 and 5000 devices per reel. Output Power vs. Frequency 22 20 Product Features • Cascadable 50 Ohm Gain Block • 11dB Gain, +18dBm P1dB • High Linearity, +36dBm TOIP Typ. • 1.5:1 Input and Output VSWR • Operates From a Single DC Supply • Low Cost Stripline Mount Ceramic Package 16 14 Applications • Narrow and Broadband Linear Amplifiers • Commercial and Industrial Applications 12 0.1 1 2 3 4 5 6 7 8 GHz Electrical Specifications at Ta = 25C Sym bol G P BW 3dB P 1dB NF VSW R IP T 3 D IS O L VD P a r a m e te r s : T e s t C o n d itio n s : Id = 7 0 m A , Z 0 = 5 0 O h m s f = 0 .1 -4 .0 G H z f = 4 .0 -6 .5 G H z S m a ll S ig n a l G a in 3 d B B a n d w id th U n its M in . Ty p . dB dB 9 .0 8 .0 11 .0 9 .0 GHz 6 .5 O u tp u t P o w e r a t 1 d B C o m p re s s io n f = 0 .1 -2 .0 G H z f = 2 .0 -6 .5 G H z dBm 1 8 .0 1 6 .0 N o is e F ig u r e f = 0 .1 -4 .0 G H z f = 4 .0 -6 .5 G H z dB 7 .5 8 .5 In p u t / O u tp u t f = 0 .1 -6 .5 G H z T h i r d O r d e r I n t e r c e p t P o in t f = 0 .1 -2 .0 G H z dBm 3 6 .0 G r o u p D e la y f = 2 .0 G H z psec 120 R e v e r s e Is o la tio n f = 0 .1 -6 .5 G H z D e v ic e V o lta g e M ax. 1 .5 :1 dB V 1 7 .0 4 .8 5 .7 d G /d T D e v i c e G a i n T e m p e r a t u r e C o e ff i c i e n t d B /d e g C -0 .0 0 2 3 d V /d T D e v i c e V o l t a g e T e m p e r a t u r e C o e ff i c i e n t m V /d e g C -5 .0 6 .8 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5-89 http://www.stanfordmicro.com 50 Ohm Gain Blocks 18 dBm SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds = 5.7V, Ids = 70mA) |S11| vs. Frequency |S21| vs. Frequency 12 -5 -10 10 -15 dB dB 8 -20 6 -25 4 -30 0.1 1 2 3 4 5 6 7 0.1 8 1 2 3 0 -5 -5 -10 -10 6 7 8 -15 dB -15 -20 -20 -25 -25 -30 0.1 1 2 3 4 5 6 7 8 0.1 1 2 3 4 5 6 7 8 50 Ohm Gain Blocks GHz GHz TOIP vs. Frequency Noise Figure vs. Frequency 10 38 9 36 34 8 dB 5 |S22| vs. Frequency |S12| vs. Frequency dB 4 GHz GHz dB 7 32 6 30 28 5 0.1 1 2 3 4 5 6 0.1 6.5 1 2 3 GHz 4 5 6 7 8 GHz Typical S-Parameters Vds = 5.7V, Ids = 70mA F req G H z |S 1 1 | S 11 A n g |S 2 1 | S 2 1 A n g |S 1 2 | S 1 2 A n g |S 2 2 | S 2 2 A n g .1 0 0 0 .1 5 2 -1 4 3 .6 2 4 152 0 .0 9 5 -4 0 .1 9 8 -4 .2 5 0 0 .1 4 6 -2 5 3 .6 0 2 145 0 .1 3 9 -1 0 0 .2 0 5 -2 6 .5 0 0 0 .1 3 1 -4 2 3 .5 4 9 140 0 .1 4 9 -3 0 0 .2 4 7 -5 6 1 .0 0 0 .11 0 -8 3 3 .5 8 3 102 0 .1 4 8 -5 9 0 .2 2 2 -11 2 1 .5 0 0 .0 8 5 -1 3 0 3 .5 6 7 59 0 .1 4 6 -9 0 0 .1 9 8 -1 7 9 2 .0 0 0 .0 7 2 178 3 .5 4 1 21 0 .1 4 5 -1 2 0 0 .1 9 3 120 2 .5 0 0 .0 7 7 109 3 .5 1 2 -2 2 0 .1 4 1 -1 5 2 0 .2 0 3 54 3 .0 0 0 .1 0 7 52 3 .4 2 7 -6 4 0 .1 3 6 180 0 .2 2 2 1 3 .5 0 0 .1 4 3 0 3 .4 0 1 -1 0 6 0 .1 3 2 147 0 .2 4 8 -6 0 4 .0 0 0 .1 6 8 -4 4 3 .2 9 0 -1 4 4 0 .1 2 8 11 8 0 .2 7 0 -11 7 4 .5 0 0 .1 7 3 -9 0 3 .2 8 0 175 0 .1 2 4 88 0 .2 8 8 177 5 .0 0 0 .1 4 1 -1 4 2 3 .1 0 4 128 0 .1 2 4 60 0 .2 8 5 11 7 5 .5 0 0 .0 7 9 169 2 .9 2 9 87 0 .1 2 3 29 0 .2 7 6 51 6 .0 0 0 .0 3 8 62 2 .6 5 8 47 0 .1 2 1 0 0 .2 5 9 -1 0 0 .0 7 9 -5 7 2 .3 5 9 1 0 .11 9 -3 5 0 .3 2 2 -7 6 6 .5 0 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5-90 http://www.stanfordmicro.com SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier Part Number Ordering Information Absolute Maximum Ratings A b s o lu te M a xim u m P a r am e te r D e vic e Cu rren t Part Number Devices Per Reel Reel Size SNA-676-TR1 1000 7" 11 0m A Po w e r D is sip a tio n 7 00 m W SNA-676-TR2 3000 13" R F In pu t P ow e r 2 00 m W SNA-676-TR3 5000 13" Ju n ctio n Tem p era tu re +2 0 0 C O p e ratin g Te m p e ra tu re -4 5 C to +8 5C Sto ra g e Te m p e ra ture -6 5 C to +1 50 C R e c o m m e n d e d B ia s R e s is to r Va lu e s Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. Supply Voltage(Vs) 5V 7.5V 9V 12V 15V 20V R bias (O hm s) * 24 46 89 131 203 ** Not Recommended MTTF vs. Temperature @ Id = 70mA Junction Temperature MTTF (hrs) +55C +155C 1000000 +90C +190C 100000 +120C +220C 10000 Thermal Resistance (Lead-Junction): 250° C/W Typical Biasing Configuration Pin Designation 1 RF in 2 GND 3 RF out and Bias 4 GND Typical Performance at 25° C Power Gain vs. Device Current 20mA Steps Device Voltage vs. Id 12.0 7 11.5 dB 80mA 11.0 10.5 10.0 6.5 Vdc 40mA 6 9.5 9.0 8.5 8.0 5.5 5 0.1 1.0 2.0 3.0 4.0 5.0 6.0 50 GHz 522 Almanor Ave., Sunnyvale, CA 94086 55 60 65 70 75 80 mA Phone: (800) SMI-MMIC 5-91 http://www.stanfordmicro.com 50 Ohm Gain Blocks Lead Temperature