IXYS DSEA59-06BC

HiPerFREDTM Epitaxial Diode
DSEA 59-06BC
DSEC 59-06BC
= 2x30 A
= 600 V
= 35 ns
IFAV
VRRM
trr
ISOPLUS220TM
Electrically Isolated Back Surface
DSEA
Preliminary Data Sheet
VRSM
VRRM
V
V
600
600
ISOPLUS220TM
E153432
Type
1
DSEC
2
3
2
3
DSEA 59-06BC
DSEC 59-06BC
1
1
Symbol
Conditions
IFRMSc
IFAVM
Lead current limit
TC = 105°C; rectangular, d = 0.5
45
30
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
200
A
EAS
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
0.2
mJ
IAR
VA = 1.5·VR typical; f = 10 kHz; repetitive
0.1
A
-40...+175
175
-40...+150
°C
°C
°C
3
Maximum Ratings
TL
1.6 mm (0.063 in) from case for 10 s
260
°C
Ptot
TC = 25°C
136
W
VISOL
50/60 Hz RMS; IISOL ≤ 1 mA
2500
V~
FC
Mounting force
Weight
typical
Symbol
Conditions
11...65 / 2.5...15 N / lb
2
g
z
z
z
z
z
z
z
IR d
TVJ = 25°C
TVJ = 150°C
VR = VRRM
VR = VRRM
250
2
µA
mA
VF e
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
1.56
2.51
V
V
1.1
0.6
K/W
K/W
ns
RthJC
RthCH
trr
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
30
IRM
VR = 100 V;
TVJ = 100°C
4
IF = 50 A; -diF/dt = 100 A/µs
z
z
z
z
z
z
z
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
c Average current per diode may be limited by center lead RMS current limit when
both diodes are conducting.
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
z
A
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
z
Characteristic Values
typ.
max.
Isolated back surface*
Features
z
TVJ
TVJM
Tstg
© 2003 IXYS All rights reserved
2
z
z
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
See DSEP 29-06B data sheet for
characteristic curves
DS98817A(07/03)
DSEA 59-06BC
DSEC 59-06BC
ISOPLUS220 Outline
Notes:
DSEA 29
1. Lead 1 = Cathode
2. Lead 2 = Common Anode
3. Lead 3 = Cathode
DSEC 29
1. Lead 1 = Anode
2. Lead 2 = Common Cathode
3. Lead 3 = Anode
Back surface 4 is electrically isolated
from leads 1, 2 and 3