DSP 8 ADVANCE TECHNICAL INFORMATION Phase-leg Rectifier Diode VRRM = 800/1200 V IF(AV)M = 2 x 11 A ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS220TM VRSM VRRM V V 900 1300 800 1200 1 Type 1 DSP 8-08AC DSP 8-12AC 2 2 3 Isolated back surface * 3 * Patent pending Symbol Test Conditions Maximum Ratings IFRMS IF(AV)M TVJ = TVJM Tcase = 100°C; 180° sine 30 2 x 11 A A IFSM TVJ = 45°C; I 2t t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine 100 105 A A TVJ = 150°C; t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine 85 90 A A TVJ = 45°C (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine 50 45 35 30 A 2s A 2s A 2s A 2s -40...+150 150 -55...+150 °C °C °C 260 °C t = 10 ms t = 8.3 ms TVJ = 150°C; t = 10 ms t = 8.3 ms TVJ TVJM Tstg TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC Mounting Force 2500 Symbol Test Conditions IR Q VR VF R = VRRM; TVJ = 25°C TVJ = 150°C IF = 10 A; TVJ = 25°C TVJ = 125°C VT0 rT For power-loss calculations only TVJ = TVJM RthJC RthCK DC current DC current (with heatsink compound) a Maximum allowable acceleration l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation For single and three phase bridge configuration Low cathode to tab capacitance (<15pF) Planar passivated chips Epoxy meets UL 94V-0 ISOPLUS220 Outline V~ 11...65 / 2.5..15 N/lb 2 g Weight Features Characteristic Values ≤ ≤ 10 0.7 µA mA ≤ ≤ 1.22 1.26 V V 0.8 41 V mΩ 1.8 0.6 K/W K/W 100 m/s2 typ. Notes: Data given for TVJ = 25OC and per diode unless otherwise specified Q Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % RPulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 98820 (04/01)