Preliminary Product Description Stanford Microdevices SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-7489 requires only DC blocking and bypass capacitors and a bias inductor for external components. Frequency performance may be extended using the 2 GHz application circuit shown on sheet 5. S21 vs. Frequency, T=+25C, Id =130 mA 25 S21 (dB) 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 Frequency (MHz) Sy mbol SGA-7489 DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features DC-3000 MHz Operation Single Voltage Supply High Output Intercept: +36 dBm typ. at 850 MHz Low Noise Figure: 2.9 dB typ. at 850 MHz Applications Oscillator Amplifiers PA for Low / Medium Power Applications IF/ RF Buffer Amplifier Drivers for CATV Amplifiers LO Driver Amplifier Parameters: Test Conditions: Z0 = 50 Ohms, ID = 130 mA, T = 25oC Units Min. Ty p. Max. Notes P1dB Output Pow er at 1dB Compression f f f f = = = = 100 MHz 500 MHz 850 MHz 1950 MHz * dBm dBm dBm dBm 22.8 22.6 22.4 20.3* * Using 2 GHz App.Ckt. (sheet 5) IP3 Third Order Intercept Point Pow er out per tone = 0 dBm f f f f = = = = 100 MHz 500 MHz 850 MHz 1950 MHz * dBm dBm dBm dBm 38.6 37.2 36.0 35.7* * Using 2 GHz App.Ckt. (sheet 5) S21 Small Signal Gain f f f f = = = = 100 MHz 500 MHz 850 MHz 1950 MHz * dB dB dB dB 23.7 23.0 22.0 18.3* * Using 2 GHz App.Ckt. (sheet 5) MHz 3000 11.8 Bandw idth (Determined by S11, S22 Values) S11 Input Return Loss f = DC-3000 MHz dB S22 Output Return Loss f = DC-3000 MHz dB 9.3 S12 Reverse Isolation f f f f dB dB dB dB 25.8 25.8 25.4 22.7* NF Noise Figure, ZS = 50 Ohms f = 850 MHz dB 2.9 VD Device Voltage V 5.0 C/W 82 Rth,j-l = = = = 100 MHz 500 MHz 850 MHz 1950 MHz * Thermal Resistance (junction - lead) o * Using 2 GHz App.Ckt. (sheet 5) The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Supply Current Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l Value Unit 160 (approx.) mA Operating Temperature -40 to +85 C Maximum Input Pow er +10 dBm -40 to +150 C +150 C Storage Temperature Range Operating Junction Temperature Key parameters, at typical operating frequencies: Parameter Ty pical Test Condition 25 C Unit 100 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 23.7 2.7 38.6 22.8 15.0 25.8 dB dB dBm dBm dB dB 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 23.0 2.7 37.2 22.6 16.2 25.8 dB dB dBm dBm dB dB 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 22.0 2.9 36.0 22.4 17.3 25.4 dB dB dBm dBm dB dB 1950 MHz Gain Noise Figure Output IP3 * Output P1dB * Input Return Loss Reverse Isolation 18.2 --33.3 19.9 15.5 22.9 dB dB dBm dBm dB dB 2400 MHz Gain Noise Figure Output IP3 * Output P1dB * Input Return Loss Reverse Isolation 16.9 --31.9 18.9 13.8 21.7 dB dB dBm dBm dB dB o (ID = 130 mA, unless otherwise noted) ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm * NOTE: P1dB and IP3 @1950,2400 MHz may be improved by using the tuned circuit shown on sheet 5 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier Pin # 1 2 3 4 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF OUT/Vcc RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias netw ork should be w ell bypassed. GND Same as Pin 2. Device Schematic Application Circuit Component Description Recommended Bias Resistor Values Supply Voltage(Vs) 7V 8V 9V Rbias (Ohms) 15 22 30 Pow er Rating (W) 0.5 0.5 1.0 Choose circuit components such that the following conditions are met at the minimum operational frequency : Bias Inductor XLb >= 250 Ohms Input / Output Coupling Capacitors XCc <= 10 Ohms Decoupling Capacitors XCd <= 1 Ohm +Vs Rbias Cd Lb Cc1 RF input Cc2 SGA-7489 RF Output SGA-7489 Basic Application Circuit 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier S-Parameter Data @ -40C,+25C,+85C ,Id =130 mA S11 v s. Freq. @-40C,+25C,+85C 0 24 -5 18 S21(-40C) S21(+25C) 12 S21(+85C) S11(dB) S21(dB) S21 v s. Freq. @-40C,+25C,+85C 30 6 -10 S11(-40C S11(+25 -15 S11(+85 -20 0 -25 0 500 1000 1500 2000 2500 3000 0 500 1000 Frequency (MHz) S12 v s. Freq. @-40C,+25C,+85C 2000 2500 3000 S22 v s. Freq. @-40C,+25C,+85C 0 -6 -8 -12 S12(-40C) S12(+25C) -18 S12(+85C) S22(dB) 0 -24 -16 S22(-40C S22(+25 -24 S22(+85 -32 -30 -40 0 500 1000 1500 2000 2500 3000 0 500 Frequency (M Hz) 1000 1500 2000 2500 3000 Frequency (M Hz) P1dB & IP3 vs. Frequency @ 3 Temps. Id= 130 mA 45 IP3 40 Level (dBm) S12(dB) 1500 Frequency (MHz) 35 P1dB(-40C) P1dB(+25C) P1dB(+85C) IP3(-40C) IP3(+25C) IP3(+85C) 30 P1dB 25 20 15 10 0 100 200 300 400 500 600 700 800 900 Frequency (MHz) 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier 2 GHz Application Ckt. Board +Vcc The SGA-7489 may be tuned in the manner shown below for operation at 2 GHz. Ground Rb1 Component Parts List Rb2 Cd2 SGA-7489 Cd1 Lb CM1 Cc1 CM2 IN Cc1 OUT STANFORD MICRODEVICES ECB-100607 Rev-A SOT-89 Eval Board Component Ty pe Value Manufacturer P/N Cc1,Cc2, Cd1 100 pF ROHM CM1 1.2 pF ROHM MCH185A1R2JK CM2 1.5 pF ROHM MCH185A1R5JK Cd2 0.1 uF ROHM MCH182FN1042K Lb 22 nH TOKO LL1608FS22NJ Rb1,Rb2 30 Ohms, 1/4 W ROHM Type MRC 18 Table of Delay Elements Ref. Desig. +7V Rb2 Rb1 Cd1 Lb Z1 Cc2 Z2 Z3 SGA-7489 Zo (Ohms) Phase Delay @ 2 GHz (Degrees) Z1 50 14.5 Z2 50 34.1 Z3 50 21.5 Cd2 Cc1 RF input MCH185A101JK RF Output CM2 CM1 Note: Separation Distance between via holes on board represents approx. 5.4 Degrees phase shift @ 2GHz for equivalent distance on microstrip. Board material is GETEK,e=4.1 SGA-7489 2 GHz Application Circuit SGA-7489 2 GH z Tuned Application C kt. Summary D ata Table Parameter Ty pical Test Condition o 25 C Unit 1700 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 18.6 3.1 36.1 20.8 10.0 23.8 dB dB dBm dBm dB dB 1900 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 18.3 3.3 36.0 20.4 11.2 23.0 dB dB dBm dBm dB dB 2100 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 18.2 3.7 34.5 19.9 16.3 22.1 dB dB dBm dBm dB dB 726 Palomar Ave., Sunnyvale, CA 94085 (ID = 130 mA, unless otherwise noted) ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier Gain v s. Frequency for 2GHz Tuned Circuit, Id = 130 mA, T=+25C P1dB & IP3 v s. Frequency for 2GHz Tuned Circuit, Id =130 mA, T=+25C 25 40 35 Level (dBm) Gain (dB) 20 15 10 5 IP3 30 25 20 P1dB 15 10 5 0 0 500 1000 1500 2000 2500 3000 500 1000 Frequency (M Hz) 1500 2000 2500 3000 Frequency (M Hz) S-Parameter Data for 2 GHz Tuned Application Circuit S11 v s. Frequency , Id =130 mA, T=+25C 0 20 -6 S11(dB) S21(dB) S21 v s. Frequency , Id =130 mA, T=+25C 25 15 10 5 -12 -18 -24 0 -30 0 500 1000 1500 2000 2500 3000 0 500 Frequency (M Hz) 1500 2000 2500 300 Frequency (M Hz) S12 v s. Frequency , Id =130 mA, T=+25C S22 v s. Frequency , Id =130 mA, T=+25C 0 0 -10 -8 S22(dB) S12(dB) 1000 -20 -30 -40 -16 -24 -32 -50 -40 0 500 1000 1500 2000 2500 3000 Frequency (M Hz) 726 Palomar Ave., Sunnyvale, CA 94085 0 500 1000 1500 2000 2500 Frequency (M Hz) Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101801 Rev A 300 Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier Noise Figure vs. Frequency for SGA-7489 2GHz Tuned Circuit ,Id=130 mA, T=+25C 10 NF (dB) 8 6 4 2 0 1000 1500 2000 2500 3000 Frequency (MHz) Id vs. Vd Variation over Temperature for Vs=7 Volts and Rbias = 15 Ohms for SGA-7489 180 Pd max(T j=150C) =790mW Id (mA) 160 +85C 140 120 -40C 100 80 4.5 4.6 4.7 4.8 4.9 5 5.1 Vd (Volts) 5.2 5.3 5.4 5.5 Plot of Vd vs. Temp. @ Id =130 mA (no signal) 5.3 Vd (Volts) 5.2 5.1 5.0 4.9 4.8 4.7 4.6 -50 -30 -10 10 30 50 70 90 Temperature (Deg. C) 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part N umber R eel Siz e D ev ices/R eel SGA-7489 13" 3000 Part Symbolization The part will be symbolized with A74 designator on the top surface of the package. Package Dimensions Pin # Functi on 1 RFi n 2 Gnd 3 RFout/Vcc 4 Gnd 4 1 A74 2 3 PCB Pad Layout DIMENSIONS ARE IN INCHES [MM] 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EDS-101801 Rev A