Preliminary Product Description SGA-5589 Stanford Microdevices’ SGA-5589 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.9V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-5589 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency 30 dB 25 20 15 10 0 1 2 3 4 Frequency GHz Symbol 5 6 Product Features • DC-4000 MHz Operation • Single Voltage Supply • High Output Intercept: +33 dBm typ. at 850 MHz • Low Current Draw: 60mA at 3.9V typ. • Low Noise Figure: 3dB typ. at 850 MHz Applications • Oscillator Amplifiers • PA for Low Power Applications • IF/ RF Buffer Amplifier • Drivers for CATV Amplifiers Parameters: Test Conditions: Z0 = 50 Ohms, ID = 60 mA, T = 25oC Units Min. Typ. Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 18.2 16.2 15.1 IP3 Third Order Intercept Point Power out per tone = 0 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 32.9 29.2 27.7 S 21 Small Signal Gain f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 24.1 20.8 19.5 MHz 4000 P 1dB Bandwidth (Determined by S11, S22 Values) Max. S11 Input VSWR f = DC-4000 MHz - 1.6:1 S 22 Output VSWR f = DC-4000 MHz - 1.6:1 S 12 Reverse Isolation f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 27.3 25.5 24.1 NF Noise Figure, ZS = 50 Ohms f = 1950 MHz dB 3.4 VD Device Voltage V 3.9 C/W 97 Rth,j-l Thermal Resistance (junction - lead) o The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101443 Rev A Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Supply Current Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l Value Unit 120 mA Operating Temperature -40 to +85 C Maximum Input Power +5 dB m -40 to +150 C +150 C Storage Temperature Range Operating Junction Temperature Key parameters, at typical operating frequencies: Typical Parameter Test Condition o 25 C Unit 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 24.9 2.8 31.6 17.9 20.0 27.2 dB dB dB m dB m dB dB 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 24.1 3.0 32.9 18.2 16.9 27.3 dB dB dB m dB m dB dB 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 20.8 3.4 29.2 16.2 13.2 25.5 dB dB dB m dB m dB dB 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 19.5 3.6 27.7 15.1 12.5 24.1 dB dB dB m dB m dB dB 522 Almanor Ave., Sunnyvale, CA 94085 (ID = 60 mA, unless otherw ise noted) ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101443 Rev A Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier Pin # 1 2 3 4 Function RF IN Description Device Schematic RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF OUT/Vcc RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. GND Same as Pin 2. Application Schematic for Operation at 850 MHz Recommended Bias Resistor Values Supply Voltage(Vs) 5V 7.5V 9V 12V Rbias (Ohms) 18 62 82 130 1uF 68pF Rbias VS For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 50 ohm microstrip 2 1 3 100pF 100pF 4 Application Schematic for Operation at 1950 MHz 1uF 22pF Rbias VS 22nH 50 ohm microstrip 50 ohm microstrip 2 1 3 68pF 522 Almanor Ave., Sunnyvale, CA 94085 4 Phone: (800) SMI-MMIC 3 68pF http://www.stanfordmicro.com EDS-101443 Rev A Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier S21, ID = 60 mA, T = +25C dB S12, ID = 60 mA, T = +25C 30 -10 25 -15 20 dB -20 15 -25 10 -30 0 1 2 3 4 5 6 0 1 2 3 4 5 6 5 6 Frequency GHz Frequency GHz S11, ID = 60 mA, T = +25C S22, ID = 60 mA, T = +25C 0 0 -10 -10 dB dB -20 -20 -30 -30 0 1 2 3 4 5 6 Frequency GHz 0 1 2 3 4 Frequency GHz S22, ID=60mA, Ta=25C S11, ID=60mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101443 Rev A Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier S21, ID = 60 mA, T = -40C 30 S12, ID = 60 mA, T = -40C -10 25 -15 dB dB 20 15 -20 -25 10 -30 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Frequency GHz Frequency GHz S11, ID = 60 mA, T = -40C S22, ID = 60 mA, T = -40C 0 0 -10 -10 dB dB -20 -20 -30 -30 -40 0 1 2 3 4 5 6 0 1 2 3 4 6 S22, ID = 60 mA, T = -40C S11, ID = 60 mA, T = -40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94085 5 Frequency GHz Frequency GHz Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101443 Rev A Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier S21, ID = 60 mA, T = +85C S12, ID = 60 mA, T = +85C 30 -10 25 -15 dB dB 20 15 -20 -25 10 -30 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Frequency GHz Frequency GHz S11, ID = 60 mA, T = +85C S22, ID = 60 mA, T = +85C 0 0 -10 -10 dB dB -20 -20 -30 -30 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Frequency GHz Frequency GHz S22, ID = 60 mA, T = +85C S11, ID = 60 mA, T = +85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101443 Rev A Preliminary Preliminary SGA-5589 DC-4000 MHz 3.9V SiGe Amplifier Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Reel Siz e Devices/Reel SGA-5589 13" 3000 Part Symbolization The part will be symbolized with “A55” designator on the top surface of the package. Package Dimensions Pi n # Function 1 RFin 2 Gnd 3 RFout/Vcc 4 Gnd 4 A55 1 2 3 PCB Pad Layout DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101443 Rev A