HiPerDynFREDTM Epitaxial Diode IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 600 600 DSEA Type ISOPLUS220TM E153432 2 1 3 DSEC DSEA 16-06BC DSEC 16-06BC G 1 Symbol 2 Conditions TC = 110°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 50 A EAS TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH 0.1 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 260 °C 60 W 2500 V~ 11...65 / 2.5...15 N / lb 2 g TL 1.6 mm (0.063 in) from case for 10 s Ptot TC = 25°C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC mounting force with clip Weight z z z z z z z z z Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM z z TVJ = 150°C TVJ = 25°C RthJC RthCH trr IRM 60 0.25 µA mA 3.0 V V 1.65 2.5 0.4 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications z IF = 8 A; Isolated back surface Features z TVJ TVJM Tstg VF d S Maximum Ratings A A c D 3 19 8 IFRMS IFAVM DSEA 16-06BC DSEC 16-06BC = 2x8 A = 600 V = 30 ns z z z Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders K/W Advantages K/W Avalanche voltage rated for reliable ns operation Soft reverse recovery for low EMI/RFI Low IRM reduces: A - Power dissipation within the diode - Turn-on loss in the commutating switch z IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C 30 VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C 1.4 z 1.9 Notes: Data given for TVJ = 25OC and per diode unless otherwise specified d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % z IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved DS98825A (04/05) DSEA 16-06BC DSEC 16-06BC 30 250 A nC 25 IF 20 TVJ = 100°C 15 IF = 5 A 150 IF = 10 A 8 IRM Qr IF = 5 A A VR = 300 V 200 TVJ = 150°C 10 TVJ = 100°C IF = 20 A 6 IF = 10 A IF = 20 A 100 4 50 2 TVJ = 100°C 10 5 0 TVJ = 25°C 0 1 2 3 0 100 V VF Fig. 1. Forward current IF versus VF Fig. 2. Reverse recovery charge Qr versus -diF/dt 2.0 ns VR = 300 V 400 600 A/µs 800 1000 -diF/dt 0.3 TVJ = 100°C µs IF = 10 A VFR 40 IF = 5 A 80 tfr 0.2 IF = 10 A 1.0 IF = 20 A IRM 60 20 tfr VFR 0.5 Qr 0.0 200 Fig. 3. Peak reverse current IRM versus -diF/dt V trr Kf 0 60 TVJ = 100°C 100 1.5 0 A/µs 1000 -diF/dt VR = 300 V 0 40 0.1 40 80 120 C 160 0 200 TVJ 400 600 800 1000 A/µs 0 0 200 400 -diF/dt Fig. 4. Dynamic parameters Qr, IRM versus TVJ Fig. 5. Recovery time trr versus -diF/dt 10 0.0 600 A/µs 800 1000 diF/dt Fig. 6. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.4931 0.0052 0.0003 0.0169 0.1 0.01 0.001 0.00001 DSEP 8-06B 0.0001 0.001 0.01 Fig. 7. Transient thermal resistance junction-to-case © 2005 IXYS All rights reserved 0.1 s t 1 NOTE: Fig. 2 to Fig. 6 shows typical values DSEA 16-06BC DSEC 16-06BC ISOPLUS220 OUTLINE ISOPLUS220 Outline Notes: 1. All terminals are tin plated. 2. Back surface (4) is electrically isolated from pins 1,2 and 3. Pin connections: DSEA: 1 - Cathode 2 - Anode 3 - Cathode DSEC: 1 -Anode 2 - Cathode 3 - Anode © 2005 IXYS All rights reserved