IXYS IXKC13N80C

ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET
ISOPLUS220TM
IXKC 13N80C
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low RDS(on), High Voltage MOSFET
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VGS
Continuous
±20
V
ID25
TC = 25°C; Note 1
13
A
ID90
TC = 90°C, Note 1
9
A
ID(RMS)
Package lead current limit
45
A
EAS
EAR
ID
ID
670
0.5
mJ
mJ
dv/dt
VDS < VDSS, IF ≤ 17 A, TVJ = 150°C
dS/dt = 100 A/µs
PD
TC = 25°C
= 4A, TC = 25°C
= 10A
6
V/ns
125
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +125
°C
300
°C
2500
V~
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
FC
Mounting force
11 ... 65 / 2.4 ...11 N/lb
Weight
2
g
VDSS
= 800 V
ID25
= 13 A
Ω
RDS(on) = 290 mΩ
ISOPLUS 220TM
G
D
S
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l 3RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
l
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
RDS(on)
VGS = 10 V, ID = ID90, Note 3
VGS = 10 V, ID = ID90, Note 3 TJ = 125°C
VGS(th)
VDS = VGS, ID = 1 mA
IDSS
VDS = VDSS
VGS = 0 V
IGSS
VGS = ±20 VDC, VDS = 0
250
550
2
TJ = 25°C
TJ = 125°C
290 mΩ
mΩ
4
V
25
µA
µA
125
±100
nA
Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
l Inductive Heating
l
l
Advantages
l
l
l
Easy assembly: no screws or isolation
foils required
Space savings
High power density
COOLMOS is a trademark of Infineon
Technology.
© 2001 IXYS All rights reserved
98865 (11/01)
IXKC 13N80C
Symbol
Test Conditions
Qg(on)
83
nC
9
nC
Qgd
42
nC
td(on)
25
ns
Qgs
VGS = 10 V, VDS = 640 V, ID = 17 A
tr
VGS = 10 V, VDS = 640V
15
ns
td(off)
ID = 17 A, RG = 4.7 Ω
75
ns
10
ns
tf
RthJC
1.0
RthCH
K/W
0.30
Reverse Conduction
Symbol
Test Conditions
VSD
IF = 6.5 A, VGS = 0 V
Note 3
ISOPLUS220 OUTLINE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1
1.2
V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025