DSEP 40-03AS Advanced Technical Information HiPerFREDTM Epitaxial Diode IFAV = 40 A VRRM = 300 V trr = 35 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-263 C (TAB) A A DSEP 40-03AS A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM rect., d = 0.5; TC = 120°C IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = 9 A; L = 100 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive TVJ TVJM Tstg Ptot TC = 25°C Weight typical Symbol Conditions IR ① VF ② 35 40 A A 300 A 4 mJ 0.9 A -40...+175 175 -40...+150 °C °C °C 175 W 2 g Characteristic max. Values VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 150°C 1 100 µA µA IF = 40 A; 1.11 1.42 V V 0.85 K/W 35 ns 3.5 A TVJ = 150°C TVJ = 25°C RthJC trr typ. IRM typ. VR = 100 V; IF = 40 A; -diF/dt = 200 A/µs; TVJ = 25°C Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0% ② Pulse Width = 300 µs, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. Features International standard package • Planar passivated chips • Very short recovery time l Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0528 Dimensions see Outlines.pdf 1-1