DSEC 30-02A HiPerFREDTM Epitaxial Diode IFAV = 2x 15 A VRRM = 200 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V V 200 200 A Type C A TO-247 AD A C A DSEC 30-02A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions IFRMS IFAVM IFAVM TC = 150°C; rectangular, d = 0.5 TC = 115°C; rectangular, d = 0.5 IFSM EAS Maximum Ratings 50 15 30 A A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 140 A TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH 0.8 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C 95 W Features ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.8...1.2 6 Nm g ● ● ● ● Applications ● ● Symbol IR ① VF ② Test Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 100 0.5 µA mA IF = 15 A; 0.85 1.05 V V 1.6 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C 25 IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C 3.5 ns ● ● ● ● ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 4.4 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. 1-2 311 Data according to IEC 60747 and per diode unless otherwise specified © 2003 IXYS All rights reserved DSEC 30-02A 50 700 nC 600 A 30 TVJ = 100°C VR = 100 V Qr TVJ = 150°C 30 IRM 500 400 TVJ = 100°C TVJ = 25°C 300 20 IF = 30 A 20 IF = 15 A IF = 7.5 A 15 10 0.8 1.2 V VF 0 100 1.6 Fig. 1 Forward current IF versus VF 80 trr 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 3 Typ. peak reverse current IRM 40 TVJ = 100°C ns 1.2 D4 0 A/µs 1000 -diF/dt Fig. 2 Typ. reverse recovery charge Qr 1.4 IF = 7.5 A 5 100 0.4 IF = 30 A IF = 15 A 10 200 0 0.0 VR = 100 V 25 40 IF TVJ = 100°C A tfr VFR V VR = 100 V 70 30 VFR IF = 30 A Kf IF = 15 A 60 0.30 0.25 IF = 7.5 A 1.0 20 0.20 TVJ = 100°C 50 IF = 15 A IRM 0.8 0.40 µs 0.35 tfr 10 40 0.15 0.10 0.05 Qr 0.6 0 40 30 80 120 °C 160 0 0 TVJ 200 400 600 A/µs 800 1000 -diF/dt Fig. 4 Typ. dynamic parameters Qr, IRM Fig. 5 Typ. recovery time trr versus -diF/dt 0 200 400 0.00 600 A/µs 800 1000 diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr 10 K/W 1 ZthJC 0.1 0.01 0.001 0.00001 DSEC 30-02A 0.0001 0.001 0.01 s 0.1 1 t 311 Fig. 7 Transient thermal resistance junction to case © 2003 IXYS All rights reserved 2-2