STANFORD SLN-186-TR3

Product Description
SLN-186
Stanford Microdevices’ SLN-186 is a high performance
gallium arsenide heterojunction bipolar transistor MMIC
housed in a low-cost surface mount plastic package. A
Darlington configuration is used for broadband performance
from DC-4.0 GHz.
DC-4.0 GHz, 3.5 Volt
50 Ohm LNA MMIC Amplifier
The SLN-186 needs only 2 DC-blocking capacitors and a
bias resistor for operation. Noise figure may be optimized by
using 2-element matching at the input to yield <2.0dB noise
figure.
This 50 Ohm LNA requires only a single supply voltage and
draws only 8mA. For broadband applications, it may be
biased at 6mA with minimal effect on noise figure and gain.
The SLN-186 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Product Features
• Patented, Reliable GaAs HBT Technology
• Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz
• High Associated Gain: 22dB Typ. at 2.0 GHz
• True 50 Ohm MMIC : No External Matching
Required
Noise Figure vs. Frequency
3
2.5
6 mA
dB
Applications
• AMPS, PCS, DECT, Handsets
• Tri-Band & Broadband Receivers
2
8 mA
1.5
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
Electrical Specifications at Ta = 25C
S ym b ol
P a r a m e t e r s : T e s t C o n d i t io n s
NF
50 Ohm
N o is e F ig u re in 5 0 O h m s :
V d s = 3 .5 V, I d s = 8 m A
f = D C -1 .5 G H z
f = 1 . 5 - 4 .0 G H z
dB
dB
5 0 O h m G a in :
V d s = 3 .5 V, I d s = 8 m A
f = D C -1 .5 G H z
f = 1 . 5 - 4 .0 G H z
dB
5 0 O h m M a t c h (In p u t a n d O u tp u t) :
V d s = 3 .5 V, I d s = 8 m A
f = D C -1 .5 G H z
f = 1 . 5 - 4 .0 G H z
-
1 .8 :1
3 .0 :1
N o is e F ig u re in 5 0 O h m s :
V d s = 3 .2 V, I d s = 6 m A
f = D C -1 .5 G H z
f = 1 . 5 - 4 .0 G H z
dB
dB
2 .2
2 .6
5 0 O h m G a in :
V d s = 3 .2 V, I d s = 6 m A
f = D C -1 .5 G H z
f = 1 . 5 - 4 .0 G H z
dB
5 0 O h m M a t c h (In p u t a n d O u tp u t) :
V d s = 3 .2 V, I d s = 6 m A
f = D C -1 .5 G H z
f = 1 . 5 - 4 .0 G H z
-
1 .4 :1
2 .5 :1
O u t p u t P o w e r a t 1 d B C o m p re s s io n :
f = D C -1 .5 G H z
V d = 3 .5 V, Id = 8 m A
V d = 3 .2 V, Id = 6 m A
dBm
dBm
-1 0
-1 2
T h ir d O r d e r In t e r c e p t P o in t:
f = D C -1 .5 G H z
V d = 3 .5 V, Id = 8 m A
V d = 3 .2 V, Id = 6 m A
dBm
+5
+3
S 21
VSW R
NF
50 Ohm
S 21
VSW R
P 1dB
IP 3
U n its
M in .
19
14
Ty p .
M ax.
2 .0
2 .4
2 .4
22
20
2 .5
17
16
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
4-9
http://www.stanfordmicro.com
Low Noise MMICs
• Low Current Draw : Only 8mA
• Low Cost Surface Mount Plastic Package
SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Typical Performance at 25° C (Vds = 3.5V, Ids = 8mA)
|S11| vs. Frequency
|S21| vs. Frequency
0
30
-5
25
8mA
dB
dB
-10
20
6mA
-15
15
10
-20
0.1
0.5
1
1.5
2
2.5
3
3.5
0.1
4
0.5
1
1.5
GHz
0
0
-10
-10
dB
-20
3
4
3.5
4
-20
-40
-40
Low Noise MMICs
3.5
-30
-30
0.1
2.5
|S22| vs. Frequency
|S12| vs. Frequency
dB
2
GHz
0.5
1
1.5
2
2.5
3
3.5
0.1
4
0.5
1
1.5
2
2.5
3
GHz
GHz
Pout & TOIP vs. Frequency
12
8
TOIP
4
dBm
0
-4
-8
-12
Pout
-16
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
Typical S-Parameters Vds = 3.5V, Ids = 8mA
F re q G H z
|S 11 |
.1 0 0
0 .0 9 2
.2 5 0
0 .0 6 8
.5 0 0
0 .0 6 7
1 .0 0
0 .1 2 5
1 .5 0
2 .0 0
S 11 A n g
|S 2 1 |
S21 Ang
|S 1 2 |
S12 Ang
|S 2 2 |
S22 Ang
122
11 .6 9
-1 2
.0 8 0
-11
.0 4 4
35
-1 5 4
11 .9 9
-4
.0 5 3
5
.0 8 9
-2 2
-1 5 3
1 2 .3 2
-1 3
.0 4 2
16
.0 9 1
-4 6
-1 6 0
1 3 .0 3
-3 9
.0 4 0
29
.1 2 3
-11 2
0 .2 1 5
152
1 4 .0 7
-7 2
.0 4 8
45
.2 4 5
169
0 .3 0 9
90
1 5 .11
-1 3 8
.0 4 5
31
.3 9 4
86
2 .5 0
0 .4 2 3
36
1 5 .2 0
-1 7 3
.0 5 6
14
.4 2 1
12
3 .0 0
0 .5 1 3
8
1 3 .1 8
152
.0 5 9
14
.4 4 5
-2 6
3 .5 0
0 .5 0 9
-1 4
1 0 .4 7
138
.0 6 1
17
.4 4 4
-5 1
4 .0 0
0 .4 9 1
-2 0
8 .8 9
125
.0 7 5
20
.4 6 8
-7 1
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
4-10
http://www.stanfordmicro.com
SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Part Number Ordering Information
Absolute Maximum Ratings
P a r a m ete r
D e vic e C urre nt
A b s o lu te
M a xim u m
Part Number
Devices Per Reel
SLN-186-TR1
1000
Reel Size
7"
SLN-186-TR2
3000
13"
SLN-186-TR3
5000
13"
50mA
Po w e r D issipa tion
4 4 0m W
R F In p ut Po w er
1 0 0m W
Ju n ction Te m p e ra ture
+2 0 0 C
O p e ra tin g Te m p e ra tu re
-4 5 C to +8 5 C
Sto ra g e Te m pe ra tu re
-6 5 C to +1 5 0 C
Recommended Bias Resistor Values
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Supply Voltage(Vs)
3.3V
5V
7.5V
9V
12V
15V
20V
Rbias (Ohms)
@ 8mA
*
188
500
688
1063
1438
2063
Rbias (Ohms)
@ 6mA
*
300
717
967
1467
1967
2800
* Needs active biasing for constant current source
Pin
Function
1
RF Input
2
Ground
3
RF Output
and Bias
4
Ground
Typical Biasing Configuration
Device Outline
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
4-11
http://www.stanfordmicro.com
Low Noise MMICs
Device Pinout