HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC 1 1 Symbol Conditions IFRMSc IFAVM Lead current limit TC = 105°C; rectangular, d = 0.5 45 30 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A EAS TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH 0.2 mJ IAR VA = 1.5·VR typical; f = 10 kHz; repetitive 0.1 A -40...+175 175 -40...+150 °C °C °C 3 Maximum Ratings TL 1.6 mm (0.063 in) from case for 10 s 260 °C Ptot TC = 25°C 136 W VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~ FC Mounting force Weight typical Symbol Conditions 11...65 / 2.5...15 N / lb 2 g z z z z z z z IR d TVJ = 25°C TVJ = 150°C VR = VRRM VR = VRRM 250 2 µA mA VF e IF = 30 A; TVJ = 150°C TVJ = 25°C 1.56 2.51 V V 1.1 0.6 K/W K/W ns RthJC RthCH trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 30 IRM VR = 100 V; TVJ = 100°C 4 IF = 50 A; -diF/dt = 100 A/µs z z z z z z z Notes: Data given for TVJ = 25OC and per diode unless otherwise specified c Average current per diode may be limited by center lead RMS current limit when both diodes are conducting. d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages z A Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15pF) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications z Characteristic Values typ. max. Isolated back surface* Features z TVJ TVJM Tstg © 2003 IXYS All rights reserved 2 z z Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch See DSEP 29-06B data sheet for characteristic curves DS98817A(07/03) DSEA 59-06BC DSEC 59-06BC ISOPLUS220 Outline Notes: DSEA 29 1. Lead 1 = Cathode 2. Lead 2 = Common Anode 3. Lead 3 = Cathode DSEC 29 1. Lead 1 = Anode 2. Lead 2 = Common Cathode 3. Lead 3 = Anode Back surface 4 is electrically isolated from leads 1, 2 and 3