STANFORD SNA-676-TR2

Product Description
SNA-676
Stanford Microdevices’ SNA-676 is a high-performance
GaAs Heterojunction Bipolar Transistor (MMIC) housed in a
low-cost surface mountable stripline package. A Darlington
configuration is utilized for broadband performance to 6.5
GHz.
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
These unconditionally stable amplifiers provide 11dB of gain
and +18dBm of P1dB when biased at 5.7V and 70mA. This
MMIC requires only a single suply voltage. The use of an
external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm
x 0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Output Power vs. Frequency
22
20
Product Features
• Cascadable 50 Ohm Gain Block
• 11dB Gain, +18dBm P1dB
• High Linearity, +36dBm TOIP Typ.
• 1.5:1 Input and Output VSWR
• Operates From a Single DC Supply
• Low Cost Stripline Mount Ceramic Package
16
14
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial and Industrial Applications
12
0.1
1
2
3
4
5
6
7
8
GHz
Electrical Specifications at Ta = 25C
Sym bol
G
P
BW 3dB
P
1dB
NF
VSW R
IP
T
3
D
IS O L
VD
P a r a m e te r s : T e s t C o n d itio n s :
Id = 7 0 m A , Z 0 = 5 0 O h m s
f = 0 .1 -4 .0 G H z
f = 4 .0 -6 .5 G H z
S m a ll S ig n a l G a in
3 d B B a n d w id th
U n its
M in .
Ty p .
dB
dB
9 .0
8 .0
11 .0
9 .0
GHz
6 .5
O u tp u t P o w e r a t 1 d B C o m p re s s io n
f = 0 .1 -2 .0 G H z
f = 2 .0 -6 .5 G H z
dBm
1 8 .0
1 6 .0
N o is e F ig u r e
f = 0 .1 -4 .0 G H z
f = 4 .0 -6 .5 G H z
dB
7 .5
8 .5
In p u t / O u tp u t
f = 0 .1 -6 .5 G H z
T h i r d O r d e r I n t e r c e p t P o in t
f = 0 .1 -2 .0 G H z
dBm
3 6 .0
G r o u p D e la y
f = 2 .0 G H z
psec
120
R e v e r s e Is o la tio n
f = 0 .1 -6 .5 G H z
D e v ic e V o lta g e
M ax.
1 .5 :1
dB
V
1 7 .0
4 .8
5 .7
d G /d T
D e v i c e G a i n T e m p e r a t u r e C o e ff i c i e n t
d B /d e g C
-0 .0 0 2 3
d V /d T
D e v i c e V o l t a g e T e m p e r a t u r e C o e ff i c i e n t
m V /d e g C
-5 .0
6 .8
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5-89
http://www.stanfordmicro.com
50 Ohm Gain Blocks
18
dBm
SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds = 5.7V, Ids = 70mA)
|S11| vs. Frequency
|S21| vs. Frequency
12
-5
-10
10
-15
dB
dB
8
-20
6
-25
4
-30
0.1
1
2
3
4
5
6
7
0.1
8
1
2
3
0
-5
-5
-10
-10
6
7
8
-15
dB
-15
-20
-20
-25
-25
-30
0.1
1
2
3
4
5
6
7
8
0.1
1
2
3
4
5
6
7
8
50 Ohm Gain Blocks
GHz
GHz
TOIP vs. Frequency
Noise Figure vs. Frequency
10
38
9
36
34
8
dB
5
|S22| vs. Frequency
|S12| vs. Frequency
dB
4
GHz
GHz
dB
7
32
6
30
28
5
0.1
1
2
3
4
5
6
0.1
6.5
1
2
3
GHz
4
5
6
7
8
GHz
Typical S-Parameters Vds = 5.7V, Ids = 70mA
F req
G H z
|S 1 1 |
S 11
A n g
|S 2 1 |
S 2 1
A n g
|S 1 2 |
S 1 2
A n g
|S 2 2 |
S 2 2
A n g
.1 0 0
0 .1 5 2
-1 4
3 .6 2 4
152
0 .0 9 5
-4
0 .1 9 8
-4
.2 5 0
0 .1 4 6
-2 5
3 .6 0 2
145
0 .1 3 9
-1 0
0 .2 0 5
-2 6
.5 0 0
0 .1 3 1
-4 2
3 .5 4 9
140
0 .1 4 9
-3 0
0 .2 4 7
-5 6
1 .0 0
0 .11 0
-8 3
3 .5 8 3
102
0 .1 4 8
-5 9
0 .2 2 2
-11 2
1 .5 0
0 .0 8 5
-1 3 0
3 .5 6 7
59
0 .1 4 6
-9 0
0 .1 9 8
-1 7 9
2 .0 0
0 .0 7 2
178
3 .5 4 1
21
0 .1 4 5
-1 2 0
0 .1 9 3
120
2 .5 0
0 .0 7 7
109
3 .5 1 2
-2 2
0 .1 4 1
-1 5 2
0 .2 0 3
54
3 .0 0
0 .1 0 7
52
3 .4 2 7
-6 4
0 .1 3 6
180
0 .2 2 2
1
3 .5 0
0 .1 4 3
0
3 .4 0 1
-1 0 6
0 .1 3 2
147
0 .2 4 8
-6 0
4 .0 0
0 .1 6 8
-4 4
3 .2 9 0
-1 4 4
0 .1 2 8
11 8
0 .2 7 0
-11 7
4 .5 0
0 .1 7 3
-9 0
3 .2 8 0
175
0 .1 2 4
88
0 .2 8 8
177
5 .0 0
0 .1 4 1
-1 4 2
3 .1 0 4
128
0 .1 2 4
60
0 .2 8 5
11 7
5 .5 0
0 .0 7 9
169
2 .9 2 9
87
0 .1 2 3
29
0 .2 7 6
51
6 .0 0
0 .0 3 8
62
2 .6 5 8
47
0 .1 2 1
0
0 .2 5 9
-1 0
0 .0 7 9
-5 7
2 .3 5 9
1
0 .11 9
-3 5
0 .3 2 2
-7 6
6 .5 0
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5-90
http://www.stanfordmicro.com
SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
Part Number Ordering Information
Absolute Maximum Ratings
A b s o lu te
M a xim u m
P a r am e te r
D e vic e Cu rren t
Part Number
Devices Per Reel
Reel Size
SNA-676-TR1
1000
7"
11 0m A
Po w e r D is sip a tio n
7 00 m W
SNA-676-TR2
3000
13"
R F In pu t P ow e r
2 00 m W
SNA-676-TR3
5000
13"
Ju n ctio n Tem p era tu re
+2 0 0 C
O p e ratin g Te m p e ra tu re
-4 5 C to +8 5C
Sto ra g e Te m p e ra ture
-6 5 C to +1 50 C
R e c o m m e n d e d B ia s R e s is to r Va lu e s
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Supply
Voltage(Vs)
5V
7.5V
9V
12V
15V
20V
R bias (O hm s)
*
24
46
89
131
203
** Not Recommended
MTTF vs. Temperature @ Id = 70mA
Junction
Temperature
MTTF (hrs)
+55C
+155C
1000000
+90C
+190C
100000
+120C
+220C
10000
Thermal Resistance (Lead-Junction): 250° C/W
Typical Biasing Configuration
Pin Designation
1
RF in
2
GND
3
RF out
and Bias
4
GND
Typical Performance at 25° C
Power Gain vs. Device Current
20mA Steps
Device Voltage vs. Id
12.0
7
11.5
dB
80mA
11.0
10.5
10.0
6.5
Vdc
40mA
6
9.5
9.0
8.5
8.0
5.5
5
0.1
1.0
2.0
3.0
4.0
5.0
6.0
50
GHz
522 Almanor Ave., Sunnyvale, CA 94086
55
60
65
70
75
80
mA
Phone: (800) SMI-MMIC
5-91
http://www.stanfordmicro.com
50 Ohm Gain Blocks
Lead Temperature