IXYS DSEC16-06BC

HiPerDynFREDTM Epitaxial Diode
IFAV
VRRM
trr
ISOPLUS220TM
Electrically Isolated Back Surface
Preliminary Data Sheet
VRSM
VRRM
V
V
600
600
600
600
DSEA
Type
ISOPLUS220TM
E153432
2
1
3
DSEC
DSEA 16-06BC
DSEC 16-06BC
G
1
Symbol
2
Conditions
TC = 110°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
50
A
EAS
TVJ = 25°C; non-repetitive
IAS = 0.9 A; L = 180 µH
0.1
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
-55...+175
175
-55...+150
°C
°C
°C
260
°C
60
W
2500
V~
11...65 / 2.5...15
N / lb
2
g
TL
1.6 mm (0.063 in) from case for 10 s
Ptot
TC = 25°C
VISOL
50/60 Hz RMS; IISOL ≤ 1 mA
FC
mounting force with clip
Weight
z
z
z
z
z
z
z
z
z
Symbol
Conditions
Characteristic Values
typ.
max.
IR
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
z
z
TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
trr
IRM
60
0.25
µA
mA
3.0
V
V
1.65
2.5
0.4
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
z
IF = 8 A;
Isolated back surface
Features
z
TVJ
TVJM
Tstg
VF d
S
Maximum Ratings
A
A
c
D
3
19
8
IFRMS
IFAVM
DSEA 16-06BC
DSEC 16-06BC
= 2x8 A
= 600 V
= 30 ns
z
z
z
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
K/W Advantages
K/W
Avalanche voltage rated for reliable
ns
operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
A
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
z
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V; TVJ = 25°C
30
VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs
TVJ = 100°C
1.4
z
1.9
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
z
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
DS98825A (04/05)
DSEA 16-06BC
DSEC 16-06BC
30
250
A
nC
25
IF
20
TVJ = 100°C
15
IF = 5 A
150
IF = 10 A
8
IRM
Qr
IF = 5 A
A
VR = 300 V
200
TVJ = 150°C
10
TVJ = 100°C
IF = 20 A
6
IF = 10 A
IF = 20 A
100
4
50
2
TVJ = 100°C
10
5
0
TVJ = 25°C
0
1
2
3
0
100
V
VF
Fig. 1. Forward current IF versus VF
Fig. 2. Reverse recovery charge Qr
versus -diF/dt
2.0
ns
VR = 300 V
400
600 A/µs
800 1000
-diF/dt
0.3
TVJ = 100°C
µs
IF = 10 A
VFR
40
IF = 5 A
80
tfr
0.2
IF = 10 A
1.0
IF = 20 A
IRM
60
20
tfr
VFR
0.5
Qr
0.0
200
Fig. 3. Peak reverse current IRM
versus -diF/dt
V
trr
Kf
0
60
TVJ = 100°C
100
1.5
0
A/µs 1000
-diF/dt
VR = 300 V
0
40
0.1
40
80
120 C 160
0
200
TVJ
400
600
800 1000
A/µs
0
0
200
400
-diF/dt
Fig. 4. Dynamic parameters Qr, IRM
versus TVJ
Fig. 5. Recovery time trr versus -diF/dt
10
0.0
600 A/µs
800 1000
diF/dt
Fig. 6. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
K/W
i
1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
1.449
0.5578
0.4931
0.0052
0.0003
0.0169
0.1
0.01
0.001
0.00001
DSEP 8-06B
0.0001
0.001
0.01
Fig. 7. Transient thermal resistance junction-to-case
© 2005 IXYS All rights reserved
0.1
s
t
1
NOTE: Fig. 2 to Fig. 6 shows typical values
DSEA 16-06BC
DSEC 16-06BC
ISOPLUS220 OUTLINE
ISOPLUS220 Outline
Notes:
1. All terminals are tin plated.
2. Back surface (4) is electrically
isolated from pins 1,2 and 3.
Pin connections:
DSEA: 1 - Cathode
2 - Anode
3 - Cathode
DSEC: 1 -Anode
2 - Cathode
3 - Anode
© 2005 IXYS All rights reserved